Description |
C BAND, 3.9 pF, SILICON, ABRUPT vaRIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, hyperabrupt vaRIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, ABRUPT vaRIABLE CAPACITANCE DIODE ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒hyperabrupt varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?hyperabrupt varactor Diodes TM C BAND, 16.5 pF, SILICON, hyperabrupt vaRIABLE CAPACITANCE DIODE C BAND, 1.5 pF, SILICON, hyperabrupt vaRIABLE CAPACITANCE DIODE
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