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INTERSIL[Intersil Corporation]
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| Part No. |
FSL9110R1 FSL9110R FSL9110D FN4225 FSL9110R4 FSL9110D1 FSL9110D3 FSL9110R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
2.5 A, 100 V, 1.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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| File Size |
57.46K /
8 Page |
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it Online |
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Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
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| Part No. |
300210-12 300190-9
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| OCR Text |
... * Spacecraft instrumentation * naval weapons systems * Binary Coded Decimal Ladder Networks * Binary Ladders (A-D, D-A conversion, current and voltage summing) * Ratio and Ratio-matching Networks * Bridge Networks * Synchro Input and Summi... |
| Description |
Bulk Metal Foil Technology Molded Resistor Networks
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| File Size |
119.94K /
4 Page |
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it Online |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSF450R4 FSF450D FSF450D1 FSF450D3 FSF450R FSF450R1 FSF450R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 26... |
| Description |
9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 9 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
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| File Size |
44.48K /
8 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSJ055R4 FSJ055D FSJ055D1 FSJ055D3 FSJ055R FSJ055R1 FSJ055R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
70A/ 60V/ 0.012 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
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| File Size |
322.95K /
9 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R1 FSJ163R3 FSJ260R3 FSJ260R4 FSJ160R3 FSJ160R4
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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| File Size |
56.45K /
8 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSJ260R4 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ260R3 FSJ264D FSJ264D1 FSJ264D3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
33A/ 250V/ 0.080 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
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| File Size |
46.02K /
8 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSJ9055R4 FSJ9055D FSJ9055D1 FSJ9055D3 FSJ9055R FSJ9055R1 FSJ9055R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
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| File Size |
65.59K /
8 Page |
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it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSJ9260R4 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1 FSJ9260R3 FN4466
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 27 A, 200 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
27A/ -200V/ 0.130 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
From old datasheet system
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| File Size |
46.14K /
8 Page |
View
it Online |
Download Datasheet |
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