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  diode-5.0v Datasheet PDF File

For diode-5.0v Found Datasheets File :: 73752    Search Time::2.922ms    
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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ... oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SY...5-3 IRF234, IRF235, IRF236, IRF237 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text ...gle Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) 2 20V (VGS = 0 , ...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ... oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SY...5-3 IRF244, IRF245, IRF246, IRF247 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250SMD
OCR Text ...gle Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) 2 20V (VGS = 0 , ...
Description N.CHANNEL POWER MOSFET

File Size 23.37K  /  2 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ...Hz VGS = 0V, VDS = 0V to 32V Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Cu...5.5V 5.0V 4.5V 10000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Curren...
Description AUTOMOTIVE MOSFET

File Size 260.32K  /  10 Page

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804S
OCR Text ...Hz VGS = 0V, VDS = 0V to 32V Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Sourc...5.5V 5.0V BOTTOM 4.5V TOP 10000 TOP TOP 1000 15V 15V 10V 10V 8.0V 8.0V 7.0V 7.0V 6.0V 6.0V...
Description 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 273.77K  /  12 Page

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    IRF2805L IRF2805S

IRF[International Rectifier]
Part No. IRF2805L IRF2805S
OCR Text ...petitive Avalanche EnergyW Peak Diode Recovery dv/dt S Operating Junction and Storage Temperature Range Soldering Temperature, for 10 second...5 7.5 5110 1190 210 6470 860 1600 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference ...
Description 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 221.43K  /  11 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 82 58 280 230 1.5 20 43 23 5.9 -55 to + 175 300 (1.6mm f...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 82 58 280 230 1.5 20 43 23 5.9 -55 to + 175 300 (1.6mm f...
Description Power MOSFET(Vdss=75V, Id=82A?)
Power MOSFET(Vdss=75V, Id=82A)

File Size 149.88K  /  8 Page

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    IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS
OCR Text ... (0.25in.) from package G Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward ...
Description AUTOMOTIVE MOSFET 汽车MOSFET
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 359.66K  /  12 Page

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For diode-5.0v Found Datasheets File :: 73752    Search Time::2.922ms    
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