| PART |
Description |
Maker |
| AUIRS2191S-15 |
Floating channel designed for bootstrap operation
|
International Rectifier
|
| IRS21867SPBF |
HIGH AND LOW SIDE DRIVER
Floating channel designed for bootstrap operation
|
International Rectifier
|
| AUIRS2301S AUIRS2301S-15 |
HALF BRIDGE BASED PRPHL DRVR, PDSO8
Floating channel designed for bootstrap operation
|
International Rectifier
|
| AUIRS2004S AUIRS2004STR AUIRS2004S-15 |
Automotive Grade HALF-BRIDGE DRIVER IC Undervoltage lockout
Floating channel designed for bootstrap operation
|
International Rectifier
|
| C1206Y103K2RACTU |
Ceramic, Floating Electrode, FloatingFlexTerm-(CxxxxY), 0.01 uF, 10%, 200 V, 1206, X7R, SMD, MLCC, FF-CAP, Floating Electrode
|
Kemet Corporation
|
| C1206Y103K5RACTU |
Ceramic, Floating Electrode, FloatingFlexTerm-(CxxxxY), 0.01 uF, 10%, 50 V, 1206, X7R, SMD, MLCC, FF-CAP, Floating Electrode
|
Kemet Corporation
|
| PSMN075-100MSE |
N-channel 100 V 71 m standard level MOSFET in LFPAK33 designed specifically for PoE applications
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications
|
NXP Semiconductors
|
| AUIRLR2905ZTR AUIRLR2905ZTRL AUIRLR2905ZTRR |
Specifically designed for Automotive applications
42 A, 55 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| IRF7309ITRPBF IRF7309IPBF |
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market
|
International Rectifier
|
| MRF6V2150N MRF6V2150NB |
N-Channel Enhancement-Mode Lateral MOSFETs
Designed primarily for wideband large- signal output and driver applications
|
FREESCALE[Freescale Semiconductor, Inc]
Motorola Semiconductor Products
|
|
