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    Atmel Corp.
http://
Atmel, Corp.
Part No. AT45DB011B AT45DB011B-XC AT45DB011B-SC AT45DB011B-SU AT45DB011B-XU AT45DB011B-XI AT45DB011B-SI AT45DB011B-CI AT45DB011B-CC
OCR Text ...t pin reset chip reset rdy/busy ready/busy cbga top view through package a b c 123 vcc wp reset gnd rdy/bsy si sck cs so tssop top view ty p e 1 1 2 3 4 5 6 7 14 13 12 11 10 9 8 rdy/busy reset wp vcc gnd sck so cs nc nc nc nc nc si soic 1 ...
Description 1-MEGABIT 2.7 VOLT ONLY DATA FLASH 1M X 1 FLASH 2.7V PROM, PDSO14

File Size 301.65K  /  32 Page

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    Atmel Corp.
Part No. AT49F1604 AT49F1604T
OCR Text ...by  data polling, toggle bit, ready/busy for end of program detection  reset input for device initialization  sector program unlock command  tsop, cbga and bga package options  top or bottom boot block configuration available descri...
Description 16-megabit 5-volt Only Flash Memory(16M5V闪速存储器)

File Size 195.41K  /  18 Page

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    MX29F1610 MX29F1610A MX29F1610A-10 MX29F1610A-12 MX29F1610A-90 29F1610 29F1610A 29F1610A-10 29F1610A-12 29F1610A-90

MCNIX[Macronix International]
Part No. MX29F1610 MX29F1610A MX29F1610A-10 MX29F1610A-12 MX29F1610A-90 29F1610 29F1610A 29F1610A-10 29F1610A-12 29F1610A-90
OCR Text ...Enable Input Write Enable Input ready/busy Output Sector Write Protect Input Word/Byte Selection Input Power Supply Ground Pin MX29F1610A P/N: PM0506 2 REV.1.7, JUN. 15, 2001 MX29F1610A BLOCK DIAGRAM WE CE1/CE2 OE WP PWD ...
Description 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

File Size 667.29K  /  39 Page

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    80C186XL 80C188XL 80C186XL12 80C188XL12 80C..6XL

Intel Corporation
Intel, Corp.
Intel Corp.
Part No. 80C186XL 80C188XL 80C186XL12 80C188XL12 80C..6XL
OCR Text ...PHERAL ARCHITECTURE Chip-Select ready Generation Logic DMA Unit Timer Counter Unit Interrupt Control Unit Enhanced Mode Operation Queue-Stat...busy pins have internal pullup devices which are active while RES is applied Excessive loading or gr...
Description 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS 16位高集成嵌入式处理器

File Size 574.43K  /  48 Page

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    ST93C46A ST93C46AB1013TR ST93C46AB1TR ST93C46AB3013TR ST93C46AB3TR ST93C46AB6013TR ST93C46AB6TR ST93C46AM1013TR ST93C46A

SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. ST93C46A ST93C46AB1013TR ST93C46AB1TR ST93C46AB3013TR ST93C46AB3TR ST93C46AB6013TR ST93C46AB6TR ST93C46AM1013TR ST93C46AM1TR ST93C46AM3013TR ST93C46AM3TR ST93C46AM6013TR ST93C46AM6TR ST93C46C ST93C46CB1013TR ST93C46CB1TR ST93C46CB3013TR ST93C46CB3TR ST93C46CB6013TR ST93C46CB6TR ST93C46CM1013TR ST93C46CM1TR ST93C46CM3013TR ST93C46CM3TR ST93C46CM6013TR ST93C46CM6TR ST93C46T ST93C46TB1013TR ST93C46TB1TR ST93C46TB3013TR ST93C46TB3TR ST93C46TB6013TR ST93C46TB6TR ST93C46TM1013TR ST93C46TM1TR ST93C46TM3013TR ST93C46TM3TR ST93C46TM6013TR ST93C46TM6TR ST93C47AB1013TR ST93C47AB1TR ST93C47AB3013TR ST93C47AB3TR ST93C47AB6013TR ST93C47AB6TR ST93C47AM1013TR ST93C47AM1TR ST93C47AM3013TR ST93C47AM3TR ST93C47AM6013TR ST93C47AM6TR ST93C47C ST93C47CB1013TR ST93C47CB1TR ST93C47CB3013TR ST93C47CB3TR ST93C47CB6013TR ST93C47CB6TR ST93C47CM1013TR ST93C47CM1TR ST93C47CM3013TR ST93C47CM3TR ST93C47CM6013TR ST93C47CM6TR ST93C47T ST93C47TB1013TR ST93C47TB1TR ST93C47TB3013TR ST93C47TB3TR ST93C47TB6013TR ST93C47TB6TR ST93C47TM1013TR ST93C47TM1TR ST93C47TM3013TR ST93C47TM3TR ST93C47TM6013TR ST93C47TM6TR ST93C46CM1 2442 ST93C46 -ST93C47AB3013TR -ST93C46CM1 -ST93C46CM1013TR
OCR Text ...OGRAMMING CYCLE with AUTO-ERASE ready/busy SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST93C46 version - 3V to 5.5V for ST93C47 version SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ENHANCED ESD/LATCH UP PER...
Description From old datasheet system
1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM
MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.4A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Package/Case:6-TSOP RoHS Compliant: Yes
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:-4.5A; On-Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-TSOP; Leaded Process Compatible:No
MOSFET, P TSOP-6MOSFET, P TSOP-6; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:12V; Case style:TSOP-6; Current, Id cont:4.5A; Current, Idm pulse:20A; Power, Pd:1.1W; Resistance, Rds on:0.04R; SMD:1; Charge, Qrr typ
Circular Connector; No. of Contacts:13; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:10-13
Circular Connector; No. of Contacts:13; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:10-13
1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 1628 × 8 MICROWIRE的串行EEPROM
1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 16128 × 8 MICROWIRE的串行EEPROM

