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AD[Analog Devices]
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| Part No. |
AD8348XXX AD8348 AD8348-EVAL
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| OCR Text |
...uency 50-1000 MHz (3dB IF BW of 500mhz driven from Rs=200ohms) Demodulation Bandwidth 60MHz Linear-in-dB AGC Range 45dB Third Order Intercep...1ghz (LOIP/LOIN 2GHz, singleended)
dBm mVp-p MHz MHz deg RMS dB mA
Rev. PrF
2/11/03
-3-... |
| Description |
50-1000 MHz Quadrature Demodulator
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| File Size |
772.07K /
13 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
CA3102_05 CA3102 CA3102E CA3102M CA3102MZ
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| OCR Text |
...or Low Power Applications Up to 500mhz
The CA3102 consists of two independent differential amplifiers with associated constant current tran...1ghz. These features make the CA3102 useful from DC to 500mhz. Bias and load resistors have been omi... |
| Description |
Dual High Frequency Differential Amplifier For Low Power Applications Up to 500mhz
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| File Size |
265.88K /
11 Page |
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it Online |
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SEME-LAB[Seme LAB]
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| Part No. |
D1013UK
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| OCR Text |
...SILICON DMOS RF FET 20W - 28V - 500mhz SINGLE ENDED
FEATURES
* SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
* SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * USEFUL PO AT 1ghz
DP
PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN
DIM... |
| Description |
METAL GATE RF SILICON FET
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| File Size |
229.60K /
6 Page |
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it Online |
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SEME-LAB[Seme LAB]
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| Part No. |
D1201UK D1201
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| OCR Text |
...LICON DMOS RF FET 10W - 12.5V - 500mhz SINGLE ENDED
FEATURES
* SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
* SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * USEFUL PO AT 1ghz
DP
PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN
DIM... |
| Description |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500mhz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500mhz,单端) METAL GATE RF SILICON FET
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| File Size |
14.78K /
2 Page |
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it Online |
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SEME-LAB[Seme LAB] TT electronics Semelab Limited
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| Part No. |
D1202UK D1202
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| OCR Text |
...LICON DMOS RF FET 20W - 12.5V - 500mhz SINGLE ENDED
FEATURES
* SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
* SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * USEFUL PO AT 1ghz
DP
PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN
DIM... |
| Description |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-500mhz,Single Ended)(镀金多用DMOS射频硅场效应20W-12.5V-500mhz,单端)
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| File Size |
14.81K /
2 Page |
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it Online |
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SEME-LAB[Seme LAB]
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| Part No. |
D1203UK
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| OCR Text |
...LICON DMOS RF FET 30W - 12.5V - 500mhz SINGLE ENDED
FEATURES
* SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
* SUITABLE FOR...1ghz * LOW NOISE * HIGH GAIN - 10 dB MINIMUM
Tol. 0.005 0.005 5 0.005 0.005 0.005 0.005 REF 0.001... |
| Description |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(30W-12.5V-500mhz,Single Ended)(镀金多用DMOS射频硅场效应30W-12.5V-500mhz,单端) METAL GATE RF SILICON FET
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| File Size |
15.94K /
2 Page |
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it Online |
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ICST[Integrated Circuit Systems]
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| Part No. |
ICS85311AMT ICS85311 ICS85311AM
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| OCR Text |
...e 48 All parameters measured at 500mhz unless noted otherwise. NOTE 1: Measured from the differential input crossing point to the differential output crossing point. NOTE 2: Defined as skew between outputs at the same supply voltage and wit... |
| Description |
Low Skew, 1-to-2 Differential-to-2.5V/3.3V ECL/LVPECL Fanout Buffer
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| File Size |
133.77K /
13 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
KH104
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| OCR Text |
...Bm, 100MHz 10dBm, 100MHz 100MHz 500mhz 10Hz to 1200MHz 100MHz 500mhz note 2 note 2 note 3 note 3 no load 1KHz
non-inverting gain (note 1)...1ghz frequency range. Use of microstripline is recommended for all signal-carrying paths and low res... |
| Description |
DC to 1.1ghz Linear Amplifier
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| File Size |
238.65K /
7 Page |
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it Online |
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