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  4.897 Datasheet PDF File

For 4.897 Found Datasheets File :: 828    Search Time::1.468ms    
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    SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STH15NB50FI STW15NB50 STH15NB50 4867 W15NB50 STW15NB50FI
OCR Text ...5NB50FI 500 500 30 14.6 9.2 58.4 190 0.64 4 4000 -65 to 150 150 10.5 6.6 58.4 80 1.52 Uni t V V V A A A W W/ C V/ ns V o o o C C 1/9...897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.6...
Description N-CHANNEL 500V - 0.33W - 14.6A -T0- 247/ISOWATT218 PowerMESH MOSFET
N-CHANNEL 500V - 0.33 - 14.6A -T0- 247/ISOWATT218 PowerMESH TM MOSFET
N-CHANNEL Power MOS MOSFET
From old datasheet system
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

File Size 108.93K  /  9 Page

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    Philips
Part No. BFC505 BFC505/T1
OCR Text ...505 PINNING - SOT353 PIN 1 2 3 4 5 SYMBOL b2 e1 b1 c1/e2 c2 base 2 emitter 1 base 1 collector 1/emitter 2 collector 2 DESCRIPTION 5 4...897 UNIT aA - - V mA fA - - - V mA aA - A - eV - fF mV - ps - V mA deg fF mV - - ns F mV - - ha...
Description TRANSISTOR NPN HF
NPN wideband cascode transistor

File Size 61.14K  /  11 Page

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    STMicro
Part No. BU808DFI 4519
OCR Text ... Resistance Junction-case Max 2.4 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO V ...897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.6...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON
From old datasheet system

File Size 70.32K  /  7 Page

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    PD57002 PD57002S

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STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. PD57002 PD57002S
OCR Text ...ure Parameter Value 65 20 0.25 4.75 165 -65 to +150 Unit V V A W C C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 20 C/W ...897 0.894 0.896 0.904 0.914 0.920 0.929 0.937 0.934 0.931 0.938 0.941 0.941 0.943 0.940 0.943 0.944 ...
Description RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY

File Size 129.89K  /  16 Page

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    STMicro
Part No. ST1802HI 5949
OCR Text ...mperature Value 1500 600 7 8 15 4 50 -65 to 150 150 Uni t V V V A A A W o o C C May 1999 1/6 ST1802HI THERMAL DATA R t hj-ca ...897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.6...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
From old datasheet system

File Size 64.26K  /  6 Page

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    STMicro
Part No. BUH315D 4500
OCR Text ... IB = 1 A V CE = 5 V V CE = 5 V 4 2.5 1.8 200 2.7 350 Min. Typ . Max. 200 300 1.5 1.5 9 Un it A mA V V T j = 100 C o ts tf ts tf ...897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.6...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
From old datasheet system

File Size 69.66K  /  7 Page

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    意法半导
STMicro
Part No. BUH315 4499
OCR Text ... A IC = 3 A IB2 = 1.5 A 2.4 200 s ns s ns f = 15625 Hz IB2 = -1.5 A V c eflybac k = 1050 sin 106 t V 5 f = 31250 Hz IB2 = -1....897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.6...
Description High Voltage Fast-Switching NPN Power Transistor(高电压快速开关NPN功率晶体
From old datasheet system

File Size 92.42K  /  7 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. EGN030MK
OCR Text ...-2.0 -350 46.5 60 12.0 3.0 -3.5 4.0 Unit V V dBm % dB oC/W Edition 1.0 June 2005 1 EGN030MK High Voltage - High Power GaN-HEM...897 -23.0 0.893 -25.9 0.877 -28.7 0.869 -31.5 0.868 -34.6 0.868 -37.8 0.864 -40.8 0.873 -44.2 0.884 ...
Description High Voltage - High Power GaN-HEMT

File Size 188.40K  /  3 Page

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    FLC057WG

Eudyna Devices Inc
Part No. FLC057WG
OCR Text ...gate currents should not exceed 4.4 and -0.25 mA respectively with gate resistance of 1000. 3. The operating channel temperature (Tch) shoul...897 .889 .881 .869 .847 .816 .787 .740 ANG -47.9 -85.1 -129.5 -151.8 -164.8 -176.2 171.6 159.0 1...
Description C-Band Power GaAs FET

File Size 86.42K  /  4 Page

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    FLC157XP

Eudyna Devices Inc
Part No. FLC157XP
OCR Text ... -1.5V -2.0V 0 50 100 150 200 2 4 6 8 10 Total Power Dissipation (W) 10 8 6 4 2 Case Temperature (C) Drain-Source Voltage (V) ...897 .903 .907 .912 ANG -25.9 -98.4 -134.6 -159.5 -169.8 -176.3 178.9 174.8 171.2 167.8 164.6 161...
Description GaAs FET & HEMT Chips

File Size 55.15K  /  4 Page

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