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CREE t color='#FF0000'>powert>
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For t color='#FF0000'>hight> frequency t color='#FF0000'>powert> devices, t color='#FF0000'>hight> t color='#FF0000'>powert> devices, t color='#FF0000'>hight> temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For t color='#FF0000'>hight> frequency t color='#FF0000'>powert> devices, t color='#FF0000'>hight> t color='#FF0000'>powert> devices, t color='#FF0000'>hight> temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For t color='#FF0000'>hight> frequency t color='#FF0000'>powert> devices, t color='#FF0000'>hight> t color='#FF0000'>powert> devices, t color='#FF0000'>hight> temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For t color='#FF0000'>hight> frequency t color='#FF0000'>powert> devices, t color='#FF0000'>hight> t color='#FF0000'>powert> devices, t color='#FF0000'>hight> temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For t color='#FF0000'>hight> frequency t color='#FF0000'>powert> devices, t color='#FF0000'>hight> t color='#FF0000'>powert> devices, t color='#FF0000'>hight> temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For t color='#FF0000'>hight> frequency t color='#FF0000'>powert> devices, t color='#FF0000'>hight> t color='#FF0000'>powert> devices, t color='#FF0000'>hight> temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For t color='#FF0000'>hight> frequency t color='#FF0000'>powert> devices, t color='#FF0000'>hight> t color='#FF0000'>powert> devices, t color='#FF0000'>hight> temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For t color='#FF0000'>hight> frequency t color='#FF0000'>powert> devices, t color='#FF0000'>hight> t color='#FF0000'>powert> devices, t color='#FF0000'>hight> temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
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it Online |
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UtC ROHM[Rohm]
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| Part No. |
2SBt color='#FF0000'>1t>7t color='#FF0000'>1t>3 2SBt color='#FF0000'>1t>7t color='#FF0000'>1t>4 2SB852Kt color='#FF0000'>1t> 2SC24t color='#FF0000'>1t>2Kt color='#FF0000'>1t> 2SC4t color='#FF0000'>1t>02t color='#FF0000'>1t> 2SC4726t color='#FF0000'>1t> 2SC5824t color='#FF0000'>1t> 2SC5866t color='#FF0000'>1t> 2SC5876t color='#FF0000'>1t> 2SDt color='#FF0000'>1t>383Kt color='#FF0000'>1t> 2SDt color='#FF0000'>1t>664t color='#FF0000'>1t> 2SDt color='#FF0000'>1t>898t color='#FF0000'>1t> 2SD2098t color='#FF0000'>1t> 2SD2t color='#FF0000'>1t>t color='#FF0000'>1t>4Kt color='#FF0000'>1t> 2SD2672t color='#FF0000'>1t> 2SK2094t color='#FF0000'>1t> 2SKt color='#FF0000'>25t>03t color='#FF0000'>1t> 2SKt color='#FF0000'>25t>04t color='#FF0000'>1t> 2SK27t color='#FF0000'>1t>5t color='#FF0000'>1t> 2SK30t color='#FF0000'>1t>8t color='#FF0000'>1t> 2SK30t color='#FF0000'>1t>9t color='#FF0000'>1t> 2SK3050t color='#FF0000'>1t> 2SK354t color='#FF0000'>1t>t color='#FF0000'>1t> 4N60-tA3-t 4N60-tF3-t 4N60L-tA3-t
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| Description |
-3A / -t color='#FF0000'>1t>2V Bipolar transistor -2A / -30V Bipolar transistor t color='#FF0000'>hight>-gain Amplifier transistor (?32V, ?0.3A) General purpose transistor (50V, 0.t color='#FF0000'>1t>5A) t color='#FF0000'>hight>-voltage Amplifier transistor (t color='#FF0000'>1t>20V, 50mA) t color='#FF0000'>hight>-Frequency Amplifier transistor (t color='#FF0000'>1t>t color='#FF0000'>1t>V, 50mA, 3.2t color='#FF0000'>ghzt>) t color='#FF0000'>powert> transistor (60V, 3A) Medium t color='#FF0000'>powert> transistor (60V, 2A) Medium t color='#FF0000'>powert> transistor (60V, 0.5A) t color='#FF0000'>hight>-gain Amplifier transistor (32V , 0.3A) Medium t color='#FF0000'>powert> transistor (32V, t color='#FF0000'>1t>A) t color='#FF0000'>powert> transistor (80V, t color='#FF0000'>1t>A) Low VCE(sat) transistor (strobe flash) t color='#FF0000'>hight>-current Gain Medium t color='#FF0000'>powert> transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FEt t color='#FF0000'>1t>0V Drive Nch MOS FEt 2.5V Drive Nch MOS FEt 4 Amps, 600 Volts N-CHANNEL t color='#FF0000'>powert> MOSFEt
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| File Size |
93.04K /
3 Page |
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it Online |
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toshiba Corporation tOSHIBA[toshiba Semiconductor]
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| Part No. |
SH400R28B
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| Description |
t color='#FF0000'>hight> t color='#FF0000'>powert> Control Applications Alloy-Free t color='#FF0000'>hight>t Speed thyristor(t color='#FF0000'>hight> t color='#FF0000'>powert> Control Application)
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| File Size |
195.04K /
4 Page |
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it Online |
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Price and Availability
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