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MACOM[Tyco Electronics]
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Part No. |
PH2729-150 PH2729-150M
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OCR Text |
...8, 2.9 GHz VCC = 38 V, PIN = 27.5 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz Min 65 150 8.3 38 10 Max 7.5 0.4 60 2:1 1.5:1 Units V mA C/W W dB % dB dBc -
Specifica... |
Description |
Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz/ 100ms Pulse/ 10% Duty Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz 100ms Pulse 10% Duty Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz, 100ms Pulse, 10% Duty
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File Size |
79.05K /
2 Page |
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GSI Technology, Inc.
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Part No. |
GS881E36AD-150 GS881E36AT-225I GS881E36AT-225T GS881E18AD-150T GS881E18AD-250IT GS881E18AD-250T GS881E36AD-133IT GS881E36AD-200IT GS881E32AD-250I GS881E32AD-250IT GS881E36AT-166I GS881E18AD-133
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OCR Text |
...k l m n p r 1 2 3 4 5 6 7 8 9 10 11 10 9 8 7 6 5 4 3 2 a1 top a1 bottom 1.0 1.0 10. 1.0 1.0 14. 130.0 150.0 a b 0.20(4 ?0.10 ?0.25 c c a b m m ?0.40~0.50 c seating 0.15 c 0.25~0.... |
Description |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 7.5 ns, PBGA165 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 6 ns, PQFP100 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 7.5 ns, PBGA165 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 5.5 ns, PBGA165 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 8.5 ns, PBGA165 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 6.5 ns, PBGA165 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PBGA165 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 7 ns, PQFP100 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 8.5 ns, PBGA165
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File Size |
658.65K /
37 Page |
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GSI Technology, Inc.
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Part No. |
GS88136AD-150
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OCR Text |
...ly voltage v bb v cc ?1.0 to 16.5 ?1.0 to 6.0 v v digital inputs ?1.0 to 6.0 v steady state output current 100 ma forced injection current ...150 c storage temperature range (t stg ) ?65 to 150 c ja (thermal resistance junction?to?ambien... |
Description |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
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File Size |
87.95K /
10 Page |
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it Online |
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GSI Technology, Inc.
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Part No. |
GS84118AGT-150 GS84118AT-100I
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OCR Text |
5 v i/o tqfp, bga commercial temp industrial temp rev: 1.02 4/2005 1/20 ? 2001, gsi technology specifications cited are subject to change ...150 -133 -100 pipeline 3-1-1-1 t cycle t kq i dd 6.0 ns 3.5 ns 310 ma 6.6 ns 3.8 ns 275 ma 7.5 ns 4.... |
Description |
256K x 18 Sync Cache Tag 256K X 18 CACHE TAG SRAM, 10 ns, PQFP100 256K x 18 Sync Cache Tag 256K X 18 CACHE TAG SRAM, 12 ns, PQFP100
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File Size |
404.94K /
20 Page |
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it Online |
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Shenzhen Taychipst Electronic Co., Ltd
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Part No. |
SBYV28-150 SBYV28-200 SBYV28-50
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OCR Text |
...inches and (millimeters) 0.210 (5.3) 0.190 (4.8) dia. 0.052 (1.32) 0.048 (1.22) dia. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) min....150 sbyv28-200 units maximum repetitive peak reverse voltage v rrm 50 100 150 200 v maximum rms volt... |
Description |
Soft Recovery Ultrafast Plastic Rectifier
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File Size |
8,950.83K /
2 Page |
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GSI Technology, Inc.
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Part No. |
GS8160E18BGT-150 GS8160E32BGT-150I GS8160E32BT-150 GS8160E32BGT-200I GS8160E36BGT-250 GS8160E18BT-200T
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OCR Text |
5 v or 3.3 v v dd 2.5 v or 3.3 v i/o 100-pin tqfp commercial temp industrial temp rev: 1.05a 1/2011 1/23 ? 2004, gsi technology specificat...150 unit pipeline 3-1-1-1 t kq tcycle 2.5 4.0 3.0 5.0 3.8 6.7 ns ns curr (x18) curr (x32/x36) 29... |
Description |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100 1M X 18 CACHE SRAM, 6.5 ns, PQFP100
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File Size |
464.16K /
23 Page |
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it Online |
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