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  id-0.40a Datasheet PDF File

For id-0.40a Found Datasheets File :: 1313    Search Time::3.625ms    
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    IRFS150A

Fairchild Semiconductor
Part No. IRFS150A
OCR Text ... BVDSS = 100 V RDS(on) = 0.04 ID = 31 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (T...
Description TRANSISTOR|MOSFET|N-CHANNEL|100VV(BR)DSS|31AI(D)|TO-247VAR
Advanced Power MOSFET

File Size 258.02K  /  7 Page

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    hitachi
Part No. HN27C1024HG_HCCSERIES C1024HG
OCR Text ...lative to VSS . 2. Vin, Vout, V ID min = -1.0 V for pulse width 50 ns 4 HN27C1024HG/HCC Series Capacitance (Ta = 25C, f = 1 MHz) HN27C1024HG Series Parameter Input capacitance Output capacitance Symbol Cin Cout Min -- -- Typ -- --...
Description From old datasheet system

File Size 89.20K  /  18 Page

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    N.A.
Part No. SRV05-4
OCR Text ...AKAGE CURRENT (See Note 1) @VWM ID A 5 TYPICAL CAPACITANCE (See Note 1) VWM VOLTS SRV05-4 S5 5.0 @0V, 1 MHz Cj(SD) pF 3.5 Note 1: From I/O Pin to Ground. FIGURE 1 PEAK PULSE POWER VS PULSE TIME 10,000 IPP - Peak Pulse Current ...
Description STEERING DIODE / TVS ARRAY COMBO

File Size 169.92K  /  4 Page

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    FDP047AN08 FDH047AN08A0 FDI047AN08A0 FDP047 FDP047AN08A0

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. FDP047AN08 FDH047AN08A0 FDI047AN08A0 FDP047 FDP047AN08A0
OCR Text ...S(ON) = 4.0m (Typ.), VGS = 10V, ID = 80A * Qg(tot) = 92nC (Typ.), VGS = 10V * Low Miller Charge * Low QRR Body Diode * UIS Capability (Singl...0 -55 to 175 A A A mJ W W/oC o Ratings 75 20 Units V V C Thermal Characteristics RJC R...
Description N-Channel PowerTrench MOSFET 75V, 80A, 4.7m?/a>
75V N-Channel PowerTrench MOSFET
From old datasheet system
75V N-Channel PowerTrench? MOSFET
N-Channel PowerTrench MOSFET 75V, 80A, 4.7mз
N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m

File Size 544.34K  /  10 Page

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    IRF5210L IRF5210S

IRF[International Rectifier]
Part No. IRF5210L IRF5210S
OCR Text ... = -100V RDS(on) = 0.06 G ID = -40A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switc...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A)
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

File Size 182.97K  /  10 Page

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    IRF5210

IRF[International Rectifier]
Part No. IRF5210
OCR Text ... = -100V RDS(on) = 0.06 G ID = -40A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with t...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V Rds(on)=0.06ohm Id=-40A)
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A)

File Size 121.40K  /  8 Page

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    IXTH50N20 IXTM50N20

IXYS[IXYS Corporation]
Part No. IXTH50N20 IXTM50N20
OCR Text ...served l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % l VGS(th) VDS = VGS, ID = 250 A 2 4 V l VDSS VGS = 0 V, ID = 250 A 200 V l Characteristic Values (TJ = 25C, unless ...
Description MegaMOS FET
RES, 11K OHM, 1%, 1/10W, 100PPM CHIP, 0805
RES D, 0805, 113000.000 OHM, 1.00%, 1/10W

File Size 110.06K  /  4 Page

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    Electronic Theatre Controls, Inc.
ETC[ETC]
Part No. PUSB6B PUSB3B
OCR Text ...12.9V @ 37A 13.2V @ 35A @VWM ID A 125 10 @0V, 1 MHz Cj(SD) pF 15 15 Note 1: Electrical specifications refer to pins 1 to pin 4 or p...0.01 1 10 100 td - Pulse Duration - s 1,000 10,000 120 IPP - Peak Pulse Current - % ...
Description STEERING DIODE / TVS ARRAY COMBO

File Size 93.63K  /  4 Page

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    2SK2691-01R

Fuji Electric
Part No. 2SK2691-01R
OCR Text ...e Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 70 280 20 685 100 150 -55 ~ +150 * L=0,186mH, VCC=24V > Equivalent Circuit Unit V A A V mJ* W C C - Electrical Characteristics (TC=25C), unless otherwise...
Description N-channel MOS-FET

File Size 327.11K  /  3 Page

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    FQL40N50F

FAIRCHILD[Fairchild Semiconductor]
Part No. FQL40N50F
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...0.1 -Max 0.27 -30 Units C/W C/W C/W (c)2001 Fairchild Semiconductor Corporation Rev. A2, Septe...
Description 500V N-Channel MOSFET

File Size 634.51K  /  8 Page

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