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  microwave-bipolar Datasheet PDF File

For microwave-bipolar Found Datasheets File :: 940    Search Time::3.5ms    
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    Sanyo
Part No. SMA4201 VOL76
OCR Text ...rview Sanyo's high-performance microwave silicon bipolar transistor and MMIC (monolithic microwave integrated circuits) products, which are based on Sanyo's unique silicon high-frequency device technology, have been well received in the ma...
Description Optical Pickup High-Frequency Superposition IC
From old datasheet system

File Size 18.13K  /  3 Page

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    HP[Agilent(Hewlett-Packard)]
Part No. MSA2111 MSA-2111-BLK MSA-2111-TR1
OCR Text ...cost silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a surface mount plastic SOT-143 package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF ...
Description Cascadable Silicon Bipolar MMIC Amplifier
STANDARD AND LOW POWER PROGRAMMABLE READ-ONLY MEMORIES

File Size 36.23K  /  4 Page

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    MSA-2111 MSA-2111-BLK MSA-2111-TR1

Avago Technologies, Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. MSA-2111 MSA-2111-BLK MSA-2111-TR1
OCR Text ...cost silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a surface mount plastic SOT-143 package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF ...
Description Cascadable Silicon Bipolar MMIC Amplifier 级联硅双极MMIC放大

File Size 43.03K  /  4 Page

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    AT-64020

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. AT-64020
OCR Text ...ons operating over VHF, UHF and microwave frequencies. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metallization in the fabrication of these device...
Description Up to 4 GHz Linear Power Silicon Bipolar Transistor

File Size 40.15K  /  4 Page

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    HMC414MS8G

HITTITE[Hittite Microwave Corporation]
Part No. HMC414MS8G
OCR Text MICROWAVE CORPORATION HMC414MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Features Gain: 20 dB Saturated Power: +30 dBm 32% ...Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier ...
Description GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz

File Size 353.20K  /  8 Page

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    MSA-1000 MSA-1000-GP4

Agilent(Hewlett-Packard)
Part No. MSA-1000 MSA-1000-GP4
OCR Text ...ower silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use in a push-pull configuration in a 25 system. The MSA-1000 can also be used as single-ended amplifier in a 50 system with slightly redu...
Description Cascadable Silicon Bipolar MMIC Amplifier

File Size 57.48K  /  4 Page

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    PH1214-110M

Vishay Intertechnology, Inc.
MACOM[Tyco Electronics]
Part No. PH1214-110M
OCR Text ...ures * * * * * * * NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigita...bipolar NPN power transistor intended for use in L-band 1.2 - 1.4 GHz pulsed radars such as air traf...
Description Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
Radar Pulsed Power Transistor - 110 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty 雷达脉冲功率晶体 110瓦特,1.20 - 1 .40千兆赫,150毫秒脉冲10%的

File Size 51.99K  /  2 Page

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    PH1214-12M

MACOM[Tyco Electronics]
Part No. PH1214-12M
OCR Text ...es * * * * * * * * NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigita...bipolar NPN power transistor intended for use in L-band 1.2 - 1.4 GHz pulsed radar's such as air tra...
Description Radar Pulsed Power Transistor - 12 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty
Radar Pulsed Power Transistor - 12 Watts,1.20-1.40 GHz, 150 mS Pulse, 10% Duty

File Size 60.85K  /  2 Page

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    PH1214-220M

MACOM[Tyco Electronics]
Part No. PH1214-220M
OCR Text ...es * * * * * * * * NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigita...bipolar NPN power transistor intended for use in L-band 1.2 - 1.4 GHz pulsed radars such as air traf...
Description Radar Pulsed Power Transistor - 220 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
Radar Pulsed Power Transistor - 220 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty

File Size 51.24K  /  2 Page

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For microwave-bipolar Found Datasheets File :: 940    Search Time::3.5ms    
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