| PART |
Description |
Maker |
| AUIRS2334S AUIRS2334S-15 |
Floating channel designed for bootstrap operation
|
International Rectifier
|
| IRS2011PBF IRS2011PBF-15 |
Floating channel designed for bootstrap operation
|
International Rectifier
|
| AUIRS2123 AUIRS2123-15 |
Floating channel designed for bootstrap operation
|
International Rectifier
|
| AUIRS2110STR AUIRS2113S AUIRS2113STR AUIRS2110-15 |
Automotive Grade
Floating channel designed for bootstrap operation
|
International Rectifier
|
| IRS21867SPBF |
HIGH AND LOW SIDE DRIVER
Floating channel designed for bootstrap operation
|
International Rectifier
|
| C1206Y103K2RACTU |
Ceramic, Floating Electrode, FloatingFlexTerm-(CxxxxY), 0.01 uF, 10%, 200 V, 1206, X7R, SMD, MLCC, FF-CAP, Floating Electrode
|
Kemet Corporation
|
| C0603Y153K5RACAUTO |
SMD Auto X7R FF, Ceramic, Floating Electrode, 0.015 uF, 10%, 50 V, 0603, X7R, SMD, MLCC, FF-CAP, Floating Electrode, Automotive Grade
|
Kemet Corporation
|
| SF2135A |
Designed for Wide Channel IF Filtering
|
RF Monolithics, Inc
|
| IRF7835UPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market
|
International Rectifier
|
| IRF7807ZUPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market
|
International Rectifier
|
| 2N4416A |
SMALL SIGNAL N-CHANNEL J-FET THAT IS DESIGNED TO PROVIDE HIGH PERFORMANCE AMPLIFICATION AT HIGH FREQUENCIES
|
Seme LAB
|
|
