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high power limiters 0 5 ghz to Datasheet PDF File

For high power limiters 0 5 ghz to Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |

				Vicor, Corp. VICOR[Vicor Corporation]
Part No.	08-130097-B 08-130097
Description	Compant 0000'>high-Insulation 0000'>power Relay, Polarized, 10A 外形图式PFC MEGAPAC大功率（2.4KW OUTLINE DRAWING PFC MEGAPAC 0000'>high 0000'>power (2.4KW)
File Size	122.13K / 2 Page	View it Online	Download Datasheet

				CREE 0000'>power
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

				ADPOW[Advanced 0000'>power Technology] Advanced 0000'>power Technology Ltd.
Part No.	APT1001RBLC APT1001RSLC APT1001
Description	0000'>power MOS VI 1000V 11A 1.000 Ohm 0000'>power MOS VI is a new generation of low gate charge, 0000'>high voltage N-Channel enhancement mode 0000'>power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No 0000'>power MOS VI is a new generation of low gate charge/ 0000'>high voltage N-Channel enhancement mode 0000'>power MOSFETs N-CHANNEL ENHANCEMENT MODE 0000'>high VOLTAGE 0000'>power MOSFETS
File Size	34.77K / 2 Page	View it Online	Download Datasheet

				UTC ROHM[Rohm]
Part No.	2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD2114K1 2SD26721 2SK20941 2SK25031 2SK25041 2SK27151 2SK30181 2SK30191 2SK30501 2SK35411 4N60-TA3-T 4N60-TF3-T 4N60L-TA3-T
Description	-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor 0000'>high-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) 0000'>high-voltage Amplifier Transistor (120V, 50mA) 0000'>high-Frequency Amplifier Transistor (11V, 50mA, 3.2ghz) 0000'>power transistor (60V, 3A) Medium 0000'>power transistor (60V, 2A) Medium 0000'>power transistor (60V, 0.5A) 0000'>high-gain Amplifier Transistor (32V , 0.3A) Medium 0000'>power Transistor (32V, 1A) 0000'>power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) 0000'>high-current Gain Medium 0000'>power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL 0000'>power MOSFET
File Size	93.04K / 3 Page	View it Online	Download Datasheet

				Fujitsu Component Limited. Fujitsu Microelectronics Fujitsu Media Devices Limited toshiba Semiconductor Fujitsu Limited Fujitsu, Ltd.
Part No.	2SC2429
Description	SILICON 0000'>high SPEED TRIPLE DIFFUSED NPN 0000'>power TRANSIStoR 10 AMP,400 VOLT From old datasheet system SILICON 0000'>high SPPED 0000'>power TRANSIStoRS 高硅SPPED功率晶体
File Size	138.86K / 3 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MJB18004D2T4-D
Description	0000'>high Speed, 0000'>high Gain Bipolar NPN 0000'>power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount 0000'>power TRANSIStoRS 5 AMPERES 1000 VOLTS 75 WATTS
File Size	224.23K / 16 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BTS716G BTS716 Q67060-S7025
Description	0000'>high Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-SO -55 to 125 Smart 0000'>high Side Switches - 3,0-40V, 4x140mΩ Limit(scr) 6,5A DSO-20-9 Smart 0000'>high-Side 0000'>power Switch Four Channels: 4 x 140m Status Feedback Smart 0000'>high-Side 0000'>power Switch Four Channels: 4 x 140mз Status Feedback
File Size	399.43K / 14 Page	View it Online	Download Datasheet

				TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
Part No.	BUX39
Description	0000'>high CURRENT 0000'>high SPEED 0000'>high 0000'>power SILICON NPN PLANAR TRANSIStoR 30 A, 90 V, NPN, Si, 0000'>power TRANSIStoR, to-3
File Size	20.34K / 2 Page	View it Online	Download Datasheet

				toshiba Corporation toSHIBA[toshiba Semiconductor]
Part No.	SH400R28B
Description	0000'>high 0000'>power Control Applications Alloy-Free 0000'>hight Speed Thyristor(0000'>high 0000'>power Control Application)
File Size	195.04K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MJW16206-D
Description	SCANSWITCH NPN Bipolar 0000'>power Deflection Transistors For 0000'>high and Very 0000'>high Resolution CRT Monitors 0000'>power TRANSIStoRS
File Size	156.00K / 12 Page	View it Online	Download Datasheet

For high power limiters 0 5 ghz to Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |

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