| PART |
Description |
Maker |
| AUIRS2181S AUIRS2181S-15 |
Floating channel designed for bootstrap operation
|
International Rectifier
|
| IR2011PBF-15 |
Floating channel designed for bootstrap operation
|
International Rectifier
|
| C1206Y103K5RACTU |
Ceramic, Floating Electrode, FloatingFlexTerm-(CxxxxY), 0.01 uF, 10%, 50 V, 1206, X7R, SMD, MLCC, FF-CAP, Floating Electrode
|
Kemet Corporation
|
| C0603Y153K5RACAUTO |
SMD Auto X7R FF, Ceramic, Floating Electrode, 0.015 uF, 10%, 50 V, 0603, X7R, SMD, MLCC, FF-CAP, Floating Electrode, Automotive Grade
|
Kemet Corporation
|
| PT2323 |
6-Channel Audio Selector Utilizing CMOS Technology Specially Designed
|
Princeton Technology
|
| PSMN075-100MSE |
N-channel 100 V 71 m standard level MOSFET in LFPAK33 designed specifically for PoE applications
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications
|
NXP Semiconductors
|
| AUIRLR2905ZTR AUIRLR2905ZTRL AUIRLR2905ZTRR |
Specifically designed for Automotive applications
42 A, 55 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| IRF7341ITRPBF |
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market
|
International Rectifier
|
| IRF7309ITRPBF IRF7309IPBF |
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market
|
International Rectifier
|
| MRF6V2150N MRF6V2150NB |
N-Channel Enhancement-Mode Lateral MOSFETs
Designed primarily for wideband large- signal output and driver applications
|
FREESCALE[Freescale Semiconductor, Inc]
Motorola Semiconductor Products
|
|
