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  2.097152 Datasheet PDF File

For 2.097152 Found Datasheets File :: 118    Search Time::1.125ms    
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    意法半导
Part No. IMSA110-G20S
OCR Text ...e, if it is less than -2 21 , (-2097152 10 ) a negative overflow will be gen- erated. in other words, a positive overflow is gen- erated if the result of adding two positive numbers (both msbs = 0) is negative (resulting msb = 1). conversel...
Description Bi-Lobe Standard Metal Shell Nano Offset Connector

File Size 357.69K  /  26 Page

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    Hitachi,Ltd.
Part No. HM5264805F-B60 HM5264805F-A60 HM5264165FTT-75 HM5264405FTT-75 HM5264805FTT-75 HM5264165FLTT-75 HM5264405FLTT-75 HM5264805FLTT-75 HM5264165FLTT-B60 HM5264165FTT-B60 HM5264165FLTT-A60 HM5264805FLTT-A60 HM5264805FTT-A60 HM5264165FTT-A60 HM5264405FLTT-A60 HM5264405FTT-A60 HM5264405FLTT-B60 HM5264805FLTT-B60 HM5264405FTT-B60 HM5264165F-75
OCR Text ...is a 64-mbit sdram organized as 2097152-word 8-bit 4 bank. the hitachi hm5264405f is a 64-mbit sdram organized as 4194304-word 4-bit 4 bank. all inputs and outputs are referred to the rising edge of the clock input. it is pac...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:36; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:36; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
64M LVTTL interface SDRAM 133 MHz/100 MHz

File Size 871.66K  /  67 Page

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    HM5225325F-B60 HM5225645F HM5225645F-B60

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HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. HM5225325F-B60 HM5225645F HM5225645F-B60
OCR Text ...s a 256-Mbit SDRAM organized as 2097152-word x 32-bit x 4-bank. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 108 bump BGA. Features * * * * * * * * * Single chip wide bit solution...
Description 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM

File Size 76.58K  /  16 Page

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    M2S28D20 M2S28D20ATP M2V28D20ATP-10 M2V28D20ATP-75 M2S28D20ATP-75 M2S28D20ATP-10 M2S28D30ATP-75 M2S28D40ATP-75 M2S28D40A

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M2S28D20 M2S28D20ATP M2V28D20ATP-10 M2V28D20ATP-75 M2S28D20ATP-75 M2S28D20ATP-10 M2S28D30ATP-75 M2S28D40ATP-75 M2S28D40ATP-10 M2S28D40ATP A00001 M2S28D30ATP M2V28D40ATP-75 M2V28D30ATP-75
OCR Text ...-bit, M2S28D40ATP is a 4-bank x 2097152-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strobe...
Description 128M Double Data Rate Synchronous DRAM
From old datasheet system

File Size 1,213.46K  /  36 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYB3117800BSJ-70 HYB3117800BSJ-60 HYB3117800BSJ-50 Q67100-Q1148 Q67100-Q1147
OCR Text ...6 MBit dynamic RAM organized as 2097152 words by 8-bits. The HYB 3117800BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the sys...
Description 2M x 8-Bit Dynamic RAM

File Size 258.21K  /  26 Page

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    Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
Part No. M2S28D30ATP-75 M2S28D40ATP M2V28D40ATP-10 M2V28D40ATP-75 M2S28D40ATP-10 M2S28D20ATP-10
OCR Text ...bit, m2s28d40atp is a 4-bank x 2097152-word x 16-bit, double data rate synchronous dram, with sstl_2 interface. all control and address signals are referenced to the rising edge of clk. input data is registered on both edges of data stro...
Description 128M Double Data Rate Synchronous DRAM 128M的双数据速率同步DRAM

File Size 1,220.54K  /  36 Page

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    SIEMENS AG
Part No. Q67100-Q1148
OCR Text ...6 mbit dynamic ram organized as 2097152 words by 8-bits. the hyb 3117800bsj utilizes a submicron cmos silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the s...
Description 2M x 8-Bit Dynamic RAM

File Size 263.37K  /  26 Page

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    HITACHI[Hitachi Semiconductor]
Part No. HM5264805FTT-B60 HM5264165A60 HM5264165B60 HM5264165F HM5264165F-75 HM5264165FLTT-75 HM5264165FLTT-A60 HM5264165FLTT-B60 HM5264165FTT-75 HM5264165FTT-A60 HM5264165FTT-B60 HM5264405F HM5264405FLTT-75 HM5264405FLTT-A60 HM5264405FLTT-B60 HM5264405FTT-75 HM5264405FTT-A60 HM5264405FTT-B60 HM5264805F HM5264805F-75 HM5264805F-A60 HM5264805F-B60 HM5264805FLTT-75 HM5264805FLTT-A60 HM5264805FLTT-B60 HM5264805FTT-75 HM5264805FTT-A60
OCR Text ...is a 64-Mbit SDRAM organized as 2097152-word x 8-bit x 4 bank. The Hitachi HM5264405F is a 64-Mbit SDRAM organized as 4194304-word x 4-bit x 4 bank. All inputs and outputs are referred to the rising edge of the clock input. It is packaged i...
Description 64M LVTTL interface SDRAM 133 MHz/100 MHz

File Size 860.04K  /  67 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M6MGT160S2BVP M6MGB160S2BVP
OCR Text ...3.6V 16M-bits Flash memory is a 2097152 bytes /1048576 words, * Ambient temperature 3.3V-only, and high performance non-volatile memory W version Ta=-20 ~ 85C fabricated by CMOS technology for the peripheral circuit * Package : 48-pin TSOP ...
Description 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

File Size 253.82K  /  30 Page

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