| PART |
Description |
Maker |
| PV05 PV05-27B05 PV10-27B24 |
NEW POWER SOURCES 200-1200VDC OVERWIDE
|
RSG Electronic Components GmbH
RSG Electronic Componen...
|
| NC503SM-15 |
Surface Mount Noise Sources 200 kHz to 2 GHz
|
Micronetics, Inc.
|
| AB05 |
LUXEON? Power Light Sources
|
Lumileds Lighting Company
|
| FRP1000 FRP1010 FRP1015 FRP1020 FRP2010CC FRP2020C |
Ultra-fast POWER planar?/a> Rectifiers 10-20 A, 50-200 V
Ultra-fast POWER planar Rectifiers 10-20 A, 50-200 V
Ultra-fast POWER planar⑩ Rectifiers 10-20 A, 50-200 V
Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 V
Ultra-fast POWER planarRectifiers 10-20 A, 50-200 V
CAP 120PF 50V 5% NPO(C0G) SMD-0603 TR-7-PA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| NMA5250-B1M |
High Power Broadband Noise Sources 100 Hz to 1500 MHz
|
Micronetics, Inc.
|
| NMA5108-A1M |
High Power Broadband Noise Sources 100 Hz to 300 MHz
|
Micronetics, Inc.
|
| NMA5108-B1M |
High Power Broadband Noise Sources 100 Hz to 300 MHz
|
Micronetics, Inc.
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MMFT107T1D MMFT107T3 MMFT107T1 MMFT107 MMFT107T1-D |
Power MOSFET 250 mA, 200 Volts N-Channel SOT-223
Power MOSFET 250 mA / 200 Volts
Power MOSFET 250 mA, 200 Volts 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
|
ONSEMI[ON Semiconductor]
|
| NMA2512-1T |
High Power Broadband Noise Sources 10 MHz to 2000 MHz
|
Micronetics, Inc.
|
| NMA5107-B1M |
High Power Broadband Noise Sources 100 Hz to 100 MHz
|
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