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Analog Devices, Inc.
Renesas Electronics Corporation
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| Part No. |
HAT2068R-EL-E HAT2068R-15
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| Description |
14 A, 30 V, 0.016 ohm, N-CHANNEL, Si, power, MOSFET 3.95 X 4.90 MM, plastic, FP-8DAV, SOP-8
silicon N Channel power MOS FET power Switching
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| File Size |
98.14K /
9 Page |
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CREE power
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
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Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
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| Part No. |
2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JANTX2N5038 JANTX2N5039 JANTXV2N5038
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| Description |
NPN high power silicon TRANSISTOR 20 A, 90 V, NPN, Si, power TRANSISTOR, TO-204AA
NPN high power silicon TRANSISTOR 2 A, 90 V, NPN, Si, power TRANSISTOR, TO-3
From old datasheet system
(JAN2N5038 / JAN2N5039) NPN high power silicon TRANSISTOR
NPN Transistor
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| File Size |
54.47K /
2 Page |
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USHA India LTD
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| Part No. |
2SD313
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| Description |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W.
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| File Size |
46.01K /
2 Page |
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Price and Availability
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