SUD50N03-10BP vishay siliconix new product document number: 71227 s-01256erev. a, 19-jun-00 www.vishay.com faxback 408-970-5600 1 n-channel 30-v (d-s), 175 c, mosfet pwm optimized
v (br)dss (v) r ds(on) ( ) i d (a) a 30 0.010 @ v gs = 10 v 20 30 0.014 @ v gs = 4.5 v 18 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: SUD50N03-10BP
parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) a t a = 25 c i d 20 a continuous drain current (t j = 175 c) a t a = 100 c i d 14 a pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 20 maximum power dissipation t c = 25 c p d 71 b w maximum power dissipation t a = 25 c p d 8.3 a w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol typical maximum unit maximum junction - to - ambient a t 10 sec r thja 15 18 c/w m ax i mum j unc ti on- t o- a m bi en t a steady state r thja 40 50 c/w maximum junction-to-case steady state r thjc 1.75 2.1 notes: a. surface mounted on 1o x 1o fr4 board, t 10 sec. b. see soa curve for voltage derating.
SUD50N03-10BP vishay siliconix new product www.vishay.com faxback 408-970-5600 2 document number: 71227 s-01256erev. a, 19-jun-00
parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i ds = 250 a 0.8 2 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zgvl dic i v ds = 24 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 125 c 50 v ds = 24 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 50 a dis os r i a v gs = 10 v, i d = 15 a 0.0075 0.010 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 15 a, t j = 125 c 0.016 drain - source on - state resistance a r ds( on ) v gs = 10 v, i d = 15 a, t j = 175 c 0.019 v gs = 4.5 v, i d = 15 a 0.011 0.014 forward transconductance a g fs v ds = 15 v, i d = 15 a 20 s dynamic b input capacitance c iss v 0 v v 25 v f 1 mh 1500 f output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 530 pf reversen transfer capacitance c rss 240 total gate charge c q g v 15 v v 5 v i 20 a 15.5 19 c gate-source charge c q gs v ds = 15 v, v gs = 5 v, i d = 20 a 5 nc gate-drain charge c q gd 6 turn-on delay time c t d(on) 10 18 rise time c t r v dd = 15 v, r l = 0.3 8 15 ns turn-off delay time c t d(off) dd , l i d 20 a, v gen = 10 v, r g = 2.5 25 45 ns fall time c t f 9 16 gate resistance r g 2.3 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 50 a pulsed current i sm 100 a forward voltage a v sd i f = 100 a, v gs = 0 v 1.2 1.5 v reverse recovery time t rr i f = 20 a, di/dt = 100 a/ s 30 60 ns notes: a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
SUD50N03-10BP vishay siliconix new product document number: 71227 s-01256erev. a, 19-jun-00 www.vishay.com faxback 408-970-5600 3
0 2 4 6 8 10 0 6 12 18 24 30 0 10 20 30 40 50 60 70 80 0 20406080100 0 0.005 0.010 0.015 0.020 0 20406080100 0 20 40 60 80 100 012345 0 40 80 120 160 200 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) v gs transconductance (s) g fs 25 c 55 c 3 v t c = 125 c v ds = 15 v i d = 50 a v gs = 10 thru 6 v 5 v v gs = 10 v t c = 55 c 25 c 125 c 4 v v gs = 4.5 v on-resistance ( r ds(on) ) drain current (a) i d i d drain current (a) 0 400 800 1200 1600 2000 2400 0 6 12 18 24 30 c iss c oss 1, 2 v c rss
SUD50N03-10BP vishay siliconix new product www.vishay.com faxback 408-970-5600 4 document number: 71227 s-01256erev. a, 19-jun-00
0 0.4 0.8 1.2 1.6 2.0 50 25 0 25 50 75 100 125 150 175 on-resistance vs. junction temperature source-drain diode forward voltage t j junction temperature ( c) v sd source-to-drain voltage (v) source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 15 a t j = 25 c t j = 150 c (normalized) on-resistance ( r ds(on) ) 0
0 5 10 15 20 25 0 25 50 75 100 125 150 175 safe operating area v ds drain-to-source voltage (v) 1000 10 0.1 1 10 100 0.01 100 maximum avalanche drain current vs. ambient temperature t a case temperature ( c) drain current (a) i d 1 ms 10 s 100 s drain current (a) i d 1 0.1 limited by r ds(on) t a = 25 c single pulse 10 ms 100 ms dc 1 s 10 s 100 s 2 1 0.1 0.01 10 4 10 3 10 2 10 1 1 10 600 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1. duty cycle, d = 2. per unit base = r thja = 40 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 100
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