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2sc535 silicon npn epitaxial planar ade-208-1047 (z) 1st. edition mar. 2001 application vhf amplifier, mixer, local oscillator outline 1. emitter 2. collector 3. base to-92 (2) 3 2 1
2sc535 2 absolute maximum ratings (ta = 25?) item symbol ratings unit collector to base voltage v cbo 30 v collector to emitter voltage v ceo 20 v emitter to base voltage v ebo 4v collector current i c 20 ma collector power dissipation p c 100 mw junction temperature tj 150 c storage temperature tstg ?5 to +150 c
2sc535 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 30 v i c = 10 m a, i e = 0 collector to emitter breakdown voltage v (br)ceo 20 v i c = 1 ma, r be = emitter to base breakdown voltage v (br)ebo 4vi e = 10 m a, i c = 0 collector cutoff current i cbo 0.5 m av cb = 10 v, i e = 0 dc current transfer ratio h fe * 1 60 200 v ce = 6 v, i c = 1 ma base to emitter voltage v be 0.72 v v ce = 6 v, i c = 1 ma collector to emitter saturation voltage v ce(sat) 0.17 v i c = 20 ma, i b =4 ma gain bandwidth product f t 450 940 mhz v ce = 6 v, i c = 5 ma collector output capacitance cob 0.9 1.2 pf v cb = 10 v, i e = 0, f = 1 mhz power gain pg 17 20 db v ce = 6 v, i c = 1 ma, f = 100 mhz noise figure nf 3.5 5.5 db v ce = 6 v, i c = 1 ma, f = 100 mhz, r g = 50 w input admittance (typ) yie 1.3 + j5.3 ms v ce = 6 v, i c = 1 ma, f = 100 mhz reverse transfer admittance (typ) yre ?.078 ?j0.41 ms foward transfer admittance (typ) yfe 32 ?j10 ms output admittance (typ) yoe 0.08 + j0.82 ms note: 1. the 2sc535 is grouped by h fe as follows. bc 60 to 120 100 to 200
2sc535 4 maximum collector dissipation curve 150 100 50 0 50 150 100 ambient tmperature ta ( c) collector power dissipation p c (mw) typical output characteristics 20 16 12 8 4 04 16 12 i b = 0 p c = 100 mw 25 m a 50 75 100 125 collector to emitter voltage v ce (v) collector current i c (ma) 20 8 150 300 175 200 225 250 275 typical output characteristics 50 40 30 20 10 m a i b = 0 5 4 3 2 1 0 4 12 20 8 collector to emitter voltage v ce (v) collector current i c (ma) 16 dc current transfer ratio vs. collector current collector current i c (ma) dc current transfer ratio h fe v ce = 6 v 120 100 80 60 40 20 0 0.1 0.5 10 5 0.2 2 20 1.0
2sc535 5 typical transfer cahracteristics (1) collector current i c (ma) v ce = 6 v 20 16 12 8 4 0 0.6 0.7 base to emitter voltage v be (v) 0.8 typical transfer cahracteristics (2) collector current i c (ma) v ce = 6 v 5 4 3 2 1 0 0.6 0.7 base to emitter voltage v be (v) 0.8 collector output capacitance vs. collector to base voltage collector to base voltage v cb (v) collector output capacitance c ob (pf) f = 1 mhz i e = 0 1.5 1.3 1.1 0.9 0.7 0.5 0.3 10 1.0 30 3
2sc535 6 gain bandwidth product vs. collector current collector current i c (ma) v ce = 6 v 1,000 800 600 400 200 0 0.1 0.5 2 10 0.2 1.0 5 20 gain bandwidth product f t (mhz) noise figure vs. collector current collector current i c (ma) noise figure nf (db) i c = 1 ma f = 100 mhz r g = 50 w 8 6 4 2 0 0.2 1.0 5 0.5 2 10
