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mct5201m, mct5210m, mct5211m ?low input current phototransistor optocouplers ?983 fairchild semiconductor corporation www.fairchildsemi.com mct5201m, mct5210m, mct5211m rev. 1.1.3 september 2009 mct5201m, mct5210m, mct5211m low input current phototransistor optocouplers features high ctr ce(sat) comparable to darlingtons ctr guaranteed 0? to 70? high common mode transient rejection 5kv/? data rates up to 150kbits/s (nrz) underwriters laboratory (ul) recognized, file #e90700, volume 2 iec60747-5-2 approved (ordering option v) applications cmos to cmos/lsttl logic isolation lsttl to cmos/lsttl logic isolation rs-232 line receiver telephone ring detector ac line voltage sensing switching power supply description the mct52xxm series consists of a high-efficiency algaas, infrared emitting diode, coupled with an npn phototransistor in a six pin dual-in-line package. the mct52xxm is well suited for cmos to lstt/ttl interfaces, offering 250% ctr ce(sat) with 1ma of led input current. when an led input current of 1.6ma is supplied data rates to 20k bits/s are possible. the mct52xxm can easily interface lsttl to lsttl/ ttl, and with use of an external base to emitter resistor data rates of 100k bits/s can be achieved. schematic package outlines 1 2 6 5 col 4 emitter base anode cathode 3
?983 fairchild semiconductor corporation www.fairchildsemi.com mct5201m, mct5210m, mct5211m rev. 1.1.3 2 mct5201m, mct5210m, mct5211m ?low input current phototransistor optocouplers absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. symbol parameters value units tot al device t stg storage temperature -55 to +150 ? t opr operating temperature -40 to +100 ? t sol lead solder temperature 260 for 10 sec ? p d t otal device power dissipation @ 25? (led plus detector) 260 mw derate linearly from 25? 3.5 mw/? emitter i f continuous forward current 50 ma v r reverse input voltage 6 v i f (pk) forward current - peak (1 ? pulse, 300 pps) 3.0 a p d led power dissipation 75 mw derate linearly from 25? 1.0 mw/? detector i c continuous collector current 150 ma p d detector power dissipation 150 mw derate linearly from 25? 2.0 mw/?
?983 fairchild semiconductor corporation www.fairchildsemi.com mct5201m, mct5210m, mct5211m rev. 1.1.3 3 mct5201m, mct5210m, mct5211m ?low input current phototransistor optocouplers electrical characteristics (t a = 25? unless otherwise speci?d) individual component characteristics isolation characteristics *all typical t a = 25? symbol parameters test conditions device min. typ.* max. units emitter v f input forward voltage i f = 5ma all 1.25 1.5 v ? v f ? t a f orward voltage temp. coef?ient i f = 2ma all -1.75 mv/? v r reverse voltage i r = 10? all 6 v c j j unction capacitance v f = 0v, f = 1.0mhz all 18 pf detector bv ceo collector-emitter breakdown voltage i c = 1.0ma, i f = 0 all 30 100 v bv cbo collector-base breakdown voltage i c = 10?, i f = 0 all 30 120 v bv ebo emitter-base breakdown voltage i e = 10?, i f = 0 all 5 10 v i cer collector-emitter dark current v ce = 10v, i f = 0, r be = 1m ? all 1 100 na c ce capacitance, collector to emitter v ce = 0, f = 1mhz all 10 pf c cb capacitance, collector to base v cb = 0, f = 1mhz all 80 pf c eb capacitance, emitter to base v eb = 0, f = 1mhz all 15 pf symbol characteristic test conditions device min. typ.* max. units v iso input-output isolation v oltage (10) f = 60hz, t = 1 sec. all 7500 vac(peak) r iso isolation resistance (10) v i-o = 500 vdc, t a = 25? all 10 11 ? c iso isolation capacitance (9) v i-o = 0, f = 1 mhz all 0.4 0.6 pf cm h common mode transient v cm = 50 v p-p1 , r l = 750 ? , i f = 0 mct5210m/11m 5000 v/? rejection ?output high v cm = 50 v p-p , r l = 1k ? , i f = 0 mct5201m cm l common mode transient v cm = 50 v p-p1 , r l = 750 ? , i f =1.6ma mct5210m/11m 5000 v/? rejection ?output low v cm = 50 v p-p1 , r l = 1k ? , i f = 5ma mct5201m
