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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
MG250V2YMS3
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| Description |
N-ch SiC MOSFET Module, 1700 V, 250 A, 2-153A1A
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| Tech specs |
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Official Product Page
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Mini-Circuits
Yageo, Corp.
ITT, Corp.
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| Part No. |
PP78AUL0.75UF/-1400V PP78AUL4.32UF/-10160V PP78AUL3.01UF/-10160V PP78AUL2.55UF/-10250V PP78AUL3.01UF/-20160V PP78AUL0.2UF/-5630V PP78AUL0.2UF/-1630V PP78AUL2.55UF/-20250V
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| Description |
CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 400 V, 0.75 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 160 V, 4.32 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 160 V, 3.01 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 250 V, 2.55 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 630 V, 0.2 uF, THROUGH HOLE MOUNT AXIAL LEADED
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| File Size |
138.88K /
1 Page |
 View
it Online |
Download Datasheet
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GSI Technology, Inc.
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| Part No. |
GS8161E36BD-150 GS8161E36BT-150 GS8161E36BGT-200I GS8161E36BGD-200 GS8161E18BT GS8161E18BGD-150 GS8161E36BT-250I GSITECHNOLOGY-GS8161E18BGD-150I
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| Description |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PQFP100
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 100万18，为512k × 36，为512k × 36 35.7同步突发静态存储器
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100
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| File Size |
761.32K /
35 Page |
View
it Online |
Download Datasheet |
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