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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ...1 20s PULSE WIDTH T = 25 C j 1 10 100 10 0.1 20s PULSE WIDTH T = 200 C j 1 10 100 VDS , Drain-to-Source Voltage (V) VDS...b R )D S S tp 400 0 25 50 75 100 125 150 175 200 Starting Tj , junction Temperature ( C) ...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?<br>Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??<br>Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)<br>POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)<br>Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)<br>Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)<br>
File Size 100.05K  /  8 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1b902 IRF1902TR
OCR Text ...urrent ( ) 1.5 10.00 T j = 175C (Normalized) T j = 25C RDS(on) , Drain-to-Source On Resistance 1.0 0.5 1.00 2.0 2...b DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ER...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package<br>Power MOSFET(Vdss=20V)<br>
File Size 105.83K  /  9 Page

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    IRF2805L IRF2805S

IRF[International Rectifier]
Part No. IRF2805L IRF2805S
OCR Text ...acteristics 1000 3.0 T j = 25C I D = 175A A) 2.5 ID , Drain-to-Source Current T j = 175C RDS(on) , Drain-to-Source...b R )D SS tp 200 0 25 50 75 100 125 150 175 Starting Tj , junction Temperature ( C) IAS ...
Description 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package<br>55V Single N-Channel HEXFET Power MOSFET in a TO-262 package<br>AUTOMOTIVE MOSFET<br>
File Size 221.43K  /  11 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ....5V 20s PULSE WIDTH T = 25 C j 1 10 100 10 0.1 10 0.1 20s PULSE WIDTH T = 175 C j 1 10 100 VDS , Drain-to-Source Voltage ...b R )D SS tp 200 100 0 25 50 75 100 125 150 175 Starting Tj , junction Temperature ( C) ...
Description HEXFET Power MOSFET HEXFET功率MOSFET<br>75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package<br>75V Single N-Channel HEXFET Power MOSFET in a TO-262 package<br>
File Size 122.50K  /  10 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ... factor D = t 1 / t 2 2. Peak T j = P DM x Z thjC + TC 0.0001 0.001 0.01 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig...b R )D SS tp 200 100 0 25 50 75 100 125 150 175 Starting Tj , junction Temperature ( C) ...
Description Power MOSFET(Vdss=75V, Id=82A?)<br>Power MOSFET(Vdss=75V, Id=82A)<br>
File Size 149.88K  /  8 Page

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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text ...urrent ( A) 2.0 10.0 T j = 150C RDS(on) , Drain-to-Source On Resistance (Normalized) 1.5 1.0 T j = 25C 1.0 0.5...b. basic Gate Charge Test Circuit and Waveform 60 40 15V V(bR)DSS tp VDS L 20 DRI...
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package<br>SMPS MOSFET<br>
File Size 119.33K  /  8 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ... factor D = t 1 / t 2 2. Peak T j = P DM x Z thjC + TC 0.001 0.01 0.1 1 0.1 0.05 0.02 0.01 0.01 0.00001 0.0001 t1 , Rectangul...b R )D S S tp 200 0 25 50 75 100 125 150 175 Starting Tj , junction Temperature ( C) Fi...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)<br>Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)<br>
File Size 193.12K  /  10 Page

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ... factor D = t 1 / t 2 2. Peak T j = P DM x Z thjC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) ...b R )D SS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Ind...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)<br>
File Size 121.12K  /  8 Page

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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. IRF3415L IRF3415S
OCR Text ... factor D = t 1 / t 2 2. Peak T j = P DM x Z thjC + TC 0.0001 0.001 0.01 0.1 1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) ...b R )D SS tp Starting T j, junction Temperature ( o C) Fig 12c. Maximum Avalanche Energy Vs. D...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)<br>Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)<br>Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)<br>
File Size 152.65K  /  10 Page

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    IRF3415

IRF[International Rectifier]
Part No. IRF3415
OCR Text ... factor D = t 1 / t 2 2. Peak T j = P DM x Z thjC + TC 0.0001 0.001 0.01 0.1 1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) ...b R )D SS tp Starting Tj , junction Temperature (oC) Fig 12c. Maximum Avalanche Energy Vs. Dra...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)<br>Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)<br>Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)<br>
File Size 90.69K  /  8 Page

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