| PART |
Description |
Maker |
| 301U160 301URA240 301URA180 301URA120 301URA250P3 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
1600V 330A Std. Recovery Diode in a DO-205AB (DO-9)package 1600V 330A性病。恢复二极管中的DO - 205AB（请 9）封
AVALANCE DIODE 330A ANODE STUD 雪崩二极30A阳极螺柱
300 A, 2500 V, SILICON, RECTIFIER DIODE, DO-205AB
DIODE 330 A, 1600 V, SILICON, RECTIFIER DIODE, DO-205AB, Rectifier Diode
DIODE 330 A, 2000 V, SILICON, RECTIFIER DIODE, DO-205AB, Rectifier Diode
|
Bourns, Inc.
International Rectifier, Corp.
Vishay Semiconductors
|
| FR1ZZ-TP FR1ZZP FR1020GP |
1 A, 2000 V, SILICON, SIGNAL DIODE, DO-214AA HSMB, 2 PIN
1 Amp Glass Passivated Rectifier 1200 to 2000 Volts 1 A, 2000 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp.
|
| 309URA160 301U200 309URA250 301UA160 301UA200 301U |
2500V 300A Std. Recovery Diode in a DO-205AB (DO-9)package
1600V 330A Std. Recovery Diode in a DO-205AB (DO-9)package
1200V 330A Std. Recovery Diode in a DO-205AB (DO-9)package
2000V 330A Std. Recovery Diode in a DO-205AB (DO-9)package
800V 330A Std. Recovery Diode in a DO-205AB (DO-9)package
From old datasheet system
FILTER CERAMIC 915MHZ SMD
STANDARD RECOVERY DIODES 标准恢复二极
330 A, 1600 V, SILICON, RECTIFIER DIODE, DO-205AB
DIODE 330 A, 2000 V, SILICON, RECTIFIER DIODE, DO-205AB, Rectifier Diode
|
http://
IRF[International Rectifier]
International Rectifier, Corp.
VISHAY SEMICONDUCTORS
|
| S1Q S1ZZ |
1 Amp Silicon Rectifier 1200 to 2000 Volts 1 A, 2000 V, SILICON, SIGNAL DIODE, DO-214AA
|
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
|
| VCM4B10/00 |
KAMERA MINI PCB FARBE 330 ZEILEN 3.8MM 卡美拉迷你板FARBE 330 ZEILEN 3.8毫米
|
ECM Electronics, Ltd.
|
| Z75 |
ZENER SILICON RECTIFIER VOLTAGE RANGE 75 to 330 Volts CURRENT 1.0 Watts
|
Rectron Semiconductor
|
| UPC14305 UPC16308 UPC16318 UPC16315 UPC16305 UPC16 |
Useage of Three-Terminal Regulators | User＇s Manual[05/2000] 使用三端稳压器|用户手册[05/2000]
|
Atmel, Corp.
TE Connectivity, Ltd.
NEC, Corp.
|
| QCN-SERIES QCN QCN-12 QCN-12A QCN-19 QCN-25 QCN-27 |
Ultra-Small Ceramic Power Splitters/Combiners 2 Way-9050з 330 to 3400 MHz 800 MHz - 1375 MHz RF/MICROWAVE COMBINER, 1 dB INSERTION LOSS
Ultra-Small Ceramic Power Splitters/Combiners 2 Way-90 50 330 to 3400 MHz
Ultra-Small Ceramic Power Splitters/Combiners 2 Way-90∑ 50з 330 to 3400 MHz
Ultra-Small Ceramic Power Splitters/Combiners 2 Way-90° 50 330 to 3400 MHz
Ultra-Small Ceramic Power Splitters/Combiners 2 Way-90° 50?/a> 330 to 3400 MHz
|
Mini Circuits
MINI[Mini-Circuits]
|
| NTSA4100 |
Schottky Rectif
|
ON Semiconductor
|
| ER1ZZ |
1 A, 2000 V, SILICON, SIGNAL DIODE, DO-215AA SMBG, 2 PIN
|
Microsemi, Corp.
|
| S1ZZP |
1 A, 2000 V, SILICON, SIGNAL DIODE, DO-214AA PLASTIC, SMBJ, 2 PIN
|
Micro Commercial Components, Corp.
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
|
