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  hn.d.15 Datasheet PDF File

For hn.d.15 Found Datasheets File :: 501    Search Time::1.641ms    
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    HIP5060 HIP5060DW HIP5060DY

Intersil Corporation
Part No. HIP5060 HIP5060DW HIP5060DY
OCR Text hn Rec Tec or ww No t our IL S tac ER con 8-INT 8 Features 1-8 File Number 3207.2 Power Control IC Single Chip PowerSupply The H...D (25) D (22) D (21) D (18) D (17) FLTH (37) VREG (36) VCMP (35) PSOK (34) SHRT (33) PSEN (32) TM...
Description Power Control IC Single Chip PowerSupply

File Size 542.88K  /  6 Page

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    MM1130

Mitsumi Electronics, Corp.
MITSUMI[MITSUMI ELECTRIC]
Part No. MM1130
OCR Text ...rence t 8 2 PAL conversion mode Hn (SW2 : a, SW9 : a, VIN1=SG1, VIN3=SG2) 3 Burst gain G1bt 8 1 1 Red gain G1r 8 1 Green gain G1g 8 Blue gain G1b 8 1 Burst phase 1bt 8 Red phase 1r 8 Green phase 1g 8 Blue phase 1b 8 PAL conversion mode Hn+1...
Description NTSC PAL Converter Monolithic IC MM1130

File Size 207.61K  /  8 Page

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    APT1001RBLC APT1001RSLC APT1001

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT1001RBLC APT1001RSLC APT1001
OCR Text ...Pulse Avalanche Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 1000 11 44 30 40 280 2.24 300 26 30 -55 to 150 (Repetitive and Non-Rep...D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...
Description POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 34.77K  /  2 Page

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    APT10025JLC

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT10025JLC
OCR Text ...Pulse Avalanche Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 1000 34 136 30 40 700 5.6 -55 to 150 300 34 50 (Repetitive and Non-Rep...D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...
Description Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
POWER MOS VI 1000V 34A 0.250 Ohm

File Size 34.89K  /  2 Page

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    APT10030L2VFR

ADPOW[Advanced Power Technology]
Part No. APT10030L2VFR
OCR Text ...Pulse Avalanche Energy AL IC HN EC ION TT CE MA AN OR DV NF A I 1000 33 132 30 40 830 6.67 300 33 50 -55 to 150 (Repetitive and Non-Rep...D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.71K  /  2 Page

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    APT10030L2VR

ADPOW[Advanced Power Technology]
Part No. APT10030L2VR
OCR Text ...Pulse Avalanche Energy AL IC HN EC ION TT CE MA AN OR DV NF A I 1000 33 132 30 40 830 6.64 300 33 50 -55 to 150 (Repetitive and Non-Rep...D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.91K  /  2 Page

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    APT10035B2FLL APT10035LFLL

ADPOW[Advanced Power Technology]
Part No. APT10035B2FLL APT10035LFLL
OCR Text ...Pulse Avalanche Energy AL IC HN EC ION TT CE MA AN OR DV NF A I 28 112 30 40 690 5.5 300 28 50 (Repetitive and Non-Repetitive) 1 4 ...d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitanc...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 54.08K  /  2 Page

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    74HC1G126 74HC1G126GV 74HC1G126GW 74HCT1G126GW 74HCT1G126 74HCT1G126GV

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. 74HC1G126 74HC1G126GV 74HC1G126GW 74HCT1G126GW 74HCT1G126 74HCT1G126GV
OCR Text ...53 SOT353 SOT753 SOT753 MARKING HN TN H26 T26 handbook, halfpage OE 1 A2 GND 3 MNA124 5 VCC handbook, halfpage 2 1 A OE ...D.U.T. RT CL MNA232 VO RL = 1000 VCC open GND TEST tPLH/tPHL tPLZ/tPZL tPHZ/tPZH VCC ...
Description Bus buffer/line driver; 3-state
Bus buffer/line driver 3-state

File Size 72.59K  /  16 Page

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    SIM2-0515D-SIL7 SIM2-0512S-SIL7

Electronic Theatre Controls, Inc.
ETC
Part No. SIM2-0515D-SIL7 SIM2-0512S-SIL7
OCR Text HN-MODUL Besondere Merkmale Ultraminiatur-SIL7-Gehause Isolationsspannung max. 1000 VDC kurzzeitig Kurzschlufestigkeit Features Ultr...D B HN Electronic Components GmbH * Birkenweiherstr. 2 * D-63505 Langenselbold Tel. (06184) 92780...
Description 2 Watt Ultra-Miniatur SIL-Modul-Series

File Size 42.96K  /  2 Page

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    ADPOW[Advanced Power Technology]
Part No. APT1201R2B APT1201R2S APT1201R2SLL APT1201R2BLL
OCR Text ...Pulse Avalanche Energy AL IC HN EC ION TT CE MA AN OR DV NF A I 1200 12 48 30 40 400 3.20 300 12 30 (Repetitive and Non-Repetitive) 1 ...D = 250A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1200 12 1.20 100 500 ...
Description Power MOS 7TM is a new generation of low loss high voltage N-Channel enhancement mode power MOSFETS.

File Size 56.67K  /  2 Page

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