?983 fairchild semiconductor corporation www.fairchildsemi.com mct5201m, mct5210m, mct5211m rev. 1.1.3 4 mct5201m, mct5210m, mct5211m ?low input current phototransistor optocouplers electrical characteristics (continued) (t a = 25? unless otherwise speci?d) t ransfer characteristics *all typicals at t a = 25? symbol characteristics test conditions device min. typ.* max. units dc characteristics ctr ce(sat) saturated current tr ansfer ratio (1) (collector to emitter) i f = 5ma, v ce = 0.4v mct5201m 120 % i f = 3.0ma, v ce = 0.4v mct5210m 60 i f = 1.6ma, v ce = 0.4v mct5211m 100 i f = 1.0ma, v ce = 0.4v 75 ctr (ce) current transfer ratio (collector to emitter) (1) i f = 3.0ma, v ce = 5.0v mct5210m 70 % i f = 1.6ma, v ce = 5.0v mct5211m 150 i f = 1.0ma, v ce = 5.0v 110 ctr (cb) current transfer ratio collector to base (2) i f = 5ma, v cb = 4.3v mct5201m 0.28 % i f = 3.0ma, v ce = 4.3v mct5210m 0.2 i f = 1.6ma, v ce = 4.3v mct5211m 0.3 i f = 1.0ma, v ce = 4.3v 0.25 v ce(sat) saturation voltage i f = 5ma, i ce = 6ma mct5201m 0.4 v i f = 3.0ma, i ce = 1.8ma mct5210m 0.4 i f = 1.6ma, i ce = 1.6ma mct5211m 0.4 ac characteristics t phl propagation delay high-to-low (3) r l = 330 ? , r be = i f = 3.0ma, v cc = 5.0v mct5210m 10 ? r l = 3.3 k ? , r be = 39k ? 7 r l = 750 ? , r be = i f = 1.6ma, v cc = 5.0v mct5211m 14 r l = 4.7 k ? , r be = 91k ? 15 r l = 1.5 k ? , r be = i f = 1.0ma, v cc = 5.0v 17 r l = 10 k ? , r be = 160k ? 24 v ce = 0.4v, v cc = 5v, r l = ?. 13, r be = 330k ? i f = 5ma mct5201m 3 30 t plh propagation delay low-to-high (4) r l = 330 ? , r be = i f = 3.0ma, v cc = 5.0v mct5210m 0.4 ? r l = 3.3 k ? , r be = 39k ? 8 r l = 750 ? , r be = i f = 1.6ma, v cc = 5.0v mct5211m 2.5 r l = 4.7 k ? , r be = 91k ? 11 r l = 1.5 k ? , r be = i f = 1.0ma, v cc = 5.0v 7 r l = 10 k ? , r be = 160k ? 16 v ce = 0.4v, v cc = 5v, r l = ?. 13, r be = 330k ? i f = 5ma mct5201m 12 13 t d delay time (5) v ce = 0.4v, r be = 330k ? , r l = 1 k ? , v cc = 5v i f = 5ma mct5201m 1.1 15 ? t r rise time (6) v ce = 0.4v, r be = 330k ? , r l = 1 k ? , v cc = 5v i f = 5ma mct5201m 2.5 20 ? t s storage time (7) v ce = 0.4v, r be = 330 k ? , r l = 1 k ? , v cc = 5v i f = 5ma mct5201m 10 13 ? t f f all time (8) v ce = 0.4v, r be = 330 k ? , r l = 1 k ? , v cc = 5v i f = 5ma mct5201m 16 30 ?
?983 fairchild semiconductor corporation www.fairchildsemi.com mct5201m, mct5210m, mct5211m rev. 1.1.3 5 mct5201m, mct5210m, mct5211m ?low input current phototransistor optocouplers notes: 1. dc current transfer ratio (ctr ce ) is de?ed as the transistor collector current (i ce ) divided by the input led current (i f ) x 100%, at a speci?d voltage between the collector and emitter (v ce ). 2. the collector base current transfer ratio (ctr cb ) is de?ed as the transistor collector base photocurrent(i cb ) divided by the input led current (i f ) time 100%. 3. referring to figure 14 the t phl propagation delay is measured from the 50% point of the rising edge of the data input pulse to the 1.3v point on the falling edge of the output pulse. 4. referring to figure 14 the t plh propagation delay is measured from the 50% point of the falling edge of data input pulse to the 1.3v point on the rising edge of the output pulse. 5. delay time (t d ) is measured from 50% of rising edge of led current to 90% of vo falling edge. 6. rise time (t r ) is measured from 90% to 10% of vo falling edge. 7. storage time (t s ) is measured from 50% of falling edge of led current to 10% of vo rising edge. 8. fall time (t f ) is measured from 10% to 90% of vo rising edge. 9. c iso is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected). 10. device considered a two terminal device: pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together.
