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  maximum air flow is increased Datasheet PDF File

For maximum air flow is increased Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

    572D 572D225X025Q2 572D686X010B2 572D227X004B2001 572D336X004P2001 572D106X010P2 572D106X025A2 572D107X0010B2 572D107X00

Vishay Siliconix
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Part No. 572D 572D225X025Q2 572D686X010B2 572D227X004B2001 572D336X004P2001 572D106X010P2 572D106X025A2 572D107X0010B2 572D107X0010T2 572D107X6R3A2 572D107X6R3B2 572D107X6R3Q2 572D107X6R3S2 572D107X6R3T2 572D336X06R3P2 572D08 572D475X025A2 572D337X004T2 572D227X0004S2 572D226X016A2 572D226X016B2 572D476X0010S2 572D475X-025S2- 572D476X-6R3Q2- 572D475X-025A2-
Description Solid Tantalum Chip Capacitors TANTAMOUNT㈢, Low Profile, Conformal Coated, maximum CV
Solid Tantalum Chip Capacitors TANTAMOUNT垄莽, Low Profile, Conformal Coated, maximum CV
Solid Tantalum Chip Capacitors TANTAMOUNT庐, Low Profile, Conformal Coated, maximum CV
Solid Tantalum Chip Capacitors TANTAMOUNT?, Low Profile, Conformal Coated, maximum CV

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    Cypress Semiconductor Corp.
Part No. CY7C1231H-133AXI CY7C1231H-133AXC
Description 2-Mbit (128K x 18) flow-Through SRAM with NoBLArchitecture
2-Mbit (128K x 18) flow-Through SRAM with NoBL??Architecture

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    CY7C1379B-117AC CY7C1379B-117BZC CY7C1379B

Cypress Semiconductor
Part No. CY7C1379B-117AC CY7C1379B-117BZC CY7C1379B
Description 9-Mbit (256K x 32) flow-through SRAM with NoBL(TM) Architecture
9-Mbit (256K x 32) flow-through SRAM with NoBL⑩ Architecture
9-Mbit (256K x 32) flow-through SRAM with NoBL垄芒 Architecture
9-Mbit (256K x 32) flow-through SRAM with NoBL Architecture

File Size 356.46K  /  15 Page

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    Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
Part No. 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2N6109 2N6111 2N6475 2N6106 2N6288 2N6289 2N6291 2N6292
Description EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSisTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM isOLATION: 20 dB; VSWR: 1.30 maximum; maximum INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSisTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSisTORS

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    GBL410 GBL408 GBL4005 GBL401 GBL402 GBL404 GBL406

LRC[Leshan Radio Company]
乐山无线电股份有限公
Part No. GBL410 GBL408 GBL4005 GBL401 GBL402 GBL404 GBL406
Description maximum Ratings & Thermal Characteristics Ratings at 25??ambient temperature unless otherwise specified.
maximum Ratings & Thermal Characteristics Ratings at 25 ambient temperature unless otherwise specified.
maximum Ratings & Thermal Characteristics Ratings at 25∩ ambient temperature unless otherwise specified.
maximum Ratings & Thermal Characteristics Ratings at 25ambient temperature unless otherwise specified.

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    Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C1383B-83BGC CY7C1383B-83BZC CY7C1383B-83AC CY7C1383B-83BZI CY7C1383B-83BGI CY7C1383B-83AI CY7C1383B-117AC
Description 512 36/1M 18 flow-Thru SRAM 1M X 18 STANDARD SRAM, 10 ns, PQFP100
512 36/1M 18 flow-Thru SRAM 1M X 18 STANDARD SRAM, 7.5 ns, PQFP100
512 36/1M 18 flow-Thru SRAM 1M X 18 STANDARD SRAM, 10 ns, PBGA119
512 36/1M 18 flow-Thru SRAM 1M X 18 STANDARD SRAM, 10 ns, PBGA165

File Size 607.96K  /  31 Page

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    Micron Technology, Inc.
Part No. MT55L256V18F1 MT55L256L18F1
Description 2.5V I/O56K x 18,flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18,流量通过ZBT SRAM的电压(3.3V输入/输出Mb的流通式同步静态存储器

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    Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC CY7C1355B-117BZI CY7C1357B-100BGC CY7C1357B-117BGI CY7C1357B-133AI CY7C1357B-133BGI CY7C1357B-117AI CY7C1357B-117AC CY7C1357B-100AC CY7C1357B-100BGI CY7C1355B-133AI CY7C1355B-133AC CY7C1355B-133BGI CY7C1355B-133BGC CY7C1357B-117BZC CY7C1357B-117BZI CY7C1355B-100BG CY7C1355B-100BZI CY7C1355B-133BZI CY7C1355B-117AC CYPRESSSEMICONDUCTORCORP-CY7C1357B-117AI
Description 9-Mb (256K x 36/512K x 18) flow-Through SRAM with NoBL Architecture 9 - MB的(256 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100

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    AS5SS256K18DQ-10/IT AS5SS256K18DQ-10/XT AS5SS256K18DQ-9/IT AS5SS256K18DQ-9/XT AS5SS256K18 AS5SS256K18DQ-10IT AS5SS256K18

Austin Semiconductor, Inc
Part No. AS5SS256K18DQ-10/IT AS5SS256K18DQ-10/XT AS5SS256K18DQ-9/IT AS5SS256K18DQ-9/XT AS5SS256K18 AS5SS256K18DQ-10IT AS5SS256K18DQ-9IT AS5SS256K18DQ-9XT
Description 256K x 18 SSRAM - synchronous burst SRAM, flow-thru
256K x 18 SSRAM Synchronous Burst SRAM, flow-Through
256K x 18 SSRAM Synchronous Burst SRAM. flow-Through 256 × 18的SSRAM同步突发静态存储器。流通过

File Size 217.10K  /  13 Page

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    1N5242BT 1N5241BT 1N5244BT 1N5239BT 1N5270B 1N5277B 1N5279B 1N5245BT 1N5248BT 1N5271B 1N5257B 1N5276B 1N5275B 1N5228B 1N

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FairCHILD[Fairchild Semiconductor]
Part No. 1N5242BT 1N5241BT 1N5244BT 1N5239BT 1N5270B 1N5277B 1N5279B 1N5245BT 1N5248BT 1N5271B 1N5257B 1N5276B 1N5275B 1N5228B 1N5256B 1N5267B 1N5253B 1N5232B 1N5265B 1N5231B 1N5229B 1N5221B 1N5225B 1N5240BT 1N5222B 1N5223B 1N5224B 1N5226B 1N5227B 1N5230B 1N5233B 1N5234B 1N5235BT 1N5236BT 1N5237BT 1N5238BT 1N5243BT 1N5246BT 1N5247BT 1N5249BT 1N5250BT 1N5251B 1N5252B 1N5254B 1N5255B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5264B 1N5266B 1N5268B 1N5269B 1N5272B 1N5273B 1N5274B 1N5278B
Description Absolute maximum Ratings 43 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Absolute maximum Ratings 16 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
Absolute maximum Ratings 13 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
Absolute maximum Ratings 2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Absolute maximum Ratings 3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Absolute maximum Ratings 110 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Absolute maximum Ratings 14 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
Zeners

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