PART |
Description |
Maker |
4MBI100T-060 |
4MBI100T-060
|
Fuji Electric
|
APT50M60L2VFR |
POWER MOS V 500V 77A 0.060 Ohm
|
Advanced Power Technology
|
66070 66075 66909 66100 |
STATFREE MATERIAL, DISSIPATIVE, RUBBER, 2-LAYER, 0.060 (1.5mm)
|
List of Unclassifed Manufacturers List of Unclassifed Man...
|
16267 16251 |
STATFREE B MATERIAL, VINYL, DISSIPATIVE, HOMOGENEOUS, .100 and .060 STATFREE B MATERIAL, VINYL, DISSIPATIVE, HOMOGENEOUS, .100 & .060
|
List of Unclassifed Manufacturers List of Unclassifed Man...
|
0493470411 SD-49347-001 49347-0411 |
1.52mm (.060") Pitch, Sealed Wire-to-Board Housing, Female, 4 Circuits 1.52mm (.060) Pitch, Sealed Wire-to-Board Housing, Female, 4 Circuits
|
Molex Electronics Ltd.
|
5223000-2 |
2mm Centerline Futurebus Connectors ( Z-PACK 2mm FB ); FB-5R,ASY,060,SIG,HDR,SL,4.25 ( AMP )
|
Tyco Electronics
|
APT50M60JN |
POWER MOS IV 500V 71A 0.060 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
HCPL-0211 |
Option 060 for Plastic Optocoupler
|
Broadcom Corporation.
|
HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 100PF50V_5%_NPO_,SM0603 CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
BLM21P221SGPT BLM21P221SGPB BLM41P600SPT BLM11P300 |
FERRITE, CHIP TYPE, 0.35 OHM RESISTANCE, 220 OHM IMPEDANCE @ 100MHZ, SMT 0805 1 FUNCTIONS, 2 A, FERRITE CHIP FLT, S/M, 0805, 2000MA, FERRITE BD 1 FUNCTIONS, 2 A, FERRITE CHIP COIL, BEAD FERRITE 060 OHMS @ 100MHZ SM, 1806 1 FUNCTIONS, 6 A, FERRITE CHIP 1 FUNCTIONS, 1 A, FERRITE CHIP 1 FUNCTIONS, 3 A, FERRITE CHIP
|
Murata Manufacturing Co., Ltd. MURATA MANUFACTURING CO LTD
|
|