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  configuration devices for sram Datasheet PDF File

For configuration devices for sram Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

    RKEF090 RKEF300 RKEF250 BBRF550 BBRF5501 RKEF500 RKEF160 RGEF1000 RGEF1000-2 RGEF1000-AP RGEF1100 RGEF1100-2 RGEF1100-AP

Tyco Electronics
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Part No. RKEF090 RKEF300 RKEF250 BBRF550 BBRF5501 RKEF500 RKEF160 RGEF1000 RGEF1000-2 RGEF1000-AP RGEF1100 RGEF1100-2 RGEF1100-AP RGEF1200 RGEF1200-2 RGEF1200-AP RGEF1400 RGEF1400-2 RGEF1400-AP RUEF900 RGEF900 RHEF900 RUEF900-2 RGEF900-2 RHEF900-2 RUEF900-AP RGEF900-AP RHEF900-AP RHEF400 RHEF400-2 RHEF400-AP RHEF450 RHEF450-2 RHEF450-AP RUSBF250 RUSBF250-2 RUSBF250-AP RUSBF160 RUSBF160-2 RUSBF160-AP RTEF120 RTEF120-2 RTEF120-AP RTEF135 RTEF135-2 RTEF135-AP RTEF190 RTEF190-2 RTEF190-AP RHEF300 RHEF300-2 RHEF300-AP RHEF1400 RHEF1400-2 RHEF1400-AP RXEF090 RUEF090 RUSBF090 RUEF700 RGEF700 RHEF700 RUEF700-2 RGEF700-2 RHEF700-2 RUEF700-AP RGEF700-AP RHEF700-AP RHEF1300-2 RHEF1300-AP RXEF185-2 RUEF185-2 RUSBF185-2 RXEF185-AP RUEF185-AP RUSBF185-AP RXEF300-2 RUEF300-2 RGEF300-2 RXEF300-AP RUEF300-AP RGEF300-AP RXEF250 RUEF250 RGEF250 RXEF250-2 RUEF250-2 RGEF250-2 RXEF250-AP RUEF250-AP RGEF250-AP RHEF100 RHEF100-2 RHEF1000-2 RHEF1000-AP RHEF550 RHEF550-2 RHEF050 RHEF050-2 RHEF070 RHEF070-2 RHEF200 RHEF200-2 RHEF200-AP BBRF550-2 RHEF750 RHEF750-2 RHEF750-AP RHEF550-AP RXEF075-2 RUSBF075-2 RXEF075-AP RUSBF075-AP RXEF065-2 RXEF065-AP RXEF065 RUSBF110 RUSBF110-2 RUSBF110-AP RUSBF090-2 RUSBF090-AP RUSBF1
Description PolySwitch Resettable devices Radial-leaded devices
Overcurrent Protection Device

File Size 349.57K  /  28 Page

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Part No. ATT17128-P8 ATT1736-P8
Description 128K X 1 configuration MEMORY, PDIP8
36288 X 1 configuration MEMORY, PDIP8

File Size 218.48K  /  8 Page

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    XILINX INC
Part No. XC18V04VQ44C0799 XC18V02VQ44C0799
Description 512K X 8 configuration MEMORY, 20 ns, PQFP44
256K X 8 configuration MEMORY, 20 ns, PQFP44

File Size 408.50K  /  26 Page

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    VJ15PA0340 VJ32PA0340 VJ15MA0160 VJ15MA0340 VJ13MA0160 VJ14MA0160 VJ20MA0160 VJ20PA0160 VC20MA0160KBA

AVX Corporation
Part No. VJ15PA0340 VJ32PA0340 VJ15MA0160 VJ15MA0340 VJ13MA0160 VJ14MA0160 VJ20MA0160 VJ20PA0160 VC20MA0160KBA
Description Transient Voltage Suppression, ESD Protection devices & EMI devices

File Size 1,779.94K  /  10 Page

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    MICROSMD050F MICROSMD050F-2

Tyco Electronics
Part No. MICROSMD050F MICROSMD050F-2
Description Specification Status: Released
PolySwitch?PTC devices
PolySwitch垄莽PTC devices

File Size 24.03K  /  1 Page

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    PROMAX-JOHNTON
Part No. PJ3100
Description 7V; 300mA CMOS LDO with enable. for battery-powered devices, personal communication devices

File Size 467.58K  /  9 Page

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    LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005N LVR005NK LVR005NK-2 LVR005NS LVR005NS-2 LVR008N LVR008NK LVR008NK-2

Tyco Electronics
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Part No. LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005N LVR005NK LVR005NK-2 LVR005NS LVR005NS-2 LVR008N LVR008NK LVR008NK-2 LVR008NS LVR008NS-2 LVR012 LVR012K LVR033K-2 LVR055 LVR055K LVR055S LVR055S-2 LVRL200 LVR033S-2 LVR040 LVRL075 LVRL075S LVRL125 LVRL125S LVRL135 LVRL135S LVR040K LVR200S LVR012S-2 LVR016S-2 LVR012K-2 LVR075S
Description PolySwitch Resettable devices Line-Voltage-Rated devices

File Size 207.50K  /  10 Page

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    Xilinx, Inc.
Part No. XC18V512 XC18V01
Description In-System Programmable configuration PROMs(在系统可编程配置PROM)
In-System Programmable configuration PROMs(?ㄧ郴缁??缂????疆PROM)

File Size 169.09K  /  19 Page

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    CREE POWER
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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    意法半导
STMicroelectronics N.V.
Part No. M28W320EBB85ZB1T M28W320EBT85N1T M28W320EBB85N1T M28W320EBT85ZB1T M28W320EBB85ZB6T M28W320EBB85N6T M28W320EBB90N6T M28W320EBB90N1 M28W320EBB90N1T M28W320EB-ZBT M28W320EBB10ZB1 M28W320EBB10ZB6T M28W320EBT10N1 M28W320EBB10N6T -M28W320EBB85N1T
Description Voltage regulator double diodes - configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 12.7 V; VZ min.: 11.4 V; VZ nom: 12 V
surface mount silicon Zener diodes
Voltage regulator double diodes - configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 15.6 V; VZ min.: 13.8 V; VZ nom: 15 V
Voltage regulator double diodes - configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 11.6 V; VZ min.: 10.4 V; VZ nom: 11 V
Voltage regulator double diodes - configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 10.6 V; VZ min.: 9.4 V; VZ nom: 10 V
Voltage regulator double diodes - configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.5 V; VZ min.: 3.1 V; VZ nom: 3.3 V
Voltage regulator double diodes - configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 14.1 V; VZ min.: 12.4 V; VZ nom: 13 V
Voltage regulator double diodes - configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.6 V; VZ min.: 2.2 V; VZ nom: 2.4 V
Voltage regulator double diodes - configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.9 V; VZ min.: 2.5 V; VZ nom: 2.7 V
Voltage regulator double diodes - configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.2 V; VZ min.: 2.8 V; VZ nom: 3 V
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位(处理器x16插槽,引导块V电源快闪记忆

File Size 305.77K  /  45 Page

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For configuration devices for sram Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

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