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				Hitachi Semiconductor
Part No.	3SK321
OCR Text	...s. Drain Current 24 20 15 12 Power gain 10 VDS = 4 V VG2S = 3 V f = 900 MHz 10 I D (mA) 20 5 Gate1 to source voltage...968 0.963 0.960 0.956 0.950 0.945 0.941 0.936 0.930 0.924 0.919 ANG. -4.2 -6.1 -7.9 -9.8 -11.5 -13.4...
Description	Silicon N-Channel Dual Gate MOS FET
File Size	57.60K / 10 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BF1105R
OCR Text	...V 2.5 V 20 1.6 V 1.5 V 15 1.4 V 10 1.3 V 2V 1.2 V 5 1.1 V 1.5 V 1V 0 0 2 4 6 VDS (V) 8 0 0 0.5 1 1.5 2 1V 2.5 VG1 (V) 10 20 VG2-...968 0.956 0.937 0.918 0.897 0.878 0.858 0.840 ANGLE (deg) -3.8 -7.5 -14.7 -21.7 -28.8 -35.4 -41.8 -4...
Description	N-channel dual-gate MOS-FETs
File Size	151.80K / 16 Page	View it Online	Download Datasheet

				http:// STMICROELECTRONICS[STMicroelectronics] 意法半导
Part No.	STD2NM60 STD2NM60-1
OCR Text	...e 600 600 30 2 1.26 8 46 0.37 1 15 -65 to 150 150 (1)ISD<2A, di/dt<400A/s, VDD<V(BR)DSS , TJ<TJMAX Unit V V V A A A W W/C kV V/ns C C ...968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 ...
Description	N-CHANNEL 600V - 2.8ohm - 2A DPAK/IPAK Zener-Protected MDmesh?Power MOSFET N-CHANNEL 600V - 2.8ohm - 2A DPAK/IPAK Zener-Protected MDmesh⑩Power MOSFET N-CHANNEL 600V - 2.8ohm - 2A DPAK/IPAK Zener-Protected MDmeshPower MOSFET
File Size	473.21K / 10 Page	View it Online	Download Datasheet

				Xilinx
Part No.	XC18V512
OCR Text	15, 2003 0 Product Specification Features * In-system programmable 3.3V PROMs for configuration of Xilinx FPGAs - Endurance of 20,...968 XC18V00 Solution XC18V02 XC18V04 XC18V04 + XC18V512 2 of XC18V04 3 of XC18V04 4 of XC18V04 5 of ...
Description	IC,SERIAL EEPROM,NOR FLASH,CMOS,TQFP,44PIN,PLASTIC
File Size	202.77K / 21 Page	View it Online	Download Datasheet

				Hitachi Semiconductor NEC
Part No.	3SK299
OCR Text	...+0.1 -0.05 3 4 0.3 +0.1 -0.05 0.15 +0.1 -0.05 (1.3) 1 0.90.1 0.3 0.4 +0.1 -0.05 VDS = 13 V, VG1S = -4 V, VG2S = 0 VDS = 5 V, VG2S = 0, VG1S ...968 0.920 0.952 0.898 0.915 0.879 S11 ANG -3.3 -7.2 -9.3 -13.4 -15.7 -19.1 -22.2 -25.2 28.9 -29.4 -3...
Description	RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD
File Size	52.54K / 6 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc. ETC List of Unclassifed Manufacturers
Part No.	EPA1200A
OCR Text	... Eutectic Attach) -11 -7 -15 -14 4 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12...968 179.4 0.969 178.6 0.969 177.8 0.970 177.1 0.971 176.4 0.971 175.7 0.972 175.0 0.973 174.4 0.973 ...
Description	High Efficiency Heterojunction Power FET
File Size	26.76K / 2 Page	View it Online	Download Datasheet

				Ericsson
Part No.	PTF10020
OCR Text	...6 Efficiency % 60 50 40 - 30 5 -15 20 -25 10 -35 0 960 Gain (dB) Gain 12 Gain (dB) 14 12 10 8 6 4 925 Gain Return Loss (dB) ...968 0.966 0.964 0.963 0.961 0.958 0.956 0.953 0.95 0.946 0.942 0.937 0.933 S21 Ang 176 175.9 175...
Description	125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
File Size	114.39K / 6 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC WJCI[WJ Communication. Inc.] WJ Communications
Part No.	FH101 FH101-G
OCR Text	... 100% Idss 23 21 19 Gain(dB) 17 15 13 11 .5 1 1.5 2 Frequency (GHz) 2.5 3 0 .5 Gain vs. Temperature 5 4 NF (dB) 3 NF vs. Frequency ...968 0.928 0.905 0.868 0.841 0.815 0.780 0.766 0.754 0.754 0.748 -3.940 -22.800 -42.900 -62.100 -7...
Description	High Dynamic Range FET 高动态范围场效应
File Size	173.48K / 4 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXEN60N120 IXEN60N120D1
OCR Text	...A) Ptot TC = 25C TC = 90C VGE = 15 V; RG = 22 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = 900 V; VGE = 15 V; RG = 22 ; TVJ =...968 -0.002 0.130 19.81 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 ...
Description	NPT IGBT 100 A, 1200 V, N-CHANNEL IGBT
File Size	35.22K / 2 Page	View it Online	Download Datasheet

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