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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1S096HCZ0F
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| OCR Text |
...ototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 930 Sensitivity wavelength (nm) 700 to 1 200 Response time (s) 20
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arseni... |
| Description |
Gap : 1mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter
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| File Size |
132.44K /
9 Page |
 View
it Online |
Download Datasheet
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1S097HCZ0F
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| OCR Text |
...ototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 930 Sensitivity wavelength (nm) 700 to 1 200 Response time (s) 20
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arseni... |
| Description |
Gap : 2mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter
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| File Size |
130.31K /
9 Page |
View
it Online |
Download Datasheet |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1S25J0000F
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| OCR Text |
...ototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 930 Sensitivity wavelength (nm) 700 to 1 200 Response time (s) 20
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arseni... |
| Description |
SMT, Gap : 1.6mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter
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| File Size |
174.06K /
11 Page |
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it Online |
Download Datasheet |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1S36J0000F
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| OCR Text |
...ototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 800 Sensitivity wavelength (nm) 700 to 1 200 Response time (s) 12
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arseni... |
| Description |
Phototransistor Output, Phototransistor Output, with Tilt Direction (3-direction) Detecting
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| File Size |
142.59K /
11 Page |
View
it Online |
Download Datasheet |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1S39J0000F
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| OCR Text |
...ototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 930 Sensitivity wavelength (nm) 700 to 1 200 Response time (s) 20
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arseni... |
| Description |
Gap : 1.5mm, Detector pitch : 1mm 2-phase Phototransistor Output, Compact Transmissive Photointerrupter
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| File Size |
148.77K /
11 Page |
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it Online |
Download Datasheet |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1S51VJ000F
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| OCR Text |
...ototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 800 Sensitivity wavelength (nm) 400 to 1 200 Response time (s) 3
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arsenid... |
| Description |
Gap : 3mm Slit : 0.5mm Phototransistor Output, Case package Transmissive Photointerrupter
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| File Size |
146.88K /
12 Page |
View
it Online |
Download Datasheet |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1S52VJ000F
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| OCR Text |
...ototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 800 Sensitivity wavelength (nm) 400 to 1 200 Response time (s) 3
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arsenid... |
| Description |
Photointerrupter
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| File Size |
144.96K /
12 Page |
View
it Online |
Download Datasheet |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1S53VJ000F
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| OCR Text |
...ototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 800 Sensitivity wavelength (nm) 400 to 1 200 Response time (s) 3
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arsenid... |
| Description |
Gap : 5mm, Slit : 0.5mm Phototransistor Output, Case package Transmissive Photointerrupter
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| File Size |
144.20K /
12 Page |
View
it Online |
Download Datasheet |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1S56TJ000F
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| OCR Text |
...ototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 800 Sensitivity wavelength (nm) 400 to 1 200 Response time (s) 3
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arsenid... |
| Description |
Gap : 2mm, Slit : 0.15mm Phototransistor Output, Case package Transmissive Photointerrupter
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| File Size |
146.18K /
12 Page |
View
it Online |
Download Datasheet |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1S58VJ000F
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| OCR Text |
...ototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 800 Sensitivity wavelength (nm) 400 to 1 200 Response time (s) 3
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arsenid... |
| Description |
Gap : 5mm, Slit : 0.5mm Phototransistor Output, Case package Transmissive Photointerrupter
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| File Size |
171.75K /
12 Page |
View
it Online |
Download Datasheet |
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