?983 fairchild semiconductor corporation www.fairchildsemi.com mct5201m, mct5210m, mct5211m rev. 1.1.3 6 mct5201m, mct5210m, mct5211m ?low input current phototransistor optocouplers safety and insulation ratings as per iec 60747-5-2, this optocoupler is suitable for ?afe electrical insulation?only within the safety limit data. compliance with the safety ratings shall be ensured by means of protective circuits. symbol parameter min. typ. max. unit installation classi?ations per din vde 0110/1.89 ta b le 1 f or rated main voltage < 150vrms i-iv f or rated main voltage < 300vrms i-iv climatic classi?ation 55/100/21 p ollution degree (din vde 0110/1.89) 2 cti comparative tracking index 175 v pr input to output test voltage, method b, v iorm x 1.875 = v pr , 100% production test with tm = 1 sec, partial discharge < 5pc 1594 v peak input to output test voltage, method a, v iorm x 1.5 = v pr , type and sample test with tm = 60 sec, partial discharge < 5pc 1275 v peak v iorm max. working insulation voltage 850 v peak v iotm highest allowable over voltage 6000 v peak external creepage 7 mm external clearance 7 mm insulation thickness 0.5 mm rio insulation resistance at ts, v io = 500v 10 9 ?
?983 fairchild semiconductor corporation www.fairchildsemi.com mct5201m, mct5210m, mct5211m rev. 1.1.3 7 mct5201m, mct5210m, mct5211m ?low input current phototransistor optocouplers typical performance curves fig. 1 led forward voltage vs. forward current fig. 2 normalized current transfer ratio vs. forward current fig. 3 normalized ctr vs. temperature fig. 4 normalized collector vs. collector-emitter voltage fig. 5 normalized collector base photocurrent ratio vs. forward current fig. 6 normalized collector-base current vs. temperature 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.1 1 10 v f ?forward voltage (v) 10 1 0.1 0.01 0.001 0.0001 100 10 1 0.1 0.01 10 1 0.1 0.01 0.001 normalized current transfer ratio normalized i cb ?collector-base photo current normalized collector-base current normalized i ce ? collector-emitter current normalized current transfer ratio i f ?led forward current (ma) t a ?ambient temperature ( c) t a ?ambient temperature ( c) i f ?forward current (ma) v ce ?collector-emitter voltage (v) i f ?forward current (ma) 100 0.1 -20 0 20 40 60 -60 -40 -20 0 20 40 60 80 100 0.1 1 10 0.1 1 100 10 110 t a = -40 c t a = 25 c t a = 100 c i f = 2ma i f = 1ma i f = 0.5ma i f = 0.2ma normalized to: i f = 5ma v ce = 5v t a = 25 c i f = 0.2ma i f = 0.5ma i f = 1ma i f = 2ma i f = 5ma i f = 10ma normalized to: i f = 5ma v cb = 4.3v t a = 25 c normalized to: i f = 5ma v cb = 4.3v t a = 25 c i f = 0.2ma i f = 0.5ma i f = 1ma i f = 2ma i f = 5ma i f = 10ma 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 normalized to: i f = 5ma v ce = 5v t a = 25 c -40 -20 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 normalized to: i f = 5ma v ce = 5v t a = 25 c i f = 10ma i f = 5ma
?983 fairchild semiconductor corporation www.fairchildsemi.com mct5201m, mct5210m, mct5211m rev. 1.1.3 8 mct5201m, mct5210m, mct5211m ?low input current phototransistor optocouplers typical performance curves (continued) fig. 7 collector-emitter dark current vs. ambient temperature fig. 8 switching time vs. ambient temperature fig. 9 switching time vs. ambient temperature fig. 10 switching time vs. ambient temperature fig. 11 switching time vs. ambient temperature fig. 12 switching time vs. base-emitter resistance 0102030405 060708090 10000 1000 100 10 1 0.1 i ceo ?dark current (na) t a ?ambient temperature ( c) t a ?ambient temperature ( c) 100 120 -40 -20 0 20 40 60 80 100 t a ?ambient temperature ( c) 120 -40 -20 0 20 40 60 80 100 t a ?ambient temperature ( c) 120 -20 -40 0 20 40 60 80 100 t a ?ambient temperature ( c) r be ?base-emitter resistance (k ? ) -40 -20 0 20 40 60 80 100 120 i f = 0ma v ce = 10v t ?switching time ( s) t ?switching time ( s) t ?switching time ( s) t ?switching time ( s) t ?switching time ( s) 10 100 1000 10000 1 10 100 0 5 10 15 20 25 30 t phl t plh t f t s t r t d i f = 10ma v cc = 5v r l = 1k ? r be = 330k ? 