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  high-repetition Datasheet PDF File

For high-repetition Found Datasheets File :: 2911    Search Time::0.921ms    
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    HSDL-1001 HSDL1001

Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
Part No. HSDL-1001 HSDL1001
OCR Text ... Kb/s. The HSDL-1001 contains a high speed, high efficiency TS AlGaAs 875 nm LED, a silicon PIN photodiode and a bipolar, silicon integra...repetition rate, PRR, is defined as 2.4 Kp/s PRR 115.2 Kp/s and the pulse width, PW, is defined as...
Description Infrared Compliant Transceiver(红外顺应收发
Infrared IrDA Compliant Transceiver

File Size 150.09K  /  8 Page

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    K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-D K9F2808U0B-DCB0 K9F2808U0B-DIB0 K9F2808U0B-V K9F280

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-D K9F2808U0B-DCB0 K9F2808U0B-DIB0 K9F2808U0B-V K9F2808U0B-VCB0 K9F2808U0B-VIB0 K9F2808U0B-Y K9F2808U0B-YCB0 K9F2808U0B-YIB0 K9F2808Q0C K9F2808Q0C-DCB0
OCR Text ... from 35ns to 40ns - Changed RE High Hold time(tREH) from 15ns to 20ns - Changed WE High Hold time(tWH) from 15ns to 20ns 1. Device Code is ...repetition, where required, and internal verification and margining of data. Even write-intensive sy...
Description 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit NAND Flash Memory

File Size 302.44K  /  29 Page

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    K9F2808Q0C K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9F2808U0C-DIB0 K9F2808U0C-VCB0 K9F2808U0C-VIB0 K9F2816Q0C-DCB0 K9F2816Q0C-DI

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2808Q0C K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9F2808U0C-DIB0 K9F2808U0C-VCB0 K9F2808U0C-VIB0 K9F2816Q0C-DCB0 K9F2816Q0C-DIB0 K9F2816U0C-DCB0 K9F2816U0C-DIB0 K9F2816U0C-YCB0 K9F2816U0C-YIB0 K9F2G08Q0M K9F2808U0C-YCB0 K9F2808U0C-YIB0
OCR Text ...erations. The I/O pins float to high-z when the chip is deselected or when the outputs are disabled. I/O8 ~ I/O15 are used only in X16 organization device. Since command input and address input are x8 operation, I/O8 ~ I/O15 are not used to...
Description 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
16M x 8 bit NAND flash memory, 2.7 - 3.6V

File Size 579.95K  /  33 Page

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    K9F2808U0M- K9F2808U0M-YCB0 K9F2808U0M-YIB0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2808U0M- K9F2808U0M-YCB0 K9F2808U0M-YIB0
OCR Text ... CE RE WE Control Logic & High Voltage Generator Global Buffers Output Driver CLE ALE WP Figure 2. ARRAY ORGANIZATION 1 B...repetition where required. When the erase operation is completed, the Write Status Bit(I/O 0) may be...
Description 16M x 8 Bit NAND Flash Memory

File Size 344.24K  /  26 Page

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    K9F2808U0 K9F2808U0A K9F2808U0A- K9F2808U0A-YCB0 K9F2808U0A-YIB0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2808U0 K9F2808U0A K9F2808U0A- K9F2808U0A-YCB0 K9F2808U0A-YIB0
OCR Text ...s t Nov. 20th 2000 - *X can be "High" or "Low" => *L must be set to "Low" 2. Explain how pointer operation works in detail. 3. Renamed GND i...repetition, where required, and internal verify and margining of data. Even the write-intensive syst...
Description 16M x 8 Bit NAND Flash Memory

File Size 351.20K  /  26 Page

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    K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A-TIB0 K9F4G08U0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A-TIB0 K9F4G08U0M
OCR Text ... 23th 2001 ~ 2.5V VCC High WP WE 2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added. 3. AC parameter tAR is devided...repetition where required, and performs internal verification of cell data. The K9F4008W0A is an opt...
Description 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
512K x 8 bit NAND Flash Memory

File Size 316.09K  /  24 Page

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    PBYL1025B PBYL1020B

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. PBYL1025B PBYL1020B
OCR Text ...ng * Reverse surge capability * High thermal cycling performance * Low thermal resistance PBYL1025B series SYMBOL QUICK REFERENCE D...repetition rate limited by Tj max - 65 MIN. 20B 20 20 20 10 20 130 150 1 150 175 MAX. 25B 25 25 25 U...
Description Rectifier diodes Schottky barrier(肖特基势垒整流二极管)

