| PART |
Description |
Maker |
| BTA08-600C |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
| IRGBC20F |
600V Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| BUK854-800A |
Insulated Gate Bipolar Transistor IGBT 12 A, 800 V, N-CHANNEL IGBT, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| APT20GF120KRG |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Microsemi, Corp.
|
| IRG4BC20S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
| IRG4BC30U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| IRGBC30KD2 |
600V Copack IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT
|
IRF[International Rectifier]
|
| BUZ73AL-E3045 |
5.5 A, 200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
|
SIEMENS AG
Infineon Technologies AG
|
| BUZ40B-E3044 |
8.5 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 4 PIN
|
Infineon Technologies AG
|
| IRG4BC20F |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) 绝缘栅双极晶体管VCES和\u003d 600V电压的Vce（on）典\u003d 1.66V，@和VGE \u003d 15V的，集成电路\u003d 9.0,9.0
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| CYNA16-1200PT |
16 A, 1200 V, SCR, TO-220AB TO-220AB, 3 PIN
|
Crydom, Inc.
|
| MAC212-10-A16A MAC212-8-N MAC212-4-N |
800 V, 12 A, TRIAC, TO-220AB
600 V, 12 A, TRIAC, TO-220AB
200 V, 12 A, TRIAC, TO-220AB
|
MOTOROLA INC
|
|