0 5 10 15 20 25 30 t phl t plh t f t s t r t d i f = 10ma v cc = 5v r l = 1k ? r be = 100k ? refer to figure 13 for switching time circuit 0 4 8 12 16 20 t phl t plh t f t s t r t d i f = 5ma v cc = 5v r l = 1k ? r be = 330k ? refer to figure 13 for switching time circuit 0 4 8 12 16 20 t phl t plh t f t s t r t d i f = 5ma v cc = 5v r l = 1k ? r be = 100k ? refer to figure 13 for switching time circuit v cc = 5v t a = 25 c t phl , i f = 3ma, r l = 3.3k ? t t plh , i f = 1ma, r l = 10k ? t phl , i f = 1ma, r l = 10k ? phl , i f = 1.6ma, r l = 4.7k ? t plh i f = 1.6ma r l = 4.7k ? t plh i f = 3ma r l = 3.3k ? refer to figure 13 for switching time circuit
?983 fairchild semiconductor corporation www.fairchildsemi.com mct5201m, mct5210m, mct5211m rev. 1.1.3 9 mct5201m, mct5210m, mct5211m ?low input current phototransistor optocouplers typical electro-optical characteristics (t a = 25? unless otherwise specified) pulse gen z o = 50 ? f = 10khz 10% d.f. v cc = 5.0 v i f monitor test circuit t r , t f , t d , t s v o 1k 100 ? 330k pulse gen z o = 50 ? f = 10khz 10% d.f. v cc = 5.0 v i f monitor test circuit t phl , t plh v o 1k 4.7k d2 d3 d4 d1 100 ? 330k figure 13. t phl 1.3 v 1.3 v 10% 10% 90% 90% 50% input (i f ) output (v o ) 0 0 t r t d t f t s t plh figure 14. switching circuit waveforms
?983 fairchild semiconductor corporation www.fairchildsemi.com mct5201m, mct5210m, mct5211m rev. 1.1.3 10 mct5201m, mct5210m, mct5211m ?low input current phototransistor optocouplers package dimensions 8.13?.89 6.10?.60 pin 1 64 13 0.25?.36 5.08 (max.) 3.28?.53 0.38 (min.) 2.54?.81 2.54 (bsc) (0.86) 0.41?.51 1.02?.78 0.76?.14 8.13?.89 6.10?.60 pin 1 64 13 0.25?.36 5.08 (max.) 3.28?.53 0.38 (min.) 2.54?.81 2.54 (bsc) (0.86) 0.41?.51 1.02?.78 0.76?.14 7.62 (typ.) 15?(typ.) 0.20?.30 0.20?.30 10.16?0.80 through hole 0.4" lead spacing surface mount rcommended pad layout (1.78) (2.54) (1.52) (7.49) (10.54) (0.76) 8.13?.89 note: all dimensions in mm. 6.10?.60 8.43?.90 pin 1 64 13 0.25?.36 2.54 (bsc) (0.86) 0.41?.51 1.02?.78 0.76?.14 0.38 (min.) 3.28?.53 5.08 (max.) 0.20?.30 0.16?.88 (8.13)
?983 fairchild semiconductor corporation www.fairchildsemi.com mct5201m, mct5210m, mct5211m rev. 1.1.3 11 mct5201m, mct5210m, mct5211m ?low input current phototransistor optocouplers ordering information marking information option order entry identi?r (example) description no suf? mct5201m standard through hole device (50 units per tube) s mct5201sm surface mount lead bend sr2 MCT5201SR2M surface mount; tape and reel (1,000 units per reel) t mct5201tm 0.4" lead spacing v mct5201vm iec60747-5-2 tv mct5201tvm iec60747-5-2, 0.4" lead spacing sv mct5201svm iec60747-5-2, surface mount sr2v mct5201sr2vm iec60747-5-2, surface mount, tape and reel (1,000 units per reel) *note ?parts that do not have the ? option (see de?ition 3 above) that are marked with date code ?25 or earlier are marked in portrait format. de?itions 1f airchild logo 2d e vice number 3 vde mark (note: only appears on parts ordered with vde option ?see order entry table) 4 one digit year code, e.g., ? 5t wo digit work week ranging from ?1 to ?3 6 assembly package code mct5201 v x yy q 1 2 6 4 3 5
?983 fairchild semiconductor corporation www.fairchildsemi.com mct5201m, mct5210m, mct5211m rev. 1.1.3 12 mct5201m, mct5210m, mct5211m ?low input current phototransistor optocouplers carrier tape specification reflow profile 4.0 0.1 1.5 min user direction of feed 2.0 0.05 1.75 0.10 11.5 1.0 24.0 0.3 12.0 0.1 0.30 0.05 21.0 0.1 4.5 0.20 0.1 max 10.1 0.20 9.1 0.20 1.5 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 c time (s) 0 60 180 120 270 260 c >245 c = 42 sec time above 183 c = 90 sec 360 1.822 c/sec ramp up rate 33 sec
