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    MILL-MAX MFG CORP
Part No. 351-90-111-00-005000 351-90-111-00-004000
OCR Text 0000'>6 - 9 2 2 - 0000'>6 0 0 0 59 series 351 or dering inf ormation series 351...003 0,40000'>6 / 0,0000'>64 solder t ails 351-xx-1_ _-00-003000 series 351...009 0,40000'>6 / 0,40000'>6 solder t ails 351-xx-1_ _-00-009000 series 351...004 ...
Description SIP11, IC SOCKET

File Size 152.30K  /  1 Page

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    RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. RJK1525DPS-00-T2 RJK1525DPS
OCR Text ...atings 150 30 17 50 17 50 17 21.0000'>6 30 4.17 150 -55 to +150 Unit V V A A A A A mJ W C/W C C Rev.2.00 Feb 08, 2007 page 1 of 0000'>6 RJK1525DPS Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate volt...
Description 17 A, 150 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220CFM, 3 PIN
Silicon N Channel MOS FET High Speed Power Switching
1 A low VF MEGA Schottky barrier rectifier, SOD128 (FlatPower), Reel Pack, SMD 通道场效应晶体管高速电源开
1 A low VF MEGA Schottky barrier rectifier, SOD123W (SOD2 FlatPower), Reel Pack, SMD 通道场效应晶体管高速电源开

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    Renesas Electronics, Corp.
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
Part No. RJK4012DPE-00-J3 RJK4012DPE
OCR Text ...44 0.2 10.2 0.3 (1.4) 8.0000'>6 0.3 + 0.3 - 0.5 10.0 (1.5) (1.5) 2.49 0.2 0.2 0.1 + 0.1 - 7.8 7.0 2.2 1.37 0.2 ...00-J3 Quantity 1000 pcs Taping Shipping Container REJ03G1575-0100 Rev.1.00 Aug 08, 2007 Page 3 of...
Description Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开

File Size 70.57K  /  4 Page

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    PL-SLR-00-SG3-CX

JDS Uniphase Corporation
Part No. PL-SLR-00-SG3-CX
OCR Text ...n Ts VP Ratings -40 to +125 +0000'>6 20000'>60 C for 10 sec. 2 mm from case 3.8 Class 1 Unit C dBm V Note: Conditions exceeding those listed...00-SG3-C0 part Number PL-SLR-00-SG3-C0 PL-SLR-00-SG3-C1 Description 850nm4.5GLCROSA,lowpower 850nm4...
Description 850 nm 4.25 G LC ROSA

File Size 255.71K  /  4 Page

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    PRECI-DIP SA
Part No. 150-V3-300000'>6-00-100000'>6191 150-V3-310-00-100000'>6191
OCR Text ...oles a b c d e see order codes 0000'>6 7.0000'>6 7.0000'>62 10.1 12.30 7.0000'>6 150-pp-300000'>6-00-100000'>610000'>61 8 10.1 7.0000'>62 10.1 12.30 10.1 150-pp-308-00-100000'>610000'>61 10 12.0000'>6 7.0000'>62 10.1 12.30 12.0000'>6 150-pp-310-00-100000'>610000'>61 14 17.8 7.0000'>62 10.1 12.30 5.3 150-pp-314-00-100000'>610000'>61 10000'>6 20.3 7...
Description DIP0000'>6, IC SOCKET
DIP10, IC SOCKET

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    Renesas Electronics, Corp.
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
Part No. RJK4013DPE-00-J3 RJK4013DPE
OCR Text ...Tstg Ratings 400 30 17 51 17 51 0000'>6 2 100 1.25 150 -55 to +150 Unit V V A A A A A mJ W C/W C C Rev.1.00 Feb 02, 2007 page 1 of 3 RJK4013DPE Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate volt...
Description Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开

File Size 69.66K  /  4 Page

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    Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Part No. RJK4014DPK-00-T0 RJK4014DPK
OCR Text ...5.0 0.3 Unit: mm 1.5 15.0000'>6 0.3 4.8 0.2 0.5 1.0 3.2 0.2 14.9 0.2 19.9 0.2 1.0000'>6 1.4 Max 2.0 2.8 2.0 1.0 ...00-T0 Quantity 30000'>60 pcs Box (Tube) Shipping Container REJ03G1570000'>6-0100 Rev.1.00 Aug 08, 2007 Page 3...
Description Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开

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    Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
Part No. RJK4512DPE-00-J3 RJK4512DPE
OCR Text ...44 0.2 10.2 0.3 (1.4) 8.0000'>6 0.3 + 0.3 - 0.5 10.0 (1.5) (1.5) 2.49 0.2 0.2 0.1 + 0.1 - 7.8 7.0 2.2 1.37 0.2 ...00-J3 Quantity 1000 pcs Taping Shipping Container REJ03G1540-0100 Rev.1.00 Apr 10, 2007 Page 3 of...
Description Silicon N Channel MOS FET High Speed Power Switc

File Size 69.58K  /  4 Page

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    RENESAS[Renesas Electronics Corporation]
Part No. RJK5012DPP-00-T2 RJK5012DPP
OCR Text ...Rev.1.00 May 10, 2007 Page 1 of 0000'>6 RJK5012DPP Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to sour...
Description 12 A, 500 V, 0.0000'>62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Silicon N Channel MOS FET High Speed Power Switching

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    RJK60S5DPE-00-J3

Renesas Electronics Corporation
Part No. RJK0000'>60S5DPE-00-J3
OCR Text 0000'>6 apr 23, 2012 preliminary datasheet rjk0000'>60s5dpe 0000'>600v - 20a - sj mos fet high speed power switching features ? superjunction mo...00 apr 23, 2012 rjk0000'>60s5dpe preliminary r07ds00000'>639ej0100 rev.1.00 page 2 of 0000'>6 apr 23, 2012 ...
Description 0000'>600V - 20A - SJ MOS FET High Speed Power Switching

File Size 78.35K  /  7 Page

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