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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5P21045NR1
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| OCR Text |
...DD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two -Tone Measurements 500 mA IDQ = 200 mA 800 mA IRL, INPUT RETURN LOSS (dB) 15.2 15 14.8 Gps, POWER GAIN (dB) 14.6 14.4 14.2 IRL 14 13.8 13.6 13.4 2060 ACPR 2080 2100 2120 2140 2160 2180 2200 IM3 -... |
| Description |
RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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| File Size |
411.71K /
11 Page |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
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| Part No. |
MRF5P21240R6 MRF5P21240
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| OCR Text |
... x 1100 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz, Each Carrier Pea... |
| Description |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
770.91K /
8 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S21045NR1
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| OCR Text |
...DD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two -Tone Measurements 10 Pout, OUTPUT POWER (WATTS) PEP 100 15.2 15 14.8 Gps, POWER GAIN (dB) 14.6 14.4 14.2 14 13.8 13.6 13.4 2060 IM3 ACPR 2080 2100 2120 2140 2160 2180 2200 IRL Gps VDD = 28 Vdc, ... |
| Description |
RF Power Field Effect Transistors
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| File Size |
551.60K /
16 Page |
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it Online |
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Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF5S21090HSR3 MRF5S21090HR3
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| OCR Text |
...DD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing IMD,THIRD ORDER INTERMODULATION DISTORTION (dBc)
-15 -20 -25 -30 -35 -40 -45 -50 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
16 G ps , POWER GAIN (dB)
V... |
| Description |
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
XTAL MTL T/H HC49/U
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| File Size |
374.07K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S21090HSR3 MRF5S21090HR3 MRF5S21090HR3_06 MRF5S21090HR306
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| OCR Text |
...DD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing IMD,THIRD ORDER INTERMODULATION DISTORTION (dBc)
-15 -20 -25 -30 -35 -40 -45 -50 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
16 G ps , POWER GAIN (dB)
V... |
| Description |
RF Power Field Effect Transistors
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| File Size |
396.49K /
12 Page |
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it Online |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3
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| OCR Text |
...Q = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB... |
| Description |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
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| File Size |
578.61K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S21100HSR3 MRF5S21100HR3
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| OCR Text |
...DD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing
15 G ps , POWER GAIN (dB)
IDQ = 1400 mA 1250 mA
14
1050 mA 850 mA
13 650 mA 12 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement,... |
| Description |
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
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| File Size |
388.49K /
12 Page |
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it Online |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
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| OCR Text |
... = 1050 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB... |
| Description |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
561.39K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S21130HSR3 MRF5S21130HR3
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| OCR Text |
...DD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 1 10 100 1000
IRL, INPUT RETURN LOSS (dB) VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 100 1000 Ideal
11.5 11
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| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
379.13K /
12 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S
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| OCR Text |
... = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @... |
| Description |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
395.61K /
12 Page |
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it Online |
Download Datasheet |
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