?983 fairchild semiconductor corporation www.fairchildsemi.com mct5201m, mct5210m, mct5211m rev. 1.1.3 13 tradem arks th e following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its global subsidiaries ,and is not in tended to be an exhaustive list of all such trademarks. auto-spm build it now coreplus corepower crossvolt ctl current transfer logic ecospark e fficentmax ezswitch* * fair child fairchild semiconductor fa ct quiet series fact f ast fa stvcore fetbench flashwriter * fps f-pfs frfet global power resource sm green fps green fps e-series g max gto in tellimax isoplanar me gabuck mi crocoupler microfet mi cropak m illerdrive moti onmax mo tion-spm optologic op toplanar pdp spm powe r-spm po we rtrench powerxs pr ogrammable active droop qfet qs quiet series r apidconfigure saving our world, 1mw/w/kw at a time sm artmax smart start spm stealth s uperfet sup ersot -3 s upersot -6 s upersot -8 s upremos syncfet sy nc-lock * th ep ower franchise ti nyboost tinybuck ti nylogic tinyopto tinypower tinypwm tinywire trifault detect t ruecurrent * serdes uhc ultra frfet unifet vcx vi sualmax xs *t rademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fa i rchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild? worldwide terms and conditions, specifically the warranty therein, which covers t hese products. li fe support policy fa i rchild? products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are in tended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance wi th instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. an ti -counterfeiting policy fairchild semiconductor corporation's anti-counterfeiting policy. fairchild's anti-counterfeiting policy is also stated on our external websi te, www.fairchildsemi.com, under sales support. c ounterfeiting of semiconductor parts is a growing problem in the industry. all manufacturers of semiconductor products are experiencing counterf eiting of their parts. cu stomers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, faile da pplications, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselves and our customers from the proli feration of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fairchild or from authorized fairchi ld dist ributors who are lis ted by country on our web page cited above. products customers buy either from fairchild directly or from authorized fairchild distributors are ge nuine parts, have full traceability, meet fairchild's quality standards for handling and storage and provide access to fairchild's full range of up-to-date technica land product information. fairchild and our authorized distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. fairc hild will not provide any warranty coverage or other assistance for parts bought from unauthorized sources. fairchild is committed to combat this global problem and encou rage our customers to do their part in stopping this practice by buying direct or from authorized distributors. product status definitions defi nition of terms da tasheet identification product st atus definition ad vance information formative / in design datasheet contains the design specifi cations for product development. s pecifications may change in any manner without notice. pr eliminary datasheet contains preliminary data; supplementary data will be published at a later date. fairchild se mi conductor reserves the right to make changes at any time without notice to improve design. no i dentification needed full production datasheet contains final specifications. fairchi ld semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. th e datasheet is for reference information only. rev. i40 first production mct5201m, mct5210m, mct5211m ?low input current phototransistor optocouplers

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