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For 4.50h Found Datasheets File :: 1458 Search Time::3.859ms
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				Sanyo
Part No.	2SC3086
OCR Text	...KT)/4207KI/3095MW, TS No.1010-1/4 2SC3086 Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Base Breakdown Voltage Collec...50H VCEX(sus)1 IC=3A, IB1=0.6A, L=200H, IB2=-0.6A, clamped VCEX(sus)2 IC=0.6A, IB1=0.12A, L=200H, I...
Description	NPN Triple Diffused Planar Silicon Transistor
File Size	95.57K / 4 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	2SC3795 2SC3795A
OCR Text	...(TC=25C) 7.50.2 3.10.1 4.20.2 High-speed switching High collector to base voltage VCBO Low collector to emitter saturation volta...50H IC/IB=5 (IB1=-IB2) TC=100C 2SC3795, 2SC3795A Reverse bias ASO measuring circuit L coil IB1 ...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	61.99K / 3 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9K1208U0A K9K1208U0A K9K1208U0C
OCR Text	...WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48-pin TSOP1 Standard Type 12mm x 20mm 48 47 ...50h 90h FFh 80h 60h 70h (1) 2nd. Cycle 10h D0h - Acceptable Command during Busy O O ...
Description	64M x 8 Bit / 32M x 16 Bit NAND Flash Memory TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存 64M x 8 Bit NAND Flash Memory Data Sheet
File Size	356.63K / 27 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 K9K1216D0C
OCR Text	...e excluding spare area is used. 4. Updated operation for tRST timing - If reset command(FFh) is written at Ready state, the device goes into...50h 90h FFh 80h 60h 70h (1) 2nd. Cycle 10h D0h - Acceptable Command during Busy O O ...
Description	64M x 8 Bit / 32M x 16 Bit NAND Flash Memory 64M x 8 Bit NAND Flash Memory
File Size	351.33K / 26 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1G08U0B K9K1G08B0B K9K1G08R0B
OCR Text	...anged -1.7V~1.95V ->1.65V~1.95V 4. 2.7V device is added 5. Multi plane operation and Copy-Back Program are not supported with 1.8V device. ...50h 90h FFh 80h 80h (2) (2) (1) 2nd. Cycle 10h 11h 8Ah 8Ah D0h D0h - 3rd. Cycle 10h 11h - ...
Description	128M x 8 Bit NAND Flash Memory
File Size	945.71K / 41 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1G08U0M-YCB0 K9K1G08U0M-YIB0
OCR Text	...n - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (512 + 16)bit x8bit multipled by eight planes * Automatic Program and Er...50h 90h FFh 80h 80h (2) 2nd. Cycle 10h 11h 8Ah 8Ah D0h D0h - 3rd. Cycle 10h 11h - Acceptab...
Description	128M x 8 Bit NAND Flash Memory
File Size	465.75K / 37 Page	View it Online	Download Datasheet

				Linear Technology
Part No.	LTC1574-5 LTC1574-3.3 LTC1574 LT1574 LTC1574CS LTC1574CS-3.3 LTC1574CS-5
OCR Text	...BOUT LTC1574-5 VOUT IPGM GND 2, 4, 13, 15 SW + 5V 175mA 100F* 10V * AVX TPSD226K035 ** AVX TPSD107K010 COILTRONICS CTX100-4 157...50H VOUT = 5V IPGM = VIN COIL = CTX50-4 1 10 100 LOAD CURRENT (mA) 400 1574 * TPC02 EFFICIENCY (...
Description	From old datasheet system High Efficiency Step-Down DC/DC Converters with Internal Schottky Diode
File Size	224.23K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
Part No.	M5M28F101AFP
OCR Text	... A2 A1 A0 D0 D1 D2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC WE WRITE ENABLE I...50H) is written to the command latch in first write cycle, and the address and data to be programmed...
Description	1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
File Size	95.52K / 10 Page	View it Online	Download Datasheet

				http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	M5M29GB160BVP M5M29GB160BVP-80 M5M29GT160BVP M5M29GT160BVP-80 E99001_A M5M29GB160BWG M5M29WB160BVP M5M29WT160BVP M5M29GB161BVP M5M29WT161BWG M5M29GB161BWG M5M29GT160BWG M5M29GT161BVP M5M29GT161BWG M5M29WB160BWG M5M29WB161BVP M5M29WB161BWG M5M29WT160BWG M5M29WT161BVP
OCR Text	...A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 160BVP A16 BYTE...50H) The Erase Status, Program Status and Block Status bits are set to "1"s by the Write State Machi...
Description	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY From old datasheet system 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
File Size	226.99K / 25 Page	View it Online	Download Datasheet

				http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	M5M29GB M5M29GB161BWG M5M29GT161BWG E99002_A M5M29WT161BWG M5M29GB160BVP M5M29GB160BWG M5M29GB161BVP M5M29GT160BVP M5M29GT160BWG M5M29GT161BVP M5M29WB160BVP M5M29WB160BWG M5M29WB161BVP M5M29WB161BWG M5M29WT160BVP M5M29WT160BWG M5M29WT161BVP M5M29T161BWG
OCR Text	...TION (TOP VIEW) 8.5mm 6 5 4 3 2 1 A13 A14 A15 A11 A10 A8 WE# A9 WP2# WP1# RP# NC A18 A19 A17 A6 A7 A5 A3 A4 A2 ...50H) The Erase Status, Program Status and Block Status bits are set to "1"s by the Write State Machi...
Description	16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory From old datasheet system 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY CMOS 3.3V-only block erase flash memory
File Size	198.45K / 23 Page	View it Online	Download Datasheet

For 4.50h Found Datasheets File :: 1458 Search Time::3.859ms
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