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Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
RFT3055 RFT3055LE HGTG20N120CND FN4537
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| OCR Text |
...BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] STARTING TJ = 25oC ID, DRAIN CURRENT (A)
20 VGS = 10V 16
VGS = 5V VGS = 4.5V
12
VGS = 4V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TA = 25oC VGS = 3V
1
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| Description |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
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| File Size |
95.41K /
10 Page |
 View
it Online |
Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
RFD16N06LESM RFD16N06LESM9A
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| OCR Text |
...BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms)
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 6. SATURATION CHARACTERISTICS
(c)20... |
| Description |
Discrete Commercial N-Channel Power MOSFET, 60V, 16A, 0.047 Ohms @ VGS = 4.5V, TO-252/DPAK Package
16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
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| File Size |
150.07K /
7 Page |
View
it Online |
Download Datasheet |
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