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  6.40-7.20ghz Datasheet PDF File

For 6.40-7.20ghz Found Datasheets File :: 201    Search Time::2.75ms    
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    FMA30091

Filtronic Compound Semiconductors
Part No. FMA30091
OCR Text ...nt Noise Figure 8.0V 4 mA 6.5 dB 5 Note: TAMBIENT = +25C, Z0 = 50 Performances for on-wafer measurements All Bias resistors bond...40 -50 -60 -70 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 Output Return Loss 0 -5 -10 -15 -20 -25 ...
Description 2-20GHZ BROADBAND MMIC AMPLIFIER

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    NJG1130KA1

New Japan Radio
Part No. NJG1130KA1
OCR Text ... 4 AMP 3 1. 2. 3. 4. 5. 6. RF OUT GND VDD RF IN GND GND 5 2 6 AMP 1 Package Orientation Mark Note: Specifications...40~+85 -55~+150 UNITS V dBm mW C C ! ELECTRICAL CHARACTERISTICS GENERAL CONDITIONS: VDD=2.85V, fr...
Description GPS LOW NOISE AMPLIFIER GaAs MMIC

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    CHA2292-99F_00 CHA2292 CHA229207 CHA2292-99F/00

United Monolithic Semiconductors
Part No. CHA2292-99F_00 CHA2292 CHA229207 CHA2292-99F/00
OCR Text ...28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Typical on wafer measurements :Gain & NF Main Features Frequency range: 17-24GHz 2.8dB Noise ...40 to +85 -55 to +155 Unit V V mA V dBm C C (1) Operation of this device above anyone of th...
Description 16-24GHz Low Noise, Variable Gain Amplifier

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    CHT4690

United Monolithic Semiconductors
Part No. CHT4690
OCR Text ... Unit GHz dB dB dB dB -2.5 -6.5 -25 -34 -3 -7.5 2.3:1 2.5:1 25 40 dBm dB Input 1dB compression point (any attenuation) (5 to 20GHz) C/I3 @ Pin/tone=12dBm (any attenuation) (up to 26GHz) ESD Protection : Electrostatic dischar...
Description 5-30GHz ATTENUATOR

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    PS1608GT2-R50-T1 PS1608GT2-R50-T5 PS3216 PS3216G PS5025 PS5025G PS3216GT2-R50-T1 PS2012GT2-R50-T5

SUSUMU Co., Ltd.
ETC
List of Unclassifed Manufacturers
Part No. PS1608GT2-R50-T1 PS1608GT2-R50-T5 PS3216 PS3216G PS5025 PS5025G PS3216GT2-R50-T1 PS2012GT2-R50-T5
OCR Text ...5025(G) (1206) (2010) 3.2 0.2 1.6 0.2 0.3 0.1 0.35 0.1 0.4 0.1 5.0 0.2 2.5 0.2 0.35 0.1 0.65 0.1 0.8 0.15 (unit : mm) a Front side t...40 125 C 1,000*5,000pcs/reel 1.3(DC 10GHz) 1.5(10GHz 15GHz) 250mW 500mW 1.3(DC 7.5GHz) 1.5(7.5GHz 10...
Description POWER DIVIDER 6DB .125W 0805 SMD 0 MHz - 17500 MHz RF/MICROWAVE SPLITTER
0 MHz - 15000 MHz RF/MICROWAVE SPLITTER ROHS COMPLIANT PACKAGE-3
High Precision Power Splitter

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    NJG1131HA8

New Japan Radio
Part No. NJG1131HA8
OCR Text ...IGURATION (Top View) GND VG 6 RFOUT 1 Bias Circuit 1 Pin INDEX 5 Pin Connection 1. GND 2. RFIN 3. GND 4. GND 5. RFOUT 6. VG ...40~+85 -55~+150 UNITS V dBm mW C C ELECTRICAL CHARACTERISTICS 1 (DC) General conditions: VDD=2.7V...
Description UHF BAND LOW NOISE AMPLIFIER GaAs MMIC

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    VGA-P014458-QGG

United Monolithic Semiconductors
Part No. VGA-P014458-QGG
OCR Text ...19 22 22 24 4.5 250 300 -1.2 +0,6 Typ Max 27 Unit GHz dB dB dB dB dB dB dB dBm dBm dBm dB dB V mA mA V V Gc (*) Id not affected by GcX...40 to +85 175 -55 to +125 Unit V mA V V dBm C C C (*) Operation of this device above anyone...
Description 17-27GHz Variable Gain Amplifier

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    SBFP420B

Sanyo Semicon Device
Part No. SBFP420B
OCR Text ... 1 0.05 0.5 Top View 0.6 0.15 0.15 Side View 4 Marking 1 3 1.0 Specifications Absolute Maximum Ratings at Ta=25...40 Collector Current, IC -- mA IT05737 NF -- IC VCE=1V f=1.8GHz Output Level, Pout -- dBm ...
Description Ultrahigh-Frequency Transistors
UHF to C Band Low Noise Amplifier, Oscillation Applications
From old datasheet system

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    TGC4405

TriQuint Semiconductor
Part No. TGC4405
OCR Text ...erformance 20 18 16 14 12 10 8 6 4 2 0 Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -8dBm, +2dBm LO Primary Applications * * ...40 -45 -50 -55 8 Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -8dBm, +2dBm LO Output Po...
Description 17 - 27 GHz Upconverter

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    MASW-003100-1192 MASW-003100-11920G MASW-003100-11920W MASW-001100-1190 MASW-001100-11900G MASW-001100-11900W MASW-00210

M/A-COM Technology Solutions, Inc.
Part No. MASW-003100-1192 MASW-003100-11920G MASW-003100-11920W MASW-001100-1190 MASW-001100-11900G MASW-001100-11900W MASW-002100-1191 MASW-002100-11910G MASW-002100-11910W
OCR Text ...LOSS (dB 30 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 RETURN LOSS (dB) Output Return Loss -20 -25 -30 -35 0 5 10 15 20 25 Input Retu...40 Rev. V6 INPUT RETURN LOSS vs. BIAS CURRENT @ 10 GHz -22 INPUT RETURN LOSS (dB -24 -2...
Description HMIC Silicon PIN Diode Switches RoHs Compliant
HMIC垄芒 Silicon PIN Diode Switches RoHs Compliant

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