| PART |
Description |
Maker |
| IR2010PBF-15 |
Floating channel designed for bootstrap operation
|
International Rectifier
|
| AUIRS2184S AUIRS2184S-15 |
Floating channel designed for bootstrap operation
|
International Rectifier
|
| AUIRS2117S AUIRS2117S-15 |
Floating channel designed for bootstrap operation
|
International Rectifier
|
| AUIRS2301S AUIRS2301S-15 |
HALF BRIDGE BASED PRPHL DRVR, PDSO8 Floating channel designed for bootstrap operation
|
International Rectifier
|
| IR2235JPBF IR2135JTRPBF IR2133PBF IR2133JSPBF IR22 |
0.5 A 3 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC32 3-PHASE BRIDGE DRIVER Floating channel designed for bootstrap operation Fully operational to 600V or 1200V Tolerant to negative transient voltage dV/dt immune
|
International Rectifier
|
| C1206Y103K2RACTU |
Ceramic, Floating Electrode, FloatingFlexTerm-(CxxxxY), 0.01 uF, 10%, 200 V, 1206, X7R, SMD, MLCC, FF-CAP, Floating Electrode
|
Kemet Corporation
|
| LA47503 |
29 W, 4 CHANNEL, AUDIO AMPLIFIER, PZFM25 Car stereo BTL 4-channel (50 W x 4) power amplifier IC, version designed to resist noise from power mirrors
|
Sanyo Semiconductor
|
| IRF7341ITRPBF |
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market
|
International Rectifier
|
| IRF7309ITRPBF IRF7309IPBF |
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market
|
International Rectifier
|
| IRF7379ITRPBF |
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market
|
International Rectifier
|
| NE56610 NE56610-42GW NE56610-45GW NE56612-45GW NE5 |
Family of devices designed to generate a reset signal for a variety of microprocessor and logic systems 家庭旨在生成一个微处理器和逻辑的各种复位信号系统设 Family of devices designed to generate a reset signal for a variety of microprocessor and logic systems 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|