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Micron Technology, Inc.
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Part No. |
MT2LDT432HG-6X MT2LDT432HG-5X MT4LDT832HG-5XS MT2LDT432HG-5XS MT2LDT432HG-6XS
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OCR Text |
...IMM (gold) * Timing 50ns access 60ns access * Access Cycles FAST PAGE MODE EDO PAGE MODE * Refresh Rates Standard Refresh Self Refresh (128ms period)
MARKING
G -5 -6 None X None S
PIN FRONT PIN 1 VSS 2 3 DQ1 4 5 DQ3 6 7 DQ5 8 9 DQ7 1... |
Description |
SMALL-OUTLINE DRAM MODULE 小外形DRAM模块 Silver Mica Capacitor; Capacitance:1200pF; Capacitance Tolerance: 5%; Series:CDV30; Voltage Rating:1500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:11.1mm; Leaded Process Compatible:No RoHS Compliant: No 小外形DRAM模块
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File Size |
394.22K /
25 Page |
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Hynix Semiconductor
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Part No. |
HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 HY51VS65163HGJ-6 HY51VS65163HGLJ-45 HY51VS65163HGLJ-6 HY51VS65163HGLJ-5 HY51VS65163HGLT-45 HY51VS65163HGLT-5 HY51VS65163HGT-45 HY51VS65163HGLT-6 HY51VS65163HGT-5 HY51VS65163HGT-6
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OCR Text |
...84ns 20ns hy51v(s)65163hg/hgl-6 60ns 30ns 15ns 104ns 25ns 45ns 50ns 60ns active 468mw 432mw 396mw standby 1.8mw(cmos level max) 0.72mw (l-version : max) part number access time package hy51v(s)65163hg/hg(l)j-45 hy51v(s)... |
Description |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
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File Size |
97.47K /
11 Page |
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Download Datasheet |
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Part No. |
PROMOSTECHNOLOGIESINC-V827464N24SCJX-D3
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OCR Text |
...ive/auto-refresh time (=t rc ) 60ns 60ns 60ns 3ch 3ch 3ch 42 sdram device minimum active to autorefresh to active/ auto-refresh time (=t rfc ) 70ns 70ns 72ns 46h 46h 48h 43 sdram device maximum device cycle time (=t ck max ) 12ns 12ns 12ns... |
Description |
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File Size |
325.06K /
17 Page |
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it Online |
Download Datasheet |
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Price and Availability
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