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31030 04166 JMB361 CS5012A D13002 585CM RA759 PTXA6M
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  45 60 Datasheet PDF File

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    HYB514175BJ-60 HYB514175BJ-55 HYB514175BJ-50 Q67100-Q2072 Q67100-Q2073 HYB514175BJ-50- Q67100-Q2100

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB514175BJ-60 HYB514175BJ-55 HYB514175BJ-50 Q67100-Q2072 Q67100-Q2073 HYB514175BJ-50- Q67100-Q2100
OCR Text ...10 14 12 - - 10k 10k - - - - 45 30 ns ns ns ns ns ns ns ns ns ns Semiconductor Group 6 1998-10-01 HYB 514175BJ-50/-55/-60 256k x 16 EDO-DRAM AC Characteristics (cont'd)5, 6 TA = 0 to 70 C; VSS = 0 V; VCC = 5 V 10 %, tT...
Description 256k x 16 Bit EDO DRAM 5 V 50 ns
256k x 16 Bit EDO DRAM 5 V 60 ns
256k x 16 Bit EDO DRAM 5 V 55 ns
256k x 16-Bit EDO-DRAM

File Size 176.03K  /  22 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYB3164805L-60 HYB3164805L-50 HYB3164805T-60 HYB3164805T-50 HYB3164805J-60 HYB3164805J-50 HYB3165805TL-60 HYB3164805J HYB3164805TL-50 HYB3164805TL-60 HYB3165805J-50 HYB3165805J-60 HYB3165805T-50 HYB3165805T-60 HYB3165805TL-50
OCR Text ...tREF 84 30 50 8 0 8 0 8 12 10 8 45 5 1 - - - 50 128 64 - - 100k 10k - - - - 37 25 104 40 60 10 0 10 0 10 14 12 10 50 5 1 - - - - 100k 10k - - - - 45 30 - - - 50 128 64 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms 7 Read Cycle Access ...
Description 8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)

File Size 474.88K  /  32 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYB3164405L-60 HYB3164405L-50 HYB3164405T-60 HYB3164405T-50 HYB3164405J-60 HYB3164405J-50 HYB3165405J-60 HYB3165405J-50 HYB3165405TL-60 HYB3164405J HYB3164405TL-50 HYB3164405TL-60 HYB3165405T-50 HYB3165405T-60 HYB3165405TL-50
OCR Text ...tREF 84 30 50 8 0 8 0 8 12 10 8 45 5 1 - - - 50 128 64 - - 100k 10k - - - - 37 25 104 40 60 10 0 10 0 10 14 12 10 50 5 1 - - - - 100k 10k - - - - 45 30 - - - 50 128 64 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms 7 Read Cycle Access ...
Description 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)

File Size 471.24K  /  32 Page

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    SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYM324000GD-60 HYM324000GD-50
OCR Text ...1 A8 NC DQ15 PIN 37 39 41 43 45 47 49 51 53 55 57 59 61 63 65 67 69 71 NAME DQ16 VSS CAS2 CAS1 NC WRITE DQ18 DQ20 DQ22 NC DQ25 DQ28 VC...60 62 64 66 68 70 72 NAME DQ17 CAS0 CAS3 RAS0 NC NC DQ19 DQ21 DQ23 DQ24 DQ26 DQ27 DQ29 DQ31 PD2 P...
Description 4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE 4M X 32 FAST PAGE DRAM MODULE, 60 ns, ZMA72
CAP 0.5PF 50V /-0.2PF THIN-FILM SN96/AG4/NI 30PPM TR-7-PA
4M x 32 Bit DRAM Module (SO-DIMM)
-4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE

File Size 26.21K  /  6 Page

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    Pasternack Enterprises, Inc.
Part No. PE7221-60
OCR Text ...r, watts 100 maximum vswr 1.45:1 frequency 1 range, ghz dc to 2 vswr 1.2:1 attenuation accuracy, db 1.5 frequency 2 range, ghz ...60 db fixed attenuator, sma female to sma male directional rated to 100 watts up to 6 ghz click the...
Description 60 dB Fixed Attenuator, SMA Female To SMA Male Directional Rated To 100 Watts Up To 6 GHz

File Size 379.06K  /  3 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB314400BJ-60 HYB314400BJ-50 HYB314400BJ-50-
OCR Text ...rsion - - - - 70 60 mA 50 45 2, 3, 4 Semiconductor Group 5 1998-10-01 HYB 314400BJ-50/-60 3.3 V 1M x 4 DRAM DC Characteristics (cont'd) TA = 0 to 70 C, VSS = 0 V, VCC = 3.3 V 0.3 V, tT = 5 ns Parameter Standby VCC...
Description 1M x 4 Bit FPM DRAM 3.3 V 60 ns
-1M x 4-Bit Dynamic RAM

File Size 124.48K  /  25 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HYB314175BJ-60 HYB314175BJ-55 HYB314175BJ-50 HB314175 Q67100-Q2149 HYB314175BJ-50- Q67100-Q2148
OCR Text ... 94 35 55 8 0 8 0 8 12 10 13 45 5 1 - - - - 10k 10k - - - - 43 30 - - - 50 16 128 104 40 60 10 0 10 0 10 14 12 15 50 5 1 - - - - 10k 10k - - - - 45 30 - - - 50 16 128 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms 7 Read...
Description 256k x 16 Bit EDO DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
From old datasheet system

File Size 1,305.55K  /  24 Page

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    Pasternack Enterprises, Inc.
Part No. PE7213-60
OCR Text ...r, watts 100 maximum vswr 1.45:1 frequency 1 range, ghz dc to 2 vswr 1.2:1 attenuation accuracy, db 1.5 frequency 2 range, ghz ...60 db fixed attenuator, n male to n female directional rated to 100 watts up to 6 ghz click the fol...
Description 60 dB Fixed Attenuator, N Male To N Female Directional Rated To 100 Watts Up To 6 GHz

File Size 379.52K  /  3 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM5116400D-60 MSM5116400D-50TS-K MSM5116400D-60SJ MSM5116400D-50SJ
OCR Text ... mode cycle time t pc 35 ? 40 ? 45 ? ns fast page mode read modify write cycle time t prwc 76 ? 85 ? 100 ? ns access time from ras t rac ? 50 ? 60 ? 70 ns 4,5,6 access time from cas t cac ? 13 ? 15 ? 20 ns 4,5 access time from column addres...
Description 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 4194304字4位动态随机存储器:快速页面模式型

File Size 162.98K  /  14 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB3165405BTL-60 HYB3165405BTL-50 HYB3165405BTL-40 HYB3165405BT-60 HYB3165405BT-50 HYB3165405BT-40 HYB3165405BJ-60 HYB3165405BJ-50 HYB3165405BJ-40 HYB3164405BTL-60 HYB3164405BTL-50 HYB3164405BTL-40 HYB3164405BT-60 HYB3164405BT-50 HYB3164405BT-40 HYB3164405BJ-60 HYB3164405BJ-50 HYB3164405BJ-40 HYB3164405BJ
OCR Text ...tHPC=tHPC min.) ICC4 100 65 45 100 65 45 1 200 mA mA 2) 3) 4) Standby Current (RAS=CAS= Vcc-0.2V) ICC5 ICC5 ICC6 1 200 mA...60 ns version (RAS, CAS cycling: tRC = tRC min.) 135 110 90 85 70 60 400 mA mA 2) 4) ...
Description 16M x 4 Bit 4k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)

File Size 301.28K  /  29 Page

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