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  igbt a Datasheet PDF File

For igbt a Found Datasheets File :: 11005    Search Time::2.703ms    
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    CM200DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM200DY-28H
OCR Text igbt MODULES CM200DY-28H HIGH POWER SWITCHING USE INSULaTED TYPE a B F F G P C2E1 E2 C1 G2 E2 C D G1 E1 J P K N - DIa. (4 TYP.) M M Q - M6 THD (3 TYP.) R TaB#110 t=0.5 L E H M Description: Mitsubish...
Description igbt Modules:1400V
HIGH POWER SWITCHING USE INSULaTED TYPE

File Size 49.59K  /  4 Page

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    CM300DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM300DY-28H
OCR Text igbt MODULES CM300DY-28H HIGH POWER SWITCHING USE INSULaTED TYPE a B M P - DIa. (4 TYP.) C2E1 E2 C1 E2 C2 R L D C F C1 E1 R G S - M6 THD. (3 TYP) N K K G H TaB #110, t = 0.5 Q N K E J N Des...
Description igbt Modules:1400V
HIGH POWER SWITCHING USE INSULaTED TYPE

File Size 49.35K  /  4 Page

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    CM50DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM50DY-28H
OCR Text igbt MODULES CM50DY-28H MEDIUM POWER SWITCHING USE INSULaTED TYPE a B C F F K E2 G2 Q - DIa. (2 TYP.) D M G1 E1 J C2E1 E2 C1 N (3 TYP.) R S - M5 THD (3 TYP.) R R TaB#110 t=0.5 H L H P E G ...
Description igbt Modules:1400V
MEDIUM POWER SWITCHING USE INSULaTED TYPE

File Size 48.00K  /  4 Page

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    CM75DY-28H

Mitsubishi Electric Sem...
Powerex Power Semiconductors
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. CM75DY-28H
OCR Text igbt MODULES CM75DY-28H HIGH POWER SWITCHING USE INSULaTED TYPE a B C F F K E2 G2 Q - DIa. (2 TYP.) D M G1 E1 J C2E1 E2 C1 N (3 TYP.) R S - M5 THD (3 TYP.) R R TaB#110 t=0.5 H L H P E G De...
Description HIGH POWER SWITCHING USE INSULaTED TYPE
igbt Modules:1400V

File Size 47.54K  /  4 Page

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    IR2137IGBT IR2137

IRF[International Rectifier]
Part No. IR2137igbt IR2137
OCR Text igbt Protection in aC or BLDC Motor Drives by Toshio Takahashi The new IR2137 igbt Gate Driver IC integrates Ground Fault and Over-Current Protection with Soft Shutdown, thus providing a compact and comprehensive igbt protection scheme....
Description igbt Protection in aC or BLDC Motor Drives

File Size 85.70K  /  9 Page

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    IXST35N120B IXSH35N120B

IXYS[IXYS Corporation]
Part No. IXST35N120B IXSH35N120B
OCR Text igbt IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOa Capability IC25 = 70 a VCES = 1200 V VCE(sat) = 3.6 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOa (RBSOa) tSC PC TJ TJM Tstg Md Test Conditions TJ = 25C to 150C TJ ...
Description igbt

File Size 81.21K  /  2 Page

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    MG800J2YS50A

Toshiba Semiconductor
Part No. MG800J2YS50a
OCR Text igbt Module Silicon N Channel igbt MG800J2YS50a High power switching applications Motor control applications * * * The electrodes are i...a a W C C V Nm Nm 1 2002-10-31 MG800J2YS50a Electrical Characteristics (Ta = 25C) Charact...
Description igbt Module Silicon N Channel igbt High Power Switching applications Motor Control applications
TOSHIBa igbt Module Silicon N Channel igbt

File Size 206.63K  /  7 Page

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    MSAGX75F60A

MICROSEMI[Microsemi Corporation]
Part No. MSaGX75F60a
OCR Text ...est: MSaGX75F60B high frequency igbt, low switching losses Maximum Ratings @ 25C (unless otherwise specified) DESCRIPTION Collector-to-...a VCE = VGE, IC = 250 a VGE = 20V DC, VCE = 0 VCE =0.8*BVCES VGE = 0 V VGE= 15V, I C= 50a I C= 50a ...
Description N-CHaNNEL INSULaTED GaTE BIPOLaR TRaNSISTOR

File Size 45.08K  /  2 Page

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    MSAGX75L60A

Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. MSaGX75L60a
OCR Text ...quest: MSaGX75L60B low VCE(sat) igbt, low conduction losses Maximum Ratings @ 25C (unless otherwise specified) DESCRIPTION Collector-to...a VCE = VGE, IC = 250 a VGE = 20V DC, VCE = 0 VCE =0.8*BVCES VGE = 0 V VGE= 15V, I C= 60a I C= 60a ...
Description LJT 8C 8#20 PIN WaLL RECP 75 a, 600 V, N-CHaNNEL igbt
N-CHaNNEL INSULaTED GaTE BIPOLaR TRaNSISTOR

File Size 47.77K  /  2 Page

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    MSAHX75L60C

MICROSEMI[Microsemi Corporation]
Part No. MSaHX75L60C
OCR Text ...quest: MSaHX75L60D low VCE(sat) igbt, low conduction losses Maximum Ratings @ 25C (unless otherwise specified) DESCRIPTION Collector-to...a VCE = VGE, IC = 250 a VGE = 20V DC, VCE = 0 VCE =0.8*BVCES VGE = 0 V VGE= 15V, I C= 60a I C= 60a ...
Description N-CHaNNEL INSULaTED GaTE BIPOLaR TRaNSISTOR

File Size 49.41K  /  2 Page

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For igbt a Found Datasheets File :: 11005    Search Time::2.703ms    
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