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  MDD312-20N1 Datasheet PDF File

For MDD312-20N1 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

    IXFN20N120P

IXYS Corporation
Part No. IXFN20N120P
Description Polar Power MOSFET HiPerFET

File Size 103.59K  /  4 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. GT20N135SRA
Description IGBT, 1350 V, 40 A, Built-in Diodes, TO-247
Tech specs    

Official Product Page

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    IXFN420N10T

IXYS Corporation
Part No. IXFN420N10T
Description GigaMOS Trench HiperFET Power MOSFET

File Size 174.52K  /  6 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TRS20N120HB
Description SiC Schottky Barrier Diode (SBD), 1200 V, 20 A, 2 in 1, TO-247
Tech specs    

Official Product Page

    ITT, Corp.
Part No. PWR-82520N3-100 PWR-82520R1-120 PWR-82520R1-320 PWR-82520R10-120 PWR-82520R10-320 PWR-82520N10-120
Description Industrial Control IC 工业控制IC

File Size 248.14K  /  16 Page

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    ST Microelectronics
Part No. STP20N10LFI
Description OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

File Size 398.39K  /  10 Page

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    IHW20N120R3

Infineon Technologies AG
Part No. IHW20N120R3
Description Reverse conducting IGBT with monolithic body diode

File Size 791.24K  /  12 Page

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    Infineon Technologies A...
Part No. 1EDI20N12AF 1EDI20N12AF-15
Description Single Channel MOSFET and GaN HEMT Gate Driver IC

File Size 1,728.23K  /  22 Page

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    IHW20N120R2

Infineon Technologies AG
Part No. IHW20N120R2
Description Reverse Conducting IGBT with monolithic body diode

File Size 372.50K  /  12 Page

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    IHW20N135R3

Infineon Technologies AG
Part No. IHW20N135R3
Description high power thyristor diode

File Size 2,205.02K  /  15 Page

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    Inchange Semiconductor ...
Part No. IPB020N10N5
Description isc N-Channel MOSFET Transistor

File Size 310.95K  /  2 Page

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    Infineon Technologies A...
Part No. IHW20N120R3-15
Description Material Content Data Sheet

File Size 27.96K  /  1 Page

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