the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. silicon power transistor 2sa1647,1647-z pnp silicon epitaxial transistor for high-speed switching data sheet document no. d14839ej5v0ds00 (5th edition) date published june 2006 ns cp(k) printed in japan 2002 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. description the 2sa1647 is a mold power transistor developed for high-speed switching and features a very lo w collector-to-emitter saturation voltage. this transistor is ideal for us e in switching regulators, dc/dc converters, motor drivers, sol enoid drivers, and other low-voltage power supply devices, as well as for high-current switching. features ? available for high-current control in small dimension ? z type is a lead processed product and is deal for mounting a hybrid ic. ? low collector saturation voltage: v ce(sat)1 = ? 0.3 v max. (i c = ? 3.0 a) ? fast switching speed: t f = 0.4 s max. (i c = ? 3.0 a) ? high dc current gain and excellent linearity absolute maximum ratings (t a = 25 c) parameter symbol ratings unit collector to base voltage v cbo ? 150 v collector to emitter voltage v ceo ? 100 v base to emitter voltage v ebo ? 7.0 v collector current (dc) i c(dc) ? 5.0 a collector current (pulse) i c(pulse) note 1 ? 10 a base current (dc) i b(dc) ? 2.5 a total power dissipation (tc = 25 c) p t 18 w total power dissipation (t a = 25 c) p t 1.0 note 2 , 2.0 note 3 w junction temperature t j 150 c storage temperature t stg ? 55 to +150 c notes 1. pw 10 ms, duty cycle 50% 2. printing board mounted 3. 7.5 cm 2 0.7 mm ceramic board mounted package drawings (unit: mm) 2 13 6.5 0.2 5.0 0.2 4 1.5 ? 0.1 +0.2 5.5 0.2 7.0 min. 13.7 min. 2.3 2.3 0.75 0.5 0.1 2.3 0.2 1.6 0.2 1.1 0.2 0.5 ? 0.1 +0.2 0.5 ? 0.1 +0.2 123 4 6.5 0.2 4.4 0.2 5.0 0.2 0.5 0.1 0.5 0.1 2 ? 2.3 0.3 5.6 0.3 9.5 0.5 2.5 0.5 1.0 0.5 5.5 0.2 1.5 ? 0.1 +0.2 2.3 0.2 0.5 0.1 note note 0.4 min. 0.5typ. 0.15 0.15 to-251 (mp-3) to-252 (mp-3z) electrode connection 1. base 2. collector 3. emitter 4. collector fin note the depth of notch at t he top of the fin is from 0 to 0.2 mm.
data sheet d14839ej5v0ds 2 2sa1647,1647-z electrical characteristics (t a = 25 c) parameter symbol conditions min. typ. max. unit collector to emitter voltage v ceo(sus) i c = ? 2.5 a, i b = ? 0.25 a, l = 1 mh ? 100 v collector to emitter voltage v cex(sus) i c = ? 2.5 a, i b1 = ? i b2 = ? 0.25 a, v be(off) = 1.5 v, l = 180 h, clamped ? 100 v collector cutoff current i cbo v cb = ? 100 v, i e = 0 a ? 10 a collector cutoff current i cer v ce = ? 100 v, r be = 50 , t a = 125 c ? 1.0 ma collector cutoff current i cex1 v ce = ? 100 v, v be(off) = 1.5 v ? 10 a collector cutoff current i cex2 v ce = ? 100 v, v be(off) = 1.5 v, t a = 125 c ? 1.0 ma emitter cutoff current i ebo v eb(off) = ? 5.0 v, i c = 0 a ? 10 a dc current gain h fe1 note v ce = ? 2.0 v, i c = ? 0.5 a 100 dc current gain h fe2 note v ce = ? 2.0 v, i c = ? 1.0 a 100 400 dc current gain h fe3 note v ce = ? 2.0 v, i c = ? 3.0 a 60 collector saturation voltage v ce(sat)1 note i c = ? 3.0 a, i b = ? 0.15 a ? 0.3 v collector saturation voltage v ce(sat)2 note i c = ? 4.0 a, i b = ? 0.2 a ? 0.5 v base saturation voltage v be(sat)1 note i c = ? 3.0 a, i b = ? 0.15 a ? 1.2 v base saturation voltage v be(sat)2 note i c = ? 4.0 a, i b = ? 0.2 a ? 1.5 v collector capacitance c ob v cb = ? 10 v, i e = 0, f = 1.0 mhz 110 pf gain bandwidth product f t v ce = ? 10 v, i c = 0.5 a 90 mhz turn-on time t on 0.3 s storage time t stg 1.5 s fall time t f i c = ? 3.0 a, r l = 17 , i b1 = ? i b2 = ? 0.15 a, v cc ? ? 50 v refer to switching time test circuit . 0.4 s note pulse test pw 350 s, duty cycle 2%/pulsed h fe classification marking m l k h fe2 100 to 200 150 to 300 200 to 400 switching time test circuit v in pw pw ? 50 duty cycle 2% v bb ? 5 v v cc ? ? 50 v 10% 90% r l = 17 i b1 i c i b2 i b1 i c t on t stg t f tut i b2 s base current waveform collector current waveform
data sheet d14839ej5v0ds 3 2sa1647,1647-z typical characteristics (t a = 25 c) total power dissipation vs. case temperature derating curve of safe operating area 18 15 12 9 6 3 0 50 100 150 collector current vs. collector to emitter voltage -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0-1-2 i b = 50 ma 45 ma 40 ma 35 ma 25 ma 20 ma 15 ma 10 ma 5 ma 30ma -3 -4 -5 -6 -7 -8 -9 -10 forward bias safe operating area i c(pulse) pw = 1 ms 10 ms dc i c(dc) 10 1.0 0.1 10 100 transient thermal resistance 1000 100 10 1.0 0.1 1 m 10 m 100 m 1 10 100 1000 10000 dc current gain vs. collector current v ce = 2 v pulse test 1000 100 10 -0.01 -0.1 -1 -10 100 80 60 40 20 050 s/b limited dissipation limited 100 150 s/b limited dissipation limited r th(j ? a) = 125 c/w r th (j ? c ) = 6.94 c/w t c = 25 c sin g le p ulse t c = 25 c sin g le p ulse t a = 125 c 25 c ? c total power dissipation p t (w) case temperature t c ( c) i c derating dt (%) case temperature t c ( c) transient thermal resistance r th(j ? c) (t) ( c/w) pulse width pw (s) collector to emitter voltage v ce (v) collector to emitter voltage v ce (v) collector current i c (a) collector current i c (a) collector current i c (a) dc current gain h fe
data sheet d14839ej5v0ds 4 2sa1647,1647-z collector saturation voltage vs. collector current ? 0.01 ? 0.1 ? 1.0 ? 10 ? 100 ? 10 ? 1.0 ? 0.1 base saturation voltage vs. collector current ? 0.1 ? 1 ? 10 ? 10 ? 1 ? 0.1 gain bandwidth product vs. collector current ? 0.03 ? 0.1 t stg t on t f ? 0.3 ? 1 ? 3 ? 10 1000 300 100 30 10 turn on time, storage time and fall time vs. collector current 0.1 1 10 100 10 1.0 0.1 output capacitance vs. collector to base voltage 0.01 0.005 1 10 100 1000 0.1 1000 100 10 4 collector current i c (a) collector current i c (a) collector saturation voltage v ce(sat) (v) gain bandwidth product f t turn-on time t on ( s) fall time t f ( ? i b1 = ? 20 a ? c 25 c ? 40 c t a = ? 40 c 25 c 125 c collector current i c (a)
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