2sc535 7 noise figure vs. signal source resistance signal source resistance r g ( w ) noise figure nf (db) v ce = 6 v i c = 1 ma f = 100 mhz 8 6 4 2 0 20 100 500 50 200 1,000 noise figure nf (db) 8 6 4 2 0 15 21020 noise figure vs. collector to emitter voltage collecter to emitter voltage v ce (v) v ce = 6 v f = 100 mhz r g = 50 w 100 mhz power gain test circuit 300 p 3 k 500 0.01 m 0.1 m 0.01 m 10 p max v ee v cc 0.01 m d.u.t. in f = 100 mhz r g = 100 w out r l = 550 w unit r : w c : f input admittance characteristics input conductance g ie (ms) input suceptance b ie (ms) y ie = g ie + jb ie v ce = 6 v f = 200 mhz i c = 1 ma 150 150 50 70 70 100 100 200 2 ma 3 ma 5 ma 50 mhz 18 16 14 12 10 8 6 4 2 02 8 14 61218 41016
2sc535 8 reverse transfer admittance characteristics f = 50 mhz 70 100 150 200 i c = 5 ma 3 2 1 ?.0 ?.8 ?.6 ?.4 ?.2 0 ?.04 ?.16 ?.12 ?.08 reverse transfer conductance g re (ms) y re = g re + jb re v ce = 6 v reverse transfer suceptance b re (ms) ?.20 forward transfer admittance characteristics ?20 ?00 ?0 ?0 ?0 ?0 i c = 1 ma 2 ma 3 ma 5 ma 200 150 100 70 020 60 40 80 120 100 forward transfer conductance g fe (ms) forward transfer suceptance b fe (ms) f = 50 mhz y fe = g fe + jb fe v ce = 6 v output admittance characteristics output conductance g oe (ms) y oe = g oe + jb oe v ce = 6 v i c = 1 ma 23 5 2.4 2.0 1.6 1.2 0.8 0.4 0 0.1 0.6 0.4 0.3 0.2 0.5 output suceptance b oe (ms) 150 100 70 50 f = 200 mhz input admittance vs. collector to emitter voltage collector to emitter voltage v ce (v) input admittance y ie (ms) 10 5 2 1.0 0.5 1520 210 y ie = g ie + jb ie i c = 1 ma f = 100 mhz b ie g ie
2sc535 9 input admittance vs. collector current collector current i c (ma) input admittance y ie (ms) y ie = g ie + jb ie v ce = 6 v f = 100 mhz 20 10 5 2 1.0 0.5 0.2 0.1 0.5 2 10 0.2 1.0 5 b ie g ie reverse transfer admittance vs. collector to emitter voltage collector to emitter voltage v ce (v) reverse transfer suceptance b re (ms) reverse transfer conductance g re (ms) ?.0 ?.1 ?.05 ?.02 ?.01 ?.005 ? ?.2 ?.1 ?.05 1520 210 y re = g re + jb re i c = 1 ma f = 100 mhz b re g re y re = g re + jb re v ce = 6 v f = 100 mhz reverse transrer admittance vs. collector current collector current i c (ma) reverse transfer conductance g re (ms) reverse transfer suceptance b re (ms) b re g re ?.0 ?.5 ?.2 ?.1 ?.05 ?.02 ?.01 ?.1 ?.05 ?.02 ?.01 ?.005 ?.002 ?.001 0.1 0.5 2 10 0.2 1.0 5 forward transfer admittance vs. collector to emitter voltage collector to emitter voltage v ce (v) forward transfer admittance y ie (ms) 100 50 20 10 5 1520 210 y fe = g fe + jb fe i c = 1 ma f = 100 mhz ? fe g fe
2sc535 10 y fe = g fe + jb fe v ce = 6 v f = 100 mhz forward transrer admittance vs. collector current collector current i c (ma) forward transrer admittance y ie (ms) ? fe g fe 100 50 20 10 5 2 1 0.1 0.5 2 10 0.2 1.0 5 output admittance vs. collector to emitter voltage collector to emitter voltage v ce (v) output suceptance b oe (ms) output conductance g oe (ms) 2.0 1.0 0.5 0.2 0.1 1520 0.01 0.02 0.05 0.1 0.2 210 y eo = g oe + jb oe i c = 1 ma f = 100 mhz b oe g oe output admittance vs. collector current collector current i c (ma) output admittance y oe (ms) 0.1 0.5 2 10 0.2 1.0 5 2.0 1.0 0.5 0.2 0.1 0.05 0.02 y oe = g oe + jb oe v ce = 6 v f = 100 mhz b oe g oe
2sc535 11 package dimensions 0.60 max 0.5max 4.8 0.4 3.8 0.4 5.0 0.2 0.7 2.3 max 12.7 min 0.5max 1.27 2.54 hitachi code jedec eiaj mass (reference value) to-92 (2) conforms conforms 0.25 g as of january, 2001 unit: mm
2sc535 12 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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