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4 194 304 Datasheet PDF File

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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4C560838C-TCD3 K4C561638C-TCD3 K4C561638C-TCD4000 K4C561638C-TCDA K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD4
OCR Text	...r Up Sequence and Power Down(CL=4) Timing Diagrams Version 0.3 (Mar. / 23 / 2002) - The product name is changed to Network RAM - Added Speed...194,304 words x4 banks x 16 K4C560838C-TC : 8,388,608 words x4 banks x 8 * Power supply voltage Vdd ...
Description	256Mb Network-DRAM
File Size	877.29K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
Part No.	K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4D551638F K4D551638F-TC K4D551638F-TC60 K4D551638F-TC40
OCR Text	4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.7 June 2004 Samsung Electronics reserves the right to change products or ...194,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous fe...
Description	256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
File Size	204.60K / 16 Page	View it Online	Download Datasheet

				ATMEL[ATMEL Corporation]
Part No.	AT25F4096 AT25F4096W-10SU-2.7
OCR Text	...ite Protection - Protect 1/8, 1/4, 1/2 or Entire Array Write Protect (WP) Pin and Write Disable Instructions for both Hardware and Software ...194,304 bits of serial reprogrammable Flash memory organized as 524,288 words of 8 bits each. The de...
Description	SPI SERIAL MEMORY 4M
File Size	280.82K / 17 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
Part No.	HM628511HC HM628511HCJP-10 HM628511HCLJP-10
OCR Text	...ion The HM628511HC Series is a 4-Mbit high speed static RAM organized 512-k word x 8-bit. It has realized high speed access time by employi...194,304 bits) VCC VSS CS Column I/O Input data control Column decoder CS WE CS (LSB) ...
Description	4M High Speed SRAM (512-kword x 8-bit) Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 35V; Case Size: 16x35.5 mm; Packaging: Bulk 4分高速SRAM12 - KWord的8位） 4M High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位）
File Size	66.38K / 14 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HM628511HI HM628511HJPI-12 HM628511HJPI-15
OCR Text	...ion The HM628511HI Series is a 4-Mbit high speed static RAM organized 512-k word x 8-bit. It has realized high speed access time by employi...194,304 bits) VCC VSS CS I/O1 . . . I/O8 Column I/O Input data control Column decoder CS WE...
Description	4M High Speed SRAM (512-kword x 8-bit)
File Size	62.69K / 13 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	HM628511H HM628511HJP-10 HM628511HJP-12 HM628511HJP-15 HM628511HLJP-10 HM628511HLJP-12 HM628511HLJP-15
OCR Text	...tion The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word x 8-bit. It has realized high speed access time by employi...194,304 bits) VCC VSS CS I/O1 . . . I/O8 Column I/O Input data control Column decoder CS WE...
Description	4M High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位）
File Size	68.50K / 13 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6R4016C1C-C K6R4016C1C-C10 K6R4016C1C-C12 K6R4016C1C-C15 K6R4016C1C-E K6R4016C1C-E10 K6R4016C1CE12 K6R4016C1CE15 K6R4016C1C-I K6R4016C1C-I10 K6R4016C1C-I12 K6R4016C1C-I15
OCR Text	... Extended temperature range Rev.4.0 Delete 20ns speed bin Sep. 24. 2001 Final The attached data sheets are prepared and approved by SAMSU...194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R401...
Description	256Kx16 Bit High Speed Static RAM(5V Operating).
File Size	183.08K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6R4016C1D K6R4016C1D-JC K6R4016V1D-JC K6R4004C1D K6R4004C1D-JC K6R4004V1D K6R4004V1D-JKCI K6R4008C1D K6R4008C1D-JC K6R4008V1D-JC K6R4016V1D K6R4008V1D
OCR Text	...0 July 2004 K6R4004V1D 1M x 4 Bit (with OE)High-Speed CMOS Static RAM FEATURES * Fast Access Time 8,10ns(Max.) * Low Power Dissipation...194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R40...
Description	1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM3.3V的）。在商用和工业温度范围运 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM.3V的）。在商用和工业温度范围运 861 SOLID STATE RELAYS RoHS Compliant: Yes
File Size	216.37K / 9 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K6R4016V1 K6R4016V1D K64004C1D
OCR Text	...acteristics and timing diagram. 4. Correct Read Cycle time waveform(2). July, 09, 2002 Final The attached data sheets are prepared ...194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R40...
Description	1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
File Size	175.72K / 9 Page	View it Online	Download Datasheet

				SHARP[Sharp Electrionic Components]
Part No.	LH28F004SU-Z1
OCR Text	...8 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 ...194,304 bit) block erasable non-volatile random access memor y organized as 512K x 8. The LH28F004SU...
Description	4M (512K 】 8) Flash Memory 4M (512K 8) Flash Memory
File Size	179.96K / 32 Page	View it Online	Download Datasheet

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