| PART |
Description |
Maker |
| STL50NH3LL07 STL50NH3LL |
N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET
N-channel 30 V - 0.011 ヘ - 13 A - PowerFLAT⑩ (6x5) ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| STL6NM60N |
N-channel 600 V - 0.85 Ω - 5.75 A - PowerFLAT (5x5) ultra low gate charge MDmesh II Power MOSFET
N-channel 600 V - 0.85 ヘ - 5.75 A - PowerFLAT⑩ (5x5) ultra low gate charge MDmesh⑩ II Power MOSFET
|
STMicroelectronics
|
| STL60NH3LL07 |
N-channel 30 V - 0.0065 楼? - 30 A - PowerFLAT垄芒 (6x5) ultra low gate charge STripFET垄芒 Power MOSFET
N-channel 30 V - 0.0065 Ω - 30 A - PowerFLAT?/a> (6x5) ultra low gate charge STripFET?/a> Power MOSFET
N-channel 30 V - 0.0065 Ω - 30 A - PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET
|
STMicroelectronics
|
| STD95NH02L-1 STD95NH02L |
N-channel 24V - 0.0039Ω - 80A - DPAK - IPAK Ultra low gate charge STripFET Power MOSFET
N-channel 24V - 0.0039ヘ - 80A - DPAK - IPAK Ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| STFI6N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
| STF7N105K5 |
Ultra-low gate charge
|
STMicroelectronics
|
| STD5N95K5 STF5N95K5 |
Ultra-low gate charge
|
STMicroelectronics
|
| SPP20N65C3 SPP20N65C309 SPI20N65C3 SPA20N65C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP20N60C309 SPP20N60C3 SPI20N60C3 SPA20N60C3 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
| SPI11N60CFD |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
