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Yageo, Corp.
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Part No. |
06032E103Z8BP0D 08052E103Z9BP0D 06032E103Z8B30D 08052E103Z9B20D 06032E103Z8B20D 12062E103Z9B20D
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OCR Text |
... z = ? 20%/+80% 8 = 25v 9 = 50v b = nisn 2 = 180 mm; 7" paper 3 = 330 mm; 13" paper b = 180 mm; 7" blister f = 330 mm; 13" blister ...s to the line joining the terminations and in a plane parallel to the substrate no visible damage... |
Description |
CAPACITOR, CERAMIC, MULTILAYER, 25 V, Z5U, 0.01 uF, sURFACE MOUNT, 0603 CHIP, LEAD FREE CAPACITOR, CERAMIC, MULTILAYER, 50 V, Z5U, 0.01 uF, sURFACE MOUNT, 0805 CHIP, LEAD FREE CAPACITOR, CERAMIC, MULTILAYER, 50 V, Z5U, 0.01 uF, sURFACE MOUNT, 1206 CHIP, LEAD FREE
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File Size |
128.25K /
10 Page |
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NXP Semiconductors N.V.
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Part No. |
PsMN013-100Ps NXPsEMICONDUCTORsN.V.-PsMN013-100Ps
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OCR Text |
...rge v gs =10v; i d =25a; v ds =50v; see figure 15 ; see figure 14 -17-nc
psmn013-100ps all information provided in this document is su...s non-repetitive drain-source avalanche energy v gs =10v; t j(init) =25c; i d =68a; v sup 100 v;... |
Description |
N-channel 100V 13.9m standard level MOsFET in TO220. PsMN013-100Ps<sOT78 (TO-220AB)|<<http://www.nxp.com/packages/sOT78.html<1<Always Pb-free,;
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File Size |
195.92K /
15 Page |
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NXP Semiconductors N.V.
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Part No. |
PsMN4R3-100Ps PsMN4R3-100Ps-15
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OCR Text |
...arge v gs =10v; i d =75a; v ds =50v; see figure 14 ; see figure 15 -49-nc q g(tot) total gate charge - 170 - nc avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs =10v; t j(init) =25c; i d = 120 a; v sup ... |
Description |
N-channel 100 V 4.3 mΩ standard level MOsFET in TO-220 PsMN4R3-100Ps<sOT78 (sOT78)|<<http://www.nxp.com/packages/sOT78.html<1<,;
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File Size |
206.35K /
15 Page |
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Price and Availability
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