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| Datasheet File OCR Text: |
| C1-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The C1-12 is Designed for 12.5 Volt supply. Applications from 450 to 512 MHz. PACKAGE STYLE .280 4L PILL A FEATURES: * PG = 11 dB Typ. at 1.1 W/470 MHz * C = 65 % Typ. at 1.1 W/470 MHz * OmnigoldTM Metalization System C E OB B E OC MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 250 mA 36 V 28 V 4.0 V 5.0 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 35 C/ W DIM A B C D E F .275 / 6.99 .004 / 0.10 .050 / 1.27 .118 / 3.00 MINIMUM inches / mm D E F MAXIMUM inches / mm .220 / 5.59 .230 / 5.84 1.055 / 26.80 .285 / 7.24 .006 / 0.15 .060 . 1.52 .130 / 3.30 ORDER CODE: ASI CHARACTERISTICS SYMBOL BVCBO BVCES BVEBO hFE COB PG C TC = 25 C NONETEST CONDITIONS IC = 5.0 mA IC = 5.0 mA IE = 5.0 mA VCE = 6.0 V VCB = 12 V VCE = 12.5 V Pin = 0.1 W POUT = 1.1 W IC = 100 mA f = 1.0 MHz f = 470 MHz MINIMUM TYPICAL MAXIMUM 14.5 37 4.0 10 3.0 11 65 100 UNITS V V V --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. 0 1/1 |
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