3.45v pdf Datasheet P10 Full Text Search --- IC-ON-LINE


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3.45v Datasheet PDF File

For 3.45v Found Datasheets File :: 181 Search Time::1.547ms
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				意法半导
Part No.	STP11NM60
OCR Text	... voltage v ds =v gs ,i d = 250a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 5.5a 0.4 0.45 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 5.5a 5....
Description	N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh⑩Power MOSFET
File Size	555.06K / 12 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	B12NM50
OCR Text	...oltage v ds = v gs , i d = 50a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 6a 0.30 0.35 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5...
Description	Search --To STB12NM50
File Size	534.42K / 17 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	D7NB20
OCR Text	...tage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 3.5 a 0.30 0.40 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, ...
Description	Search --To STD7NB20
File Size	451.62K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STD1NC70Z STD1NC70Z-1 STP2NC70ZFP
OCR Text	...tage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 0.7 a 7.3 8.5 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 0.7 a 1.2 s ...
Description	N-CHANNEL 700V 7.3 OHM 1.4A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED POWERMESH III MOSFET
File Size	639.29K / 13 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STB15NM60ND
OCR Text	...tage v ds = v gs , i d = 250 a 345v r ds(on) static drain-source on resistance v gs = 10 v, i d = 7 a 0.27 0.299 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty c...
Description	N-channel Power MOSFET
File Size	621.84K / 19 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STB9NB50T4
OCR Text	...age v ds = v gs i d = 250 a 345v r ds(on) static drain-source on resistance v gs = 10 v i d = 4.3 a 0.75 0.85 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs =10 v 8.6 a symbol parameter test conditions min....
Description	N-CHANNEL 500V - 0.75 OHM - 8.6A D2PAK STRIPFET POWER MOSFET
File Size	280.63K / 8 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	W15NB50
OCR Text	...voltage v ds =v gs i d =250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d = 7.5 a 0.33 0.36 w w i d(o n) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 14.6 a dynamic symbol parameter test conditions min. ty...
Description	Search --To STW15NB50
File Size	145.64K / 9 Page	View it Online	Download Datasheet

				ST MICROELECTRONICS
Part No.	P6NB80FP
OCR Text	...oltage v ds =v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d =3a 1.6 1.9 w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 5.7 a dynamic symbol parameter test conditions min. typ. max...
Description	Search --To STP6NB80FP
File Size	230.57K / 6 Page	View it Online	Download Datasheet

For 3.45v Found Datasheets File :: 181 Search Time::1.547ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |