| PART |
Description |
Maker |
| 2SJ486 |
RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开
Silicon P Channel MOS FET Low FrequencyPower Switching
Silicon P-Channel MOS FET
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| 2SK2938 |
Silicon N Channel MOS FET(N娌??MOSFET)
Silicon N Channel MOS FET(N沟道MOSFET) 通道场效应晶体管（不适用沟道MOSFET的）
From old datasheet system
|
Hitachi,Ltd.
|
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| D1218UK |
CAT6 SOL PC PVC WHI 25FT PVC SOLID PATCH CORD 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-12.5V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应60W-12.5V-500MHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab, Ltd.
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| 2SJ0536 |
Silicon P-Channel MOS FET
Silicon P-Channel MOS FET 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
PANASONIC CORP
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| 2SK2121 |
Silicon N-Channel MOS FET(N沟道MOSFET)
Silicon N-Channel MOS FET(N娌??MOSFET)
|
Hitachi,Ltd.
|
| 2SJ215 |
Silicon P-Channel MOS FET(P沟道MOSFET)
Silicon P-Channel MOS FET(P娌??MOSFET)
|
Hitachi,Ltd.
|
