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| PD - 9.1025 IRGPF20F INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 900V VCE(sat) 4.3V @VGE = 15V, I C = 5.3A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 900 9.0 5.3 18 18 20 5.0 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 2.1 -- 40 -- Units C/W g (oz) C-249 Revision 0 IRGPF20F Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 900 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.85 -- V/C VGE = 0V, I C = 1.0mA -- 2.9 4.3 IC = 5.3A V GE = 15V -- 3.5 -- V IC = 9.0A See Fig. 2, 5 -- 3.5 -- IC = 5.3A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -10 -- mV/C VCE = VGE, IC = 250A 0.9 1.5 -- S VCE = 100V, I C = 5.3A -- -- 250 A VGE = 0V, V CE = 900V -- -- 1000 VGE = 0V, V CE = 900V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 11 2.6 4.6 29 12 170 120 0.25 0.36 0.61 27 13 270 240 1.10 13 220 25 3.4 Max. Units Conditions 17 IC = 5.3A 3.9 nC VCC = 400V See Fig. 8 6.9 VGE = 15V -- TJ = 25C -- ns IC = 5.3A, V CC = 720V 300 VGE = 15V, R G = 50 280 Energy losses include "tail" -- -- mJ See Fig. 9, 10, 11, 14 1.10 -- TJ = 150C, -- ns IC = 5.3A, V CC = 720V -- VGE = 15V, R G = 50 -- Energy losses include "tail" -- mJ See Fig. 10, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 50, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-250 IRGPF20F 15 For bo th : Triangular w av e: 12 LO A D C U R RE NT (A ) D uty c yc le: 50% TJ = 125C T s in k = 90C G ate driv e as specified P ow er D iss ipa tion = 1 5W C lam p v oltage: 80% of rated 9 S quare w a ve: 60% of rated v oltage 6 3 Id e a l d io d e s 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 100 100 TJ = 25 C I C , C ollector-to-Em itter C urrent (A ) IC , C ollector-to-E m itter Current (A ) TJ = 15 0C 10 TJ = 2 5C 10 TJ = 1 50 C 1 1 0.1 0.1 1 V G E = 15 V 20 s P UL S E W ID TH 10 0.01 5 10 V C C = 1 00 V 5 s P UL S E W IDTH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-251 IRGPF20F 10 V G E = 15 V 6.0 V G E = 1 5V 8 0 s P U LS E W IDTH 8 V C E , C o llec to r-to-E m itter V oltage (V ) Maxim um D C Collector C urrent (A ) I C = 1 1A 5.0 6 4.0 4 I C = 5.3A 3.0 2 I C = 2.7 A 0 25 50 75 100 125 150 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C ) T C , C a s e Te m p e ra ture (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 T herm al Response (Z thJ C ) 1 D = 0.50 0 .2 0 0 .10 0.0 5 PD M 0.1 0.0 2 0 .01 t SIN G LE P U LS E (TH ER M AL R E SP O N SE ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 1 t2 0.01 0.00001 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-252 IRGPF20F 500 400 Cies 300 Coes 200 V G E , G ate-to-E m itter V oltag e (V ) 100 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 4 00 V I C = 5.3 A 16 C, C apacitance (pF) 12 8 Cres 100 4 0 1 10 0 0 2 4 6 8 10 12 V C E , C o llector-to-Em itter V oltage (V) Q g , T o tal G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0 .6 2 0 .6 1 T o tal S w itc hing Los se s (m J) T o ta l S w itc h in g L o s se s (m J ) VC C VG E TC IC = 72 0V = 1 5V = 25C = 5.3 A 10 R G = 50 V GE = 1 5V V CC = 72 0V I C = 1 1A 0 .6 0 0 .5 9 1 I C = 5.3A 0 .5 8 I C = 2.7A 0 .5 7 0 .5 6 20 25 30 35 40 45 50 55 0.1 -60 -40 -20 0 20 40 60 80 1 00 120 140 160 R G , G a te R e s is ta n c e ( ) W TC , C a se T e m p e ra tu re (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-253 IRGPF20F 4.0 3.0 I C , C o lle c to r-to -E m itte r C u rre n t (A ) Total Sw itching Losses (m J) RG TC VCC VGE = 50 = 1 50C = 72 0V = 1 5V 100 VG E E 20 V G= T J = 12 5C 10 S A FE O P E R A TING A R E A 2.0 1 1.0 0.0 0 2 4 6 8 10 12 0.1 1 10 100 1000 I C , C ollecto r-to-E m itter C urrent (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix F: Section D - page D-8 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13 C-254 |
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