File Size 109.99K  /  13 Page

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    Maxwell Technologies, Inc
Part No. 79C0408 79C0408RT2FH-15 79C0408RT2FK-15 79C0408RT2FI-15 79C0408RT2FE-15 79C0408RT1FE-15 79C0408RT1FE-20 79C0408RT1FH-15 79C0408RT1FH-20 79C0408RT4FK-20 79C0408RT4FK-12 79C0408RT4FH-15 79C0408RT4FI-20 79C0408RT4FI-15 79C0408RT4FI-12 79C0408RT4FH-20 79C0408RT4FH-12 79C0408RT4FE-20 79C0408RT4FE-12 79C0408RT4FE-15 79C0408RT2FK-20 79C0408RT2FE-20 79C0408RPFE-12 79C04085 C0408XPFI-15 C0408XPFK-12 79C0408RPFH15 79C0408RT4FH12 79C0408RT4FH15 79C0408RT1FE15 79C0408RT1FE20 79C0408RPFI12 79C0408RPFE15 79C0408RPFI15 79C0408RPFK12 79C0408RT2FK15 79C0408RT2FK12 79C0408RT4FE20 79C0408RT2FE20
OCR Text ...es available * Data Polling and ready/busy signal * Software data protection * Write protection by RES pin * High endurance - 10,000 erase/write (in Page Mode), - 10 year data retention * Page write mode: 1 to 128 byte page * Low power diss...
Description 4 Megabit (512k x 8-bit) EEPROM MCM 512K X 8 EEPROM 5V MODULE, 200 ns, DFP40
4 Megabit (512k x 8-bit) EEPROM MCM 512K X 8 EEPROM 5V MODULE, 120 ns, DFP40
4 Megabit EEPROM MCM
512K X 8 EEPROM 5V MODULE, 150 ns, DFP40
   4 Megabit EEPROM MCM

File Size 351.69K  /  19 Page

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    Samsung Electronic
Part No. K9S5608V0M
OCR Text ...eset command(FFh) is written at ready state, the device goes into busy for maximum 5us. Note : For more detailed features and specifications including FAQ, please refer to Samsung' Flash web site. s http://www.intl.samsungsemi.com/Memory...
Description 32M x 8Bit SmartMedia Card Data Sheet

File Size 348.83K  /  26 Page

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    Samsung Electronic
Part No. K9S2808V0B
OCR Text ...eset command(FFh) is written at ready state, the device goes into busy for maximum 5us. 4. Changed Nop Parameter Number of Partial Program Cycles in the Same Page Main Array Spare Array Nop Symbol Max. 2 cycles --> 1 cycle 3 cycles --> 2 cy...
Description 16M x 8Bit SmartMedia Card Data Sheet

File Size 348.08K  /  26 Page

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    CAV93C46VE-GT3

ON Semiconductor
Part No. CAV93C46VE-GT3
OCR Text ...he device, or when checking the ready/busy status during a write operation. the serial communication protocol follows the timing shown in figure 2. the ready/busy status can be determined after the start of internal write cycle by selectin...
Description Microwire Serial EEPROM

File Size 129.28K  /  10 Page

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    Samsung Electronic
Part No. K9S2808V0A
OCR Text ...eset command(FFh) is written at ready state, the device goes into busy for maximum 5us. Dec. 6th 2000 Note : For more detailed features and specifications including FAQ, please refer to Samsung' Flash web site. s http://www.intl.samsu...
Description 16M x 8Bit SmartMedia Card Data Sheet

File Size 348.18K  /  26 Page

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