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    PCD3360 PCD3360P PCD3360T

PHILIPS[Philips Semiconductors]
Part No. PCD3360 PCD3360P PCD3360T
OCR Text ...requency detection. When FDE is HIGH, the circuit is disabled and FDI becomes the enable/disable input for tone sequence generation. When th...repetition rates (RR1 and RR2) 7.8 Drive mode selection (DM) PCD3360 The duration of a time in...
Description Programmable multi-tone telephone ringer

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    SAA7500

Philips Semiconductors
Part No. SAA7500
OCR Text ...on loss in the case of relative high, but for reception acceptable, bit error rates. This will not affect the rapid detection of a very high...repetition time of 2 ms. The programme type evaluation with its superior synchronization has to be p...
Description Digital satellite radio broadcasting tuner decoder SAT-2

File Size 146.92K  /  20 Page

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    SMCJ6036 SMCJ6036A SMCJ6037 SMCJ6037A SMCJ6038 SMCJ6038A SMCJ6039 SMCJ6039A SMCJ6040 SMCJ6040A SMCJ6041 SMCJ6041A SMCJ60

MICROSEMI CORP-SCOTTSDALE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. SMCJ6036 SMCJ6036A SMCJ6037 SMCJ6037A SMCJ6038 SMCJ6038A SMCJ6039 SMCJ6039A SMCJ6040 SMCJ6040A SMCJ6041 SMCJ6041A SMCJ6042 SMCJ6042A SMCJ6043 SMCJ6043A SMCJ6044 SMCJ6044A SMCJ6045 SMCJ6045A SMCJ6046 SMCJ6046A SMCJ6047 SMCJ6047A SMCJ6048 SMCJ6048A SMCJ6049 SMCJ6049A SMCJ6050 SMCJ6050A SMCJ6051 SMCJ6051A SMCJ6052 SMCJ6052A SMCJ6053 SMCJ6053A SMCJ6054 SMCJ6054A SMCJ6055 SMCJ6055A SMCJ6056 SMCJ6056A SMCJ6057 SMCJ6057A SMCJ6058 SMCJ6058A SMCJ6059 SMCJ6059A SMCJ6060 SMCJ6060A SMCJ6061 SMCJ6061A SMCJ6062 SMCJ6062A SMCJ6063 SMCJ6063A SMCJ6064 SMCJ6064A SMCJ6065 SMCJ6065A SMCJ6066 SMCJ6066A SMCJ6067 SMCJ6067A SMCJ6068 SMCJ6068A SMCJ6069 SMCJ6069A SMCJ6070 SMCJ6070A SMCJ6071 SMCJ6071A SMCJ6072 SMCJ6072A SMCG_J6072A SMCG6059 SMCG6059A SMCG6060 SMCG6060A SMCG6056 SMCG6056A SMCGJ6036 SMCG6050A SMCG6051A SMCG6053A SMCG6054 SMCG6055A SMCG6057A SMCG6048A MSC1364 SMCG6036 SMCG6036A SMCG6037 SMCG6037A SMCG6038 SMCG6038A SMCG6039 SMCG6039A SMCG6040 SMCG6040A SMCG6041 SMCG6041A SMCG6042 SMCG6042A SMCG6043A SMCG6044 SMCG6044A SMCG6045 SMCG6045A SMCG6046 SMCG6046A SMCG6047 SMCG6047A SMCG6048 SMCG6049 SMCG6049A SMCG6050 SMCG6051 SMCG6052 SMCG6052A SMCG6053 SMCG6054A SMCG6055 SMCG6057 SMCG6058 SMCG6058A S
OCR Text ...They are characterized by their high surge capability, fast response time, and low impedance, (Ron) for clamping surge. The SMC series, rate...Repetition rate (duty cycle): .01% 100 (Wave Form - See Figure 2) Non- Repetitive Mechanical Ch...
Description CMOS Triple 3-Input NAND Gate 14-PDIP -55 to 125 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
CMOS Dual 4-Input OR Gate 14-TSSOP -55 to 125 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
CMOS Triple 3-Input NAND Gate 14-CDIP -55 to 125 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
From old datasheet system

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For high-repetition Found Datasheets File :: 2911    Search Time::0.921ms    
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