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| (R) BYT30G-400 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr VF FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING SMD PACKAGE DESCRIPTION Single rectifier suited for freewheeling in converters and motor control circuits. Packaged in D2PAK, this surface mount device is intended for use in high frequency inverters, free wheeling and polarity protection applications. 1 30 A 400 V 50 ns 1.4 V 1&3 4 4 2 3 D2PAK (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) IF(AV) IFSM IFRM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak forward current Storage and junction temperature range Tc=100C = 0.5 tp=10ms sinusoidal tp = 5s f = 5 kHz Value 400 50 30 350 280 - 40 to + 150 Unit V A A A A C October 1999 - Ed: 3A 1/5 BYT30G-400 THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter Value 1 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Test Conditions VR = VRRM Tj = 25C Tj = 100C VF ** Forward voltage drop * tp = 5 ms, < 2 % ** tp = 380 s, < 2 % Min. Typ. Max. 35 6 1.4 1.5 Unit A mA V IF = 30 A IF = 30 A Tj = 100C Tj = 25C Pulse test : To evaluate the conduction losses use the following equation : P = 1.1 x IF(AV) + 0.0095 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Parameter Reverse recovery time Test Conditions Tj = 25C Irr = 0.25 A Tj = 25C dIF/dt = -15A/s TURN-OFF SWITCHING CHARACTERISTICS Symbol tIRM Parameter Maximum reverse recovery time Maximum reverse recovery current Turn-off overvoltage coefficient Test Conditions Tj = 100C IF = 30 A VCC = 200 V Lp < 0.05 H dIF/dt = -120A/s dIF/dt = -240A/s dIF/dt = -120A/s dIF/dt = -240A/s 12 3.3 / 50 9 ns Min. Typ. Max. 75 Unit ns IF = 0.5A IR = 1A IF = 1A VR = 30V Min. Typ. Max. 50 100 Unit ns IRM C factor Tj = 100C IF = IF(AV) VCC = 60 V Lp = 1 H dIF/dt = -30A/s PIN OUT configuration in D2PAK: 2/5 BYT30G-400 Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) =0.5 =0.2 =0.1 =0.05 T Fig.2 : Peak current versus form factor. 55 50 45 40 35 30 25 20 15 10 5 I M(A) 500 =1 450 400 P=20W T I M 350 300 250 200 150 100 50 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 P=30W P=40W =tp/T tp I F(av)(A) 5 10 15 20 25 =tp/T tp 0 0 30 35 40 Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) Tj=100 o C Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. K 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1 Zth(j-c) (tp. K= Rth(j-c) =0.5 =0.2 =0.1 ) 0.5 0.2 T Single pulse I FM(A) 0.0 0.1 tp(s) 1 10 100 =tp/T tp 0.1 0.001 0.01 0.1 1 Fig.5 : Non repetitive surge peak forward current versus overload duration. IM(A) Fig.6 : Average current versus ambient temperature. (: 0.5) I F(av)(A) Rth(j-a)=Rth(j-c) 250 200 35 30 25 =0.5 T 150 Tc=25 oC 20 15 =tp/T 100 Tc=60 o C tp IM 10 5 Rth(j-a)=15 o C/W 50 t =0.5 Tc=100 o C t(s) 0.01 0.1 1 0 0 Tamb( o C) 20 40 60 80 100 120 140 160 0 0.001 3/5 BYT30G-400 Fig.7 : Reverse recovery charge versus dIF/dt. Fig.8 : Forward recovery times versus dIF/dt. Fig.9 : Peak reverse current versus dIF/dt. Fig.10 : Peak forward voltage versus dIF/dt. Fig.11: Dynamic parameters versus junction temperature. 4/5 BYT30G-400 PACKAGE MECHANICAL DATA D2PAK (Plastic) REF. A E L2 C2 D L L3 A1 B2 B G A2 C R M * V2 * FLAT ZONE NO LESS THAN 2mm A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8.95 9.35 0.352 0.368 10.00 10.40 0.393 0.409 4.88 5.28 0.192 0.208 15.00 15.85 0.590 0.624 1.27 1.40 0.050 0.055 1.40 1.75 0.055 0.069 2.40 3.20 0.094 0.126 0.40 typ. 0.016 typ. 0 8 0 8 FOOT PRINT (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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