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ic-hbt Datasheet PDF File

For ic-hbt Found Datasheets File :: 736 Search Time::4.531ms
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				SEMTECH[Semtech Corporation]
Part No.	ACS104A ACS104A-PL ACS104A-TQ
OCR Text	...controller, driver and receiver IC, supporting fullduplex asynchronous transmission from DC to 162kbps over a serial link. Improved sensitiv...HBT Status pin ('Heartbeat' Indicator LED) The ACS104A HBT pin affords a method of driving a display...
Description	ACS104A Fiber Modem
File Size	144.83K / 12 Page	View it Online	Download Datasheet

				RF Micro Devices, Inc. RFMD[RF Micro Devices] http://
Part No.	RF2172 RF2172PCBA-H RF2172PCBA-L
OCR Text	...power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45G...
Description	ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL ISM频段3.6V的，25万千瓦，与模拟增益控制放大器
File Size	290.91K / 12 Page	View it Online	Download Datasheet

				RF MICRO DEVICES INC http:// RFMD[RF Micro Devices] RF Micro Devices, Inc.
Part No.	RF2377 RF2377-410PCBA RF2377-411PCBA
OCR Text	...h gain, and high linearity. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard miniature 6-lead plastic SOT package. 1.80 1.40 .50 .35 3.10 2....
Description	PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER DIODE SCHOTTKY DUAL-DUAL COMMON-CATHODE 30V 200mW 0.38V-vf 200mA-IFM 1mA-IF 0.2uA-IR SOT-363 3K/REEL 个人通讯/蜂窝时分多址/码分多址/的W - CDMA线性可变增益放大器
File Size	122.78K / 8 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	RF2504
OCR Text	...g load pulling and pushing. The IC offers great flexibility, yet is easy to use. This product was designed for use in applications with low ...HBT GaAs HBT SiGe HBT GaN HEMT Features * High-Isolation/Reduced Load Pulling * Low Current Co...
Description	IC,VOLTAGE-CONTROLLED OSCILLATOR,1-CHANNEL,700MHZ-1.5GHZ,BIPOLAR,SOP,8PIN,PLASTIC RF2504 VCO/High-Isolation Buffer Amplifier Preliminary From old datasheet system
File Size	95.36K / 8 Page	View it Online	Download Datasheet

				ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc] ANADIGICS Inc ANADIGICS, Inc.
Part No.	RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 PRFS-P2010-007 PRFS-P2010-008 PRFS-P2010-009 PRFS-P2010-EVL
OCR Text	...r is a highperformance GaAs HBT IC designed for use in transmit applications in the 2.4-2.5 GHz frequency band. With a P1dB of 25 dBm, the device is ideal as a final stage for wireless LAN applications requiring high transmit linearity. Des...
Description	The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... 2.4-2.5 GHz Power Amplifier From old datasheet system 2.4?2.5 GHz Power Amplifier Single-band power amplifiers 2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
File Size	74.38K / 4 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC
Part No.	SZA-2044
OCR Text	... is DC grounded internal to the IC. Do not apply voltage to this pin. RF output pin. This is also another connection to the 2nd stage collector. 2nd stage collector bias pin. Apply 3.0 to 5.0V to this pin. 1st stage collector bias pin. Appl...
Description	From old datasheet system 2.0-2.7 GHz 5V 1W Power Amplifier
File Size	241.88K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NESG3031M14NBSP NESG3031M14-T3 NESG3031M14
OCR Text	...YP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz * * * MAXIMUM ST...HBT TECHNOLOGY: USH3 process, fmax = 110 GHz M14 PACKAGE: 4-pin lead-less minimold package ORDERI...
Description	From old datasheet system NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
File Size	97.47K / 3 Page	View it Online	Download Datasheet

				RF Micro Devices, Inc. RFMD[RF Micro Devices]
Part No.	RF2127PCBA RF2127
OCR Text	...gh-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitter...
Description	MEDIUM POWER LINEAR AMPLIFIER
File Size	63.00K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BA01207
OCR Text	IC DESCRIPTION The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone. Outline Drawing unit : milimeter 1 8 7 6 4 4.5 5 1.5max. 1:Pin 2:Vc1 3:Vc2 4:GND 5:Pout 6:Vcb 7:Vref 8:GND FEATURES Low voltage Vc =3.5V High p...
Description	GaAs HBT HYBRID IC From old datasheet system
File Size	26.48K / 1 Page	View it Online	Download Datasheet

				RFMD[RF Micro Devices]
Part No.	RF2418 RF2418PCBA
OCR Text	...ted UHF receiver front-end. The IC contains all of the required components to implement the RF functions of the receiver except for the pass...HBT SiGe HBT u Package Style: SOIC-14 GaAs MESFET Si CMOS Features * Single 3V to 6.5V ...
Description	LOW CURRENT LNA/MIXER
File Size	113.48K / 10 Page	View it Online	Download Datasheet

For ic-hbt Found Datasheets File :: 736 Search Time::4.531ms
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