| PART |
Description |
Maker |
| TC58TEG5DCJTAI0 |
NAND memory Toggle DDR1.0
|
Toshiba
|
| SC480IMLTRT SC480EVB |
Complete DDR1/2/3 Memory Power Supply
|
Semtech Corporation
|
| HCTS20MS HCTS20D_SAMPLE HCTS20DMSR HCTS20HMSR HCTS |
NAND-Gate, 4-Input, TTL Inputs, Dual, Rad-Hard, High-Speed, CMOS, Logic
Switch Boot; For Use With:Toggle Switches
Radiation Hardened Dual 4-Input NAND Gate HCT SERIES, DUAL 4-INPUT NAND GATE, CDFP14
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| A215SYZQ1437556-7 A107KYWQ0Q A107KY9V40Q0Q A107KYV |
Toggle Switches, A Series, Part Number Matrix
Toggle Switches; A215SYZQ=DP TOGGLE LUG TERM ( Alcoswitch )
|
Tyco Electronics
|
| K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| 1GW3B2AN6 |
NAND Flash Memory
|
ST Microelectronics
|
| MT29F8G08ABCBB |
NAND Flash Memory
|
Micron
|
| K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 K9K1216 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
64M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM29V64000TS |
8M X 8 BIT NAND FLSH MEMORY
|
Samsung semiconductor
|
| KM29U64000IT KM29U64000T |
8M x 8 Bit NAND Flash Memory
|
Samsung semiconductor
|
