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  300-400v Datasheet PDF File

For 300-400v Found Datasheets File :: 7370    Search Time::1.5ms    
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    AOT29S50 AOTF29S50 AOB29S50

Alpha & Omega Semiconductors
Part No. AOT29S50 AOTF29S50 AOB29S50
OCR Text ...aximum junction-to-ambient a,d 300 65 65 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds j to-263 d 2 pak g d...400v v v gs =10v, i d =14.5a, t j =150c drain-source breakdown voltage i d =250 a, v gs =0v, t j =2...
Description 500V 29A a MOS Power Transistor

File Size 321.77K  /  7 Page

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    IRGP4063DPBF

International Rectifier
Part No. IRGP4063DPBF
OCR Text ...unting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Max. 600 96 48 192 192 96 48 192 20 30 330 170 -55...400V Conditions Ref.Fig 24 CT1 IC = 48A, VCC = 400V, VGE = 15V RG = 10, L = 200H, LS = 150n...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 776.17K  /  10 Page

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    IRGP4068DPBF IRGP4068D-EPBF

IRF[International Rectifier]
Part No. IRGP4068DPBF IRGP4068D-EPBF
OCR Text ... 16 20 30 330 170 -55 to +175 C 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) W V Thermal Resistance Parameter RJC (IGBT) RJC (...400V Conditions Ref.Fig 18 CT1 IC = 48A, VCC = 400V, VGE = 15V RG = 10, L = 200H,TJ = 25C ...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

File Size 323.98K  /  10 Page

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    IXSP20N60B2D1 IXSA20N60B2D1

IXYS Corporation
Part No. IXSP20N60B2D1 IXSA20N60B2D1
OCR Text ... lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering for 10s 260 c symbol tes...400v i c = 16a i c = 32a fig. 9. dependence of turn-off energy loss on i c 0.0 0.2 0.4 0.6 0.8 1.0...
Description High Speed IGBT
   High Speed IGBT

File Size 170.99K  /  6 Page

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    SGS Thomson Microelectronics
Part No. AN534
OCR Text ...ations 4/9 50 100 150 200 250 300 350 400 450 500 20 40 60 80 100 120 140 frequency (khz) lvl peak value (db m v) lvl peak value (db m v) ...400v an534-08.ai figure 7 : connecting the spectrum analyser to the mains iii - measure on mains dur...
Description 4.5W FLYBACK CONVERTER FOR POWER LINE MODEM APPLICATIONS

File Size 93.65K  /  9 Page

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    IDP30E60 IDP30E60-09

INFINEON TECHNOLOGIES AG
Infineon Technologies A...
Part No. IDP30E60 IDP30E60-09
OCR Text ...: v r = 400v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 100 150 200 250 300 350 400 ns 500 t rr 60a 30a 15a 6 typ. reverse recovery charge q rr = f (d i f /d t ) parameter: v r = 400v, t j = 125 c 200 300 400 500 60...
Description 52.3 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
Fast Switching Diode

File Size 256.85K  /  8 Page

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    APTGF90H60T3G

Microsemi Corporation
Part No. APTGF90H60T3G
OCR Text ... (V) 9 50 100 150 200 250 300 350 400 Gate Charge (nC) Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (...400V, VGE = 15V, RG = 1.2 VCE = 400V RG = 1.2 VGE=15V, TJ=125C 50 40 Tj = 125C VCE = 400V RG ...
Description Full - Bridge NPT IGBT Power Module

File Size 237.27K  /  7 Page

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    APTGF90DA60T

MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
Part No. APTGF90DA60T
OCR Text ...5c tc=125c 0 50 100 150 200 250 300 350 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty ...400v r g = 5 ? v ge =15v, t j =25c v ge =15v, t j =125c 50 100 150 200 250 25 50 75 100 125 150 i...
Description 110 A, 600 V, N-CHANNEL IGBT
Boost Chopper - IGBT

File Size 300.26K  /  6 Page

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    Infineon Technologies A...
Part No. IDB23E60 IDP23E60
OCR Text ... v r = 400v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 100 150 200 250 300 350 400 ns 500 t rr 46a 23a 11.5a 6 typ. reverse recovery charge q rr = f (d i f /d t ) parameter: v r = 400v, t j = 125 c 200 3...
Description Fast Switching EmCon Diode
Silicon Power Diodes - 23A EmCon in TO220-2
Silicon Power Diodes - 23A EmCon in TO263

File Size 195.35K  /  